{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,1]],"date-time":"2026-10-01T04:49:22Z","timestamp":1790830162363,"version":"4.1.0"},"reference-count":26,"publisher":"MDPI AG","issue":"1","license":[{"start":{"date-parts":[[2021,12,24]],"date-time":"2021-12-24T00:00:00Z","timestamp":1640304000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"the foundation of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory","award":["No. 61428060102-1and No.61428060201"],"award-info":[{"award-number":["No. 61428060102-1and No.61428060201"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Materials"],"abstract":"<jats:p>The grain orientation of Sn-based solder joints on copper pillars under the combined action of electron wind force and temperature gradient greatly affects their electromigration damage. The copper pillars with Sn-1.8Ag lead-free solder on the top was subjected to a current density of 1.5 \u00d7 104 A\/cm2 at 125 \u00b0C to study the electromigration behaviors. The grain orientation was characterized by scanning electron microscopy (SEM) equipped with electron backscattered diffraction (EBSD) detector. Metal dissolution and voids formation in the cathode as well as massive intermetallic compounds(IMC) accumulation in the anode were observed after electromigration. Closer examination of solder joints revealed that the Sn grain whose c-axis perpendicular to electric current may have retarded Cu diffusion to anode and IMC accumulation. In addition, the newly formed Cu6Sn5 exhibited preferred orientation related to the electric current direction.<\/jats:p>","DOI":"10.3390\/ma15010108","type":"journal-article","created":{"date-parts":[[2021,12,24]],"date-time":"2021-12-24T08:38:46Z","timestamp":1640335126000},"page":"108","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":17,"title":["The Effect of Grain Orientation of \u03b2-Sn on Copper Pillar Solder Joints during Electromigration"],"prefix":"10.3390","volume":"15","author":[{"given":"Kexin","family":"Xu","sequence":"first","affiliation":[{"name":"Department of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen 518055, China"},{"name":"Department of Reliability Design Research, China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, Guangzhou 510610, China"},{"name":"Sauvage Laboratory for Smart Materials, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9894-5130","authenticated-orcid":false,"given":"Xing","family":"Fu","sequence":"additional","affiliation":[{"name":"School of Electronics and Information, South China University of Technology, Guangzhou 510640, China"},{"name":"Department of Reliability Design Research, China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, Guangzhou 510610, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xinjie","family":"Wang","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen 518055, China"},{"name":"Sauvage Laboratory for Smart Materials, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhiwei","family":"Fu","sequence":"additional","affiliation":[{"name":"Department of Reliability Design Research, China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, Guangzhou 510610, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaofeng","family":"Yang","sequence":"additional","affiliation":[{"name":"Department of Reliability Design Research, China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, Guangzhou 510610, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Si","family":"Chen","sequence":"additional","affiliation":[{"name":"Department of Reliability Design Research, China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, Guangzhou 510610, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yijun","family":"Shi","sequence":"additional","affiliation":[{"name":"Department of Reliability Design Research, China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, Guangzhou 510610, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yun","family":"Huang","sequence":"additional","affiliation":[{"name":"Department of Reliability Design Research, China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, Guangzhou 510610, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hongtao","family":"Chen","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen 518055, China"},{"name":"Sauvage Laboratory for Smart Materials, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2021,12,24]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Chaware, R., Nagarajan, K., and Ramalingam, S. (June, January 29). Assembly and Reliability Challenges in 3D Integration of 28 nm FPGA Die on a Large High Density 65 nm Passive Interposer. Proceedings of the 2012 IEEE 62nd Electronic Components and Technology Conference, San Diego, CA, USA.","DOI":"10.1109\/ECTC.2012.6248841"},{"key":"ref_2","doi-asserted-by":"crossref","unstructured":"Charbonnier, J., Assous, M., Bally, J.-P., Miyairi, K., Sunohara, M., Cuchet, R., and Hida, R. (2012, January 17\u201320). High density 3D silicon interposer technology development and electrical characterization for high end applications. Proceedings of the 2012 4th Electronic System-Integration Technology Conference, Amsterdam, The Netherlands.","DOI":"10.1109\/ESTC.2012.6542156"},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"394","DOI":"10.1016\/j.jallcom.2014.07.124","article-title":"Interfacial reactions of fine-pitch Cu\/Sn\u20133.5Ag pillar joints on Cu\/Zn and Cu\/Ni under bump metallurgies","volume":"616","author":"Kim","year":"2014","journal-title":"J. Alloys Compd."},{"key":"ref_4","doi-asserted-by":"crossref","unstructured":"Bao, A., Zhao, L., Sun, Y., Han, M., Yeap, G., Bezuk, S., and Lee, K. (2014, January 27\u201330). Challenges and opportunities of chip package interaction with fine pitch Cu pillar for 28 nm. Proceedings of the 2014 IEEE 64th Electronic Components and Technology Conference (ECTC), Orlando, FL, USA.","DOI":"10.1109\/ECTC.2014.6897265"},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"2","DOI":"10.1016\/j.microrel.2012.07.029","article-title":"Transition from flip chip solder joint to 3D IC microbump: Its effect on microstructure anisotropy","volume":"53","author":"Tu","year":"2013","journal-title":"Microelectron. Reliab."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"3888","DOI":"10.1007\/s11664-015-3925-z","article-title":"Evolution of the Intermetallic Compounds in Ni\/Sn-2.5Ag\/Ni Microbumps for Three-Dimensional Integrated Circuits","volume":"44","author":"Hsu","year":"2015","journal-title":"J. Electron. Mater."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"146","DOI":"10.1016\/j.actamat.2016.07.004","article-title":"Scaling effect of interfacial reaction on intermetallic compound formation in Sn\/Cu pillar down to 1 \u03bcm diameter","volume":"117","author":"Liu","year":"2016","journal-title":"Acta Mater."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"2290","DOI":"10.1016\/j.microrel.2011.05.003","article-title":"Influence of crystallographic orientation of Sn\u2013Ag\u2013Cu on electromigration in flip-chip joint","volume":"51","author":"Lee","year":"2011","journal-title":"Microelectron. Reliab."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"2425","DOI":"10.1007\/s11664-011-1760-4","article-title":"Solder Volume Effects on the Microstructure Evolution and Shear Fracture Behavior of Ball Grid Array Structure Sn-3.0Ag-0.5Cu Solder Interconnects","volume":"40","author":"Li","year":"2011","journal-title":"J. Electron. Mater."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"83708","DOI":"10.1063\/1.4867115","article-title":"Electromigration induced Kirkendall void growth in Sn-3.5Ag\/Cu solder joints","volume":"115","author":"Jung","year":"2014","journal-title":"J. Appl. Phys."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"98","DOI":"10.1016\/j.actamat.2015.08.037","article-title":"Role of diffusion anisotropy in \u03b2-Sn in microstructural evolution of Sn-3.0Ag-0.5Cu flip chip bumps undergoing electromigration","volume":"100","author":"Huang","year":"2015","journal-title":"Acta Mater."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"595","DOI":"10.1016\/j.msea.2007.01.145","article-title":"Effects of Ag content on fracture resistance of Sn\u2013Ag\u2013Cu lead-free solders under high-strain rate conditions","volume":"460","author":"Suh","year":"2007","journal-title":"Mater. Sci. Eng. A"},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"1050","DOI":"10.1007\/s11664-001-0129-5","article-title":"Alloying effects in near-eutectic Sn-Ag-Cu solder alloys for improved microstructural stability","volume":"30","author":"Anderson","year":"2001","journal-title":"J. Electron. Mater."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"259","DOI":"10.1016\/S0026-2714(02)00239-1","article-title":"Effects of fourth alloying additive on microstructures and tensile properties of Sn\u2013Ag\u2013Cu alloy and joints with Cu","volume":"43","author":"Kim","year":"2003","journal-title":"Microelectron. Reliab."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"3880","DOI":"10.1007\/s11664-015-3922-2","article-title":"Microstructure and Grain Orientation Evolution in Sn-3.0Ag-0.5Cu Solder Interconnects Under Electrical Current Stressing","volume":"44","author":"Chen","year":"2015","journal-title":"J. Electron. Mater."},{"key":"ref_16","doi-asserted-by":"crossref","unstructured":"Fu, X., Liu, M., Xu, K., Chen, S., Shi, Y., Fu, Z., and Yao, R. (2020). The In-Situ Observation of Grain Rotation and Microstructure Evolution Induced by Electromigration in Sn-3.0Ag-0.5Cu Solder Joints. Materials, 13.","DOI":"10.3390\/ma13235497"},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"211909","DOI":"10.1063\/1.2936996","article-title":"Effect of Sn grain orientation on electromigration degradation mechanism in high Sn-based Pb-free solders","volume":"92","author":"Lu","year":"2008","journal-title":"Appl. Phys. Lett."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"6","DOI":"10.1016\/j.scriptamat.2016.09.028","article-title":"Effect of Sn grain orientation on formation of Cu6Sn5 intermetallic compounds during electromigration","volume":"128","author":"Shen","year":"2017","journal-title":"Scr. Mater."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"370","DOI":"10.1016\/j.jallcom.2016.04.024","article-title":"Dominant effect of high anisotropy in \u03b2-Sn grain on electromigration-induced failure mechanism in Sn-3.0Ag-0.5Cu interconnect","volume":"678","author":"Huang","year":"2016","journal-title":"J. Alloys Compd."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"6230","DOI":"10.1007\/s10853-017-1969-6","article-title":"Nucleation and electromigration-induced grain rotation in an SABI333 solder joint","volume":"53","author":"Han","year":"2018","journal-title":"J. Mater. Sci."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"3408","DOI":"10.1063\/1.1710127","article-title":"Interstitial Diffusion of Copper in Tin","volume":"38","author":"Dyson","year":"1967","journal-title":"J. Appl. Phys."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"347","DOI":"10.1016\/0001-6160(73)90190-9","article-title":"Interdiffusion and Reaction in Bimetallic Cu-Sn Thin Films","volume":"21","author":"Tu","year":"1973","journal-title":"Acta Metall."},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"1469","DOI":"10.1103\/PhysRevLett.53.1469","article-title":"Extreme Fast-Diffusion System: Nickel in Single-Crystal Tin","volume":"53","author":"Yeh","year":"1984","journal-title":"Phys. Rev. Lett."},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"203","DOI":"10.1016\/j.jallcom.2018.04.041","article-title":"Effect of electric current on grain orientation and mechanical properties of Cu-Sn intermetallic compounds joints","volume":"753","author":"Feng","year":"2018","journal-title":"J. Alloys Compd."},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"1564","DOI":"10.1557\/JMR.1992.1564","article-title":"An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments","volume":"7","author":"Oliver","year":"1992","journal-title":"J. Mater. Res."},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"4291","DOI":"10.1016\/j.actamat.2004.05.046","article-title":"Deformation behavior of (Cu, Ag)\u2013Sn intermetallics by nanoindentation","volume":"52","author":"Deng","year":"2004","journal-title":"Acta Mater."}],"container-title":["Materials"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1996-1944\/15\/1\/108\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T07:52:40Z","timestamp":1760169160000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1996-1944\/15\/1\/108"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,12,24]]},"references-count":26,"journal-issue":{"issue":"1","published-online":{"date-parts":[[2022,1]]}},"alternative-id":["ma15010108"],"URL":"https:\/\/doi.org\/10.3390\/ma15010108","relation":{},"ISSN":["1996-1944"],"issn-type":[{"value":"1996-1944","type":"electronic"}],"subject":[],"published":{"date-parts":[[2021,12,24]]}}}