{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,14]],"date-time":"2026-04-14T03:11:30Z","timestamp":1776136290296,"version":"3.50.1"},"reference-count":40,"publisher":"MDPI AG","issue":"18","license":[{"start":{"date-parts":[[2022,9,14]],"date-time":"2022-09-14T00:00:00Z","timestamp":1663113600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"National Key R&amp;D Program of China","award":["2018YFB0407602"],"award-info":[{"award-number":["2018YFB0407602"]}]},{"name":"National Key R&amp;D Program of China","award":["61627813"],"award-info":[{"award-number":["61627813"]}]},{"name":"National Key R&amp;D Program of China","award":["202003a05020050"],"award-info":[{"award-number":["202003a05020050"]}]},{"name":"National Key R&amp;D Program of China","award":["22YF1456400"],"award-info":[{"award-number":["22YF1456400"]}]},{"name":"National Natural Science Foundation of China","award":["2018YFB0407602"],"award-info":[{"award-number":["2018YFB0407602"]}]},{"name":"National Natural Science Foundation of China","award":["61627813"],"award-info":[{"award-number":["61627813"]}]},{"name":"National Natural Science Foundation of China","award":["202003a05020050"],"award-info":[{"award-number":["202003a05020050"]}]},{"name":"National Natural Science Foundation of China","award":["22YF1456400"],"award-info":[{"award-number":["22YF1456400"]}]},{"name":"Science and Technology Major Project of Anhui Province","award":["2018YFB0407602"],"award-info":[{"award-number":["2018YFB0407602"]}]},{"name":"Science and Technology Major Project of Anhui Province","award":["61627813"],"award-info":[{"award-number":["61627813"]}]},{"name":"Science and Technology Major Project of Anhui Province","award":["202003a05020050"],"award-info":[{"award-number":["202003a05020050"]}]},{"name":"Science and Technology Major Project of Anhui Province","award":["22YF1456400"],"award-info":[{"award-number":["22YF1456400"]}]},{"name":"Shanghai Sailing Program of chinan","award":["2018YFB0407602"],"award-info":[{"award-number":["2018YFB0407602"]}]},{"name":"Shanghai Sailing Program of chinan","award":["61627813"],"award-info":[{"award-number":["61627813"]}]},{"name":"Shanghai Sailing Program of chinan","award":["202003a05020050"],"award-info":[{"award-number":["202003a05020050"]}]},{"name":"Shanghai Sailing Program of chinan","award":["22YF1456400"],"award-info":[{"award-number":["22YF1456400"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Materials"],"abstract":"<jats:p>Electric-field control of spin dynamics is significant for spintronic device applications. Thus far, effectively electric-field control of magnetic order, magnetic damping factor and spin\u2013orbit torque (SOT) has been studied in magnetic materials, but the electric field control of spin relaxation still remains unexplored. Here, we use ionic liquid gating to control spin-related property in the ultra-thin (4 nm) heavy metal (HM) platinum (Pt) and ferromagnetic insulator (FMI) yttrium iron garnet (Y3Fe5O12, YIG) heterostructure. It is found that the anomalous Hall effect (AHE), spin relaxation time and spin diffusion length can be effectively controlled by the electric field. The anomalous Hall resistance is almost twice as large as at 0 voltage after applying a small voltage of 5.5 V. The spin relaxation time can vary by more than 50 percent with the electric field, from 41.6 to 64.5 fs. In addition, spin relaxation time at different gate voltage follows the reciprocal law of the electron momentum scattering time, which indicates that the D\u2019yakonov\u2013Perel\u2019 mechanism is dominant in the Pt\/YIG system. Furthermore, the spin diffusion length can be effectively controlled by an ionic gate, which can be well explained by voltage-modulated interfacial spin scattering. These results help us to improve the interface spin transport properties in magnetic materials, with great contributions to the exploration of new physical mechanisms and spintronics device.<\/jats:p>","DOI":"10.3390\/ma15186368","type":"journal-article","created":{"date-parts":[[2022,9,14]],"date-time":"2022-09-14T23:16:36Z","timestamp":1663197396000},"page":"6368","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Electric-Field Control of Spin Diffusion Length and Electric-Assisted D\u2019yakonov\u2013Perel\u2019 Mechanism in Ultrathin Heavy Metal and Ferromagnetic Insulator Heterostructure"],"prefix":"10.3390","volume":"15","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-2882-1065","authenticated-orcid":false,"given":"Shijie","family":"Xu","sequence":"first","affiliation":[{"name":"Fert Beijing Institute, Ministry of Industry and Information Technology Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China"},{"name":"Department of Electrical and Computer Engineering, University of California, Los Angeles, CA 90095, USA"},{"name":"Shanghai Key Laboratory of Special Artificial Microstructure, Pohl Institute of Solid State Physics, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China"},{"name":"Hefei Innovation Research Institute, Anhui High Reliability Chips Engineering Laboratory, Beihang University, Hefei 230013, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bingqian","family":"Dai","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, University of California, Los Angeles, CA 90095, USA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0715-2125","authenticated-orcid":false,"given":"Houyi","family":"Cheng","sequence":"additional","affiliation":[{"name":"Fert Beijing Institute, Ministry of Industry and Information Technology Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China"},{"name":"Hefei Innovation Research Institute, Anhui High Reliability Chips Engineering Laboratory, Beihang University, Hefei 230013, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Lixuan","family":"Tai","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, University of California, Los Angeles, CA 90095, USA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3814-4451","authenticated-orcid":false,"given":"Lili","family":"Lang","sequence":"additional","affiliation":[{"name":"Shanghai Key Laboratory of Special Artificial Microstructure, Pohl Institute of Solid State Physics, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yadong","family":"Sun","sequence":"additional","affiliation":[{"name":"Shanghai Key Laboratory of Special Artificial Microstructure, Pohl Institute of Solid State Physics, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhong","family":"Shi","sequence":"additional","affiliation":[{"name":"Shanghai Key Laboratory of Special Artificial Microstructure, Pohl Institute of Solid State Physics, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kang L.","family":"Wang","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, University of California, Los Angeles, CA 90095, USA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Weisheng","family":"Zhao","sequence":"additional","affiliation":[{"name":"Fert Beijing Institute, Ministry of Industry and Information Technology Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China"},{"name":"Hefei Innovation Research Institute, Anhui High Reliability Chips Engineering Laboratory, Beihang University, Hefei 230013, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2022,9,14]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"458","DOI":"10.1038\/d41586-020-01099-w","article-title":"Electric control of a spin current has potential for low-power 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