{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,6]],"date-time":"2026-04-06T07:32:48Z","timestamp":1775460768636,"version":"3.50.1"},"reference-count":49,"publisher":"MDPI AG","issue":"2","license":[{"start":{"date-parts":[[2023,1,13]],"date-time":"2023-01-13T00:00:00Z","timestamp":1673568000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Materials"],"abstract":"<jats:p>The impact of bismuth incorporation into the epitaxial layer of a (Ga,Mn)As dilute ferromagnetic semiconductor on its magnetic and electromagnetic properties is studied in very thin layers of quaternary (Ga,Mn)(Bi,As) compound grown on a GaAs substrate under a compressive misfit strain. An addition of a small atomic fraction of 1% Bi atoms, substituting As atoms in the layer, predominantly enhances the spin\u2013orbit coupling strength in its valence band. The presence of bismuth results in a small decrease in the ferromagnetic Curie temperature and a distinct increase in the coercive fields. On the other hand, the Bi incorporation into the layer strongly enhances the magnitude of negative magnetoresistance without affecting the hole concentration in the layer. The negative magnetoresistance is interpreted in terms of the suppression of weak localization in a magnetic field. Application of the weak-localization theory for two-dimensional ferromagnets by Dugaev et al. to the experimental magnetoresistance results indicates that the decrease in spin\u2013orbit scattering length accounts for the enhanced magnetoresistance in (Ga,Mn)(Bi,As).<\/jats:p>","DOI":"10.3390\/ma16020788","type":"journal-article","created":{"date-parts":[[2023,1,13]],"date-time":"2023-01-13T02:57:33Z","timestamp":1673578653000},"page":"788","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":8,"title":["Impact of Bismuth Incorporation into (Ga,Mn)As Dilute Ferromagnetic Semiconductor on Its Magnetic Properties and Magnetoresistance"],"prefix":"10.3390","volume":"16","author":[{"given":"Tomasz","family":"Andrearczyk","sequence":"first","affiliation":[{"name":"Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32\/46, PL-02668 Warsaw, Poland"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Khrystyna","family":"Levchenko","sequence":"additional","affiliation":[{"name":"Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32\/46, PL-02668 Warsaw, Poland"},{"name":"Faculty of Physics, University of Vienna, 1090 Vienna, Austria"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9495-2648","authenticated-orcid":false,"given":"Janusz","family":"Sadowski","sequence":"additional","affiliation":[{"name":"Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32\/46, PL-02668 Warsaw, Poland"},{"name":"Department of Physics and Electrical Engineering, Linnaeus University, SE-391 82 Kalmar, Sweden"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3722-764X","authenticated-orcid":false,"given":"Katarzyna","family":"Gas","sequence":"additional","affiliation":[{"name":"Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32\/46, PL-02668 Warsaw, Poland"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2644-2136","authenticated-orcid":false,"given":"Andrei","family":"Avdonin","sequence":"additional","affiliation":[{"name":"Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32\/46, PL-02668 Warsaw, Poland"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jerzy","family":"Wr\u00f3bel","sequence":"additional","affiliation":[{"name":"Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32\/46, PL-02668 Warsaw, Poland"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Tadeusz","family":"Figielski","sequence":"additional","affiliation":[{"name":"Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32\/46, PL-02668 Warsaw, Poland"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5740-3677","authenticated-orcid":false,"given":"Maciej","family":"Sawicki","sequence":"additional","affiliation":[{"name":"Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32\/46, PL-02668 Warsaw, Poland"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5087-0619","authenticated-orcid":false,"given":"Tadeusz","family":"Wosinski","sequence":"additional","affiliation":[{"name":"Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32\/46, PL-02668 Warsaw, Poland"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2023,1,13]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"195","DOI":"10.1038\/nmat1325","article-title":"Ferromagnetic semiconductors: Moving beyond (Ga,Mn)As","volume":"4","author":"MacDonald","year":"2005","journal-title":"Nat. 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