{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,19]],"date-time":"2026-09-19T16:37:33Z","timestamp":1789835853183,"version":"4.0.1"},"reference-count":104,"publisher":"MDPI AG","issue":"13","license":[{"start":{"date-parts":[[2023,6,26]],"date-time":"2023-06-26T00:00:00Z","timestamp":1687737600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62104243"],"award-info":[{"award-number":["62104243"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62274172"],"award-info":[{"award-number":["62274172"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["2022A1515011485"],"award-info":[{"award-number":["2022A1515011485"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["2022B1515120037"],"award-info":[{"award-number":["2022B1515120037"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Guangdong Basic and Applied Basic Research Foundation","award":["62104243"],"award-info":[{"award-number":["62104243"]}]},{"name":"Guangdong Basic and Applied Basic Research Foundation","award":["62274172"],"award-info":[{"award-number":["62274172"]}]},{"name":"Guangdong Basic and Applied Basic Research Foundation","award":["2022A1515011485"],"award-info":[{"award-number":["2022A1515011485"]}]},{"name":"Guangdong Basic and Applied Basic Research Foundation","award":["2022B1515120037"],"award-info":[{"award-number":["2022B1515120037"]}]},{"name":"Shenzhen Postdoctoral Funding","award":["62104243"],"award-info":[{"award-number":["62104243"]}]},{"name":"Shenzhen Postdoctoral Funding","award":["62274172"],"award-info":[{"award-number":["62274172"]}]},{"name":"Shenzhen Postdoctoral Funding","award":["2022A1515011485"],"award-info":[{"award-number":["2022A1515011485"]}]},{"name":"Shenzhen Postdoctoral Funding","award":["2022B1515120037"],"award-info":[{"award-number":["2022B1515120037"]}]},{"name":"SIAT Innovation Program for Excellent Young Researchers","award":["62104243"],"award-info":[{"award-number":["62104243"]}]},{"name":"SIAT Innovation Program for Excellent Young Researchers","award":["62274172"],"award-info":[{"award-number":["62274172"]}]},{"name":"SIAT Innovation Program for Excellent Young Researchers","award":["2022A1515011485"],"award-info":[{"award-number":["2022A1515011485"]}]},{"name":"SIAT Innovation Program for Excellent Young Researchers","award":["2022B1515120037"],"award-info":[{"award-number":["2022B1515120037"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Materials"],"abstract":"<jats:p>Copper is the most common interconnecting material in the field of microelectronic packaging, which is widely used in advanced electronic packaging technologies. However, with the trend of the miniaturization of electronic devices, the dimensions of interconnectors have decreased from hundreds of microns to tens of or even several microns, which has brought serious reliability issues. As a result, nanotwinned copper (nt-Cu) has been proposed as a potential candidate material and is being certified progressively. Firstly, the physical properties of nt-Cu have been widely studied. Notably, the higher thermal stability and oxidation resistance of the (111) texture causes nt-Cu to maintain excellent physical properties under high-temperature serving conditions. Secondly, recent works on the electrolyte and electroplating processes of nt-Cu on wafer substrates are summarized, focusing on how to reduce the thickness of the transition layer, improve the twin density, and achieve complicated pattern filling. Thirdly, nt-Cu can effectively eliminate Kirkendall voids when it serves as UBM or a CuP. Additionally, the high (111) texture can control the preferred orientation of interfacial intermetallic compounds (IMCs) at the Cu\u2013Sn interface, which should be helpful to improve the reliability of solder joints. nt-Cu has superior electromigration resistance and antithermal cycling ability compared to ordinary copper RDLs and TSVs. Above all, nt-Cu has attracted much attention in the field of microelectronic packaging in recent years. The preparation\u2013performance\u2013reliability interrelationship of nt-Cu is summarized and displayed in this paper, which provides a solid theoretical basis for its practical applications.<\/jats:p>","DOI":"10.3390\/ma16134614","type":"journal-article","created":{"date-parts":[[2023,6,27]],"date-time":"2023-06-27T02:11:22Z","timestamp":1687831882000},"page":"4614","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":44,"title":["Research Progress of Electroplated Nanotwinned Copper in Microelectronic Packaging"],"prefix":"10.3390","volume":"16","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-7259-1503","authenticated-orcid":false,"given":"Ke-Xin","family":"Chen","sequence":"first","affiliation":[{"name":"Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China"},{"name":"School of Material Science and Engineering, University of Science and Technology of China, Shenyang 110016, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6018-8901","authenticated-orcid":false,"given":"Li-Yin","family":"Gao","sequence":"additional","affiliation":[{"name":"Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China"},{"name":"Shenzhen College of Advanced Technology, University of Chinese Academy of Sciences, Shenzhen 518055, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhe","family":"Li","sequence":"additional","affiliation":[{"name":"Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Rong","family":"Sun","sequence":"additional","affiliation":[{"name":"Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China"},{"name":"Shenzhen College of Advanced Technology, University of Chinese Academy of Sciences, Shenzhen 518055, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7097-8977","authenticated-orcid":false,"given":"Zhi-Quan","family":"Liu","sequence":"additional","affiliation":[{"name":"Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China"},{"name":"Shenzhen College of Advanced Technology, University of Chinese Academy of Sciences, Shenzhen 518055, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2023,6,26]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Zheng, Z., Huang, Y.-T., Wang, Z., Zhang, M., Wang, W.-T., Chung, C.-C., Cherng, S.-J., Tsai, Y.-H., Li, P.-C., and Lu, Z. 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