{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,29]],"date-time":"2026-05-29T15:28:06Z","timestamp":1780068486373,"version":"3.54.0"},"reference-count":102,"publisher":"MDPI AG","issue":"24","license":[{"start":{"date-parts":[[2024,12,11]],"date-time":"2024-12-11T00:00:00Z","timestamp":1733875200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Materials"],"abstract":"<jats:p>Nowadays, polycrystalline lead telluride is one of the premier substances for thermoelectric devices while remaining a hopeful competitor to current semiconductor materials used in mid-infrared photonic applications. Notwithstanding that, the development of reliable and reproducible routes for the synthesis of PbTe thin films has not yet been accomplished. As an effort toward this aim, the present article reports progress in the growth of polycrystalline indium-doped PbTe films and their study. The introduction foregoing the main text presents an overview of studies in these and closely related research fields for seven decades. The main text reports on the electron-beam-assisted physical vapor deposition of n-type indium-doped PbTe films on two different amorphous substrates. This doping of PbTe is unique since it sets electron density uniform over grains due to pinning the Fermi level. In-house optimized parameters of the deposition process are presented. The films are structurally characterized by a set of techniques. The transport properties of the films are measured with the original setups described in detail. The infrared transmission spectra are measured and simulated with the original optical-multilayer modeling tool described in the appendix. Conclusions of films\u2019 quality in terms of these properties altogether are drawn.<\/jats:p>","DOI":"10.3390\/ma17246058","type":"journal-article","created":{"date-parts":[[2024,12,11]],"date-time":"2024-12-11T06:44:05Z","timestamp":1733899445000},"page":"6058","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Polycrystalline Films of Indium-Doped PbTe on Amorphous Substrates: Investigation of the Material Based on Study of Its Structural, Transport, and Optical Properties"],"prefix":"10.3390","volume":"17","author":[{"given":"J\u00fcrgen","family":"Jopp","sequence":"first","affiliation":[{"name":"Ilse Katz Institute for Nanoscale Science & Technology, Ben Gurion University of the Negev, Beer Sheba 8410501, Israel"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1529-4481","authenticated-orcid":false,"given":"Vadim","family":"Kovalyuk","sequence":"additional","affiliation":[{"name":"Department of Physics, Moscow State Pedagogical University, 119992 Moscow, Russia"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7149-2060","authenticated-orcid":false,"given":"Elias","family":"Towe","sequence":"additional","affiliation":[{"name":"Departments of Electrical and Computer Engineering, and Materials Science and Engineering, Carnegie Mellon University, Hamerschlag Hall, 5000 Forbes Ave, Pittsburgh, PA 15213, USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5802-1352","authenticated-orcid":false,"given":"Roni","family":"Shneck","sequence":"additional","affiliation":[{"name":"Department of Materials Engineering, Ben Gurion University of the Negev, Beer Sheba 8410501, Israel"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9268-4873","authenticated-orcid":false,"given":"Zinovi","family":"Dashevsky","sequence":"additional","affiliation":[{"name":"Department of Materials Engineering, Ben Gurion University of the Negev, Beer Sheba 8410501, Israel"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6818-8850","authenticated-orcid":false,"given":"Mark","family":"Auslender","sequence":"additional","affiliation":[{"name":"School of Electrical and Computer Engineering, Ben Gurion University of the Negev, Beer Sheba 8410501, Israel"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2024,12,11]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"321","DOI":"10.1080\/00018735300101242","article-title":"Infra-red photo-conductors","volume":"2","author":"Smith","year":"1953","journal-title":"Adv. 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