{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,16]],"date-time":"2026-10-16T06:38:26Z","timestamp":1792132706166,"version":"4.4.0"},"reference-count":154,"publisher":"MDPI AG","issue":"15","license":[{"start":{"date-parts":[[2025,8,4]],"date-time":"2025-08-04T00:00:00Z","timestamp":1754265600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"National Natural Science Foundation of China","award":["62304005"],"award-info":[{"award-number":["62304005"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Materials"],"abstract":"<jats:p>Diamond, renowned for its exceptional electrical, physical, and chemical properties, including ultra-wide bandgap, superior hardness, high thermal conductivity, and unparalleled stability, serves as an ideal candidate for next-generation high-power and high-temperature electronic devices. Among diamond-based devices, Schottky barrier diodes (SBDs) have garnered significant attention due to their simple architecture and superior rectifying characteristics. This review systematically summarizes recent advances in diamond SBDs, focusing on both metal\u2013semiconductor (MS) and metal\u2013interlayer\u2013semiconductor (MIS) configurations. For MS structures, we critically analyze the roles of single-layer metals (including noble metals, transition metals, and other metals) and multilayer metals in modulating Schottky barrier height (SBH) and enhancing thermal stability. However, the presence of interface-related issues such as high densities of surface states and Fermi level pinning often leads to poor control of the SBH, limiting device performance and reliability. To address these challenges and achieve high-quality metal\/diamond interfaces, researchers have proposed various interface engineering strategies. In particular, the introduction of interfacial layers in MIS structures has emerged as a promising approach. For MIS architectures, functional interlayers\u2014including high-k materials (Al2O3, HfO2, SnO2) and low-work-function materials (LaB6, CeB6)\u2014are evaluated for their efficacy in interface passivation, barrier modulation, and electric field control. Terminal engineering strategies, such as field-plate designs and surface termination treatments, are also highlighted for their role in improving breakdown voltage. Furthermore, we emphasize the limitations in current parameter extraction from current\u2013voltage (I\u2013V) properties and call for a unified new method to accurately determine SBH. This comprehensive analysis provides critical insights into interface engineering strategies and evaluation protocols for high-performance diamond SBDs, paving the way for their reliable deployment in extreme conditions.<\/jats:p>","DOI":"10.3390\/ma18153657","type":"journal-article","created":{"date-parts":[[2025,8,4]],"date-time":"2025-08-04T15:30:06Z","timestamp":1754321406000},"page":"3657","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":7,"title":["Advances in Interfacial Engineering and Structural Optimization for Diamond Schottky Barrier Diodes"],"prefix":"10.3390","volume":"18","author":[{"given":"Shihao","family":"Lu","sequence":"first","affiliation":[{"name":"School of Integrated Circuits, North China University of Technology, Beijing 100144, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xufang","family":"Zhang","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, North China University of Technology, Beijing 100144, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shichao","family":"Wang","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, North China University of Technology, Beijing 100144, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Mingkun","family":"Li","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, North China University of Technology, Beijing 100144, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shuopei","family":"Jiao","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, North China University of Technology, Beijing 100144, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yuesong","family":"Liang","sequence":"additional","affiliation":[{"name":"Key Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi\u2019an Jiaotong University, Xi\u2019an 710049, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8016-7502","authenticated-orcid":false,"given":"Wei","family":"Wang","sequence":"additional","affiliation":[{"name":"Key Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi\u2019an Jiaotong University, Xi\u2019an 710049, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jing","family":"Zhang","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, North China University of Technology, Beijing 100144, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2025,8,4]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"052105","DOI":"10.1063\/1.2969066","article-title":"Electron mobility in phosphorous doped {111} homoepitaxial diamond","volume":"93","author":"Pernot","year":"2008","journal-title":"Appl. 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