{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,10]],"date-time":"2026-04-10T16:47:22Z","timestamp":1775839642403,"version":"3.50.1"},"reference-count":39,"publisher":"MDPI AG","issue":"1","license":[{"start":{"date-parts":[[2026,1,4]],"date-time":"2026-01-04T00:00:00Z","timestamp":1767484800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"National Key Research and Development Program of China","award":["2024YFB3816600"],"award-info":[{"award-number":["2024YFB3816600"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Materials"],"abstract":"<jats:p>This study investigates the synergistic effects of co-doping with ultralow-concentration nitrogen and trace carbon dioxide on the growth of polycrystalline diamond films via microwave plasma chemical vapor deposition (MPCVD). The films were characterized using scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and photoluminescence spectroscopy. Results indicate that trace nitrogen effectively promotes &lt;111&gt; oriented growth and enhances the deposition rate, whereas excessive nitrogen leads to the formation of defects such as pores and microcracks. The introduction of CO2 suppresses the formation of nitrogen-vacancy-related defects through a selective etching mechanism. Under co-doping conditions, diamond films with high growth rates, strong &lt;111&gt; texture, and superior thermal conductivity (up to 1863.94 W\u00b7m\u22121\u00b7K\u22121) were successfully synthesized, demonstrating significant potential for thermal management applications in high-power integrated circuits.<\/jats:p>","DOI":"10.3390\/ma19010183","type":"journal-article","created":{"date-parts":[[2026,1,5]],"date-time":"2026-01-05T10:03:48Z","timestamp":1767607428000},"page":"183","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Enhancing the Quality of Diamond Film Growth Through the Synergistic Addition of Nitrogen and Carbon Dioxide"],"prefix":"10.3390","volume":"19","author":[{"ORCID":"https:\/\/orcid.org\/0009-0004-4820-7796","authenticated-orcid":false,"given":"Zhanpeng","family":"Sheng","sequence":"first","affiliation":[{"name":"College of Chemical Engineering, Zhejiang University of Technology, Hangzhou 310000, China"},{"name":"State Key Laboratory of Advanced Marine Materials, Zhejiang Key Laboratory of Extreme-environmental Material Surfaces and Interfaces, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xuejian","family":"Cui","sequence":"additional","affiliation":[{"name":"College of Chemical Engineering, Zhejiang University of Technology, Hangzhou 310000, China"},{"name":"State Key Laboratory of Advanced Marine Materials, Zhejiang Key Laboratory of Extreme-environmental Material Surfaces and Interfaces, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Lei","family":"Zhao","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Advanced Marine Materials, Zhejiang Key Laboratory of Extreme-environmental Material Surfaces and Interfaces, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yihan","family":"Lv","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Advanced Marine Materials, Zhejiang Key Laboratory of Extreme-environmental Material Surfaces and Interfaces, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Rongchen","family":"Zhang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Advanced Marine Materials, Zhejiang Key Laboratory of Extreme-environmental Material Surfaces and Interfaces, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Defang","family":"Kon","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Advanced Marine Materials, Zhejiang Key Laboratory of Extreme-environmental Material Surfaces and Interfaces, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Nan","family":"Jiang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Advanced Marine Materials, Zhejiang Key Laboratory of Extreme-environmental Material Surfaces and Interfaces, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7314-0213","authenticated-orcid":false,"given":"Jian","family":"Yi","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Advanced Marine Materials, Zhejiang Key Laboratory of Extreme-environmental Material Surfaces and Interfaces, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Lingxia","family":"Zheng","sequence":"additional","affiliation":[{"name":"College of Chemical Engineering, Zhejiang University of Technology, Hangzhou 310000, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2026,1,4]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"58880","DOI":"10.1021\/acsami.4c13702","article-title":"Significantly Enhanced Interfacial Thermal Conductance across GaN\/Diamond Interfaces Utilizing AlxGa1\u2013xN as a Phonon Bridge","volume":"16","author":"Wu","year":"2024","journal-title":"ACS Appl. 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