{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,15]],"date-time":"2026-06-15T20:45:16Z","timestamp":1781556316123,"version":"3.54.5"},"reference-count":77,"publisher":"MDPI AG","issue":"5","license":[{"start":{"date-parts":[[2026,2,28]],"date-time":"2026-02-28T00:00:00Z","timestamp":1772236800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Materials"],"abstract":"<jats:p>The significant disparity between the size and electronegativity of N and group-V (P, As, Sb) atoms in dilute III\u2013V-Ns remains a cornerstone for developing the next-generation electronics. Variations in the structural, optical, and phonon properties of the quaternary GaAs1\u2212x\u2212ySbyNx alloys are being used for improving the high-performance photovoltaic energy and optoelectronic technologies. Bandgap Eg tunability has assisted efficient light emission\/detection to cover the crucial optical fiber wavelengths for the low-cost integrated chips in data communications and sensing devices. The lattice dynamical properties of these materials are critical for assessing the reliability to evaluate the performance of long-wavelength lasers, photodetectors, and multi-junction solar cells. Our systematic Raman measurements on high-quality MBE grown GaAs0.946Sb0.032N0.022\/GaAs samples have detected \u03c9TO(\u0393)GaAs and \u03c9TO(\u0393)GaAs phonons along with a high frequency NAs local mode near ~476 cm\u22121. Weak phonon structures on both sides of the broad 476 cm\u22121 band are interpreted forming a complex NAs\u2013Ga\u2013SbAs defect center. Using a realistic rigid-ion model in the Green\u2019s function framework, the simulations of impurity modes for isolated and complex defects have provided corroboration to the experimental data.<\/jats:p>","DOI":"10.3390\/ma19050923","type":"journal-article","created":{"date-parts":[[2026,3,5]],"date-time":"2026-03-05T14:19:21Z","timestamp":1772720361000},"page":"923","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Vibrational Characteristics of High-Quality MBE Grown GaAs1\u2212x\u2212ySbyNx\/GaAs (001) Epilayers"],"prefix":"10.3390","volume":"19","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-0272-3195","authenticated-orcid":false,"given":"Devki N.","family":"Talwar","sequence":"first","affiliation":[{"name":"Department of Physics & Astronomy, University of North Florida, 1 UNF Drive, Jacksonville, FL 32224, USA"},{"name":"Department of Physics, Indiana University of Pennsylvania, 975 Oakland Avenue, 56 Weyandt Hall, Indiana, PA 15705, USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3408-6538","authenticated-orcid":false,"given":"Hao-Hsiung","family":"Lin","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106319, Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2026,2,28]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"292002","DOI":"10.1088\/1361-6528\/ab1516","article-title":"Dilute nitrides-based nanowires a promising platform for nanoscale photonics and energy technology","volume":"30","author":"Buyanova","year":"2019","journal-title":"Nanotechnology"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"245305","DOI":"10.1103\/PhysRevB.69.245305","article-title":"Influence of conduction-band nonparabolicity on electron confinement and effective mass in GaNxAs1\u2212x\/GaAs quantum wells","volume":"69","author":"Tomic","year":"2004","journal-title":"Phys. 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