{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,15]],"date-time":"2026-07-15T13:41:58Z","timestamp":1784122918189,"version":"3.55.0"},"reference-count":67,"publisher":"MDPI AG","issue":"7","license":[{"start":{"date-parts":[[2026,3,24]],"date-time":"2026-03-24T00:00:00Z","timestamp":1774310400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Materials"],"abstract":"<jats:p>In this work, we present a theoretical investigation of electron\u2013surface optical phonon (SOP) interactions and Auger recombination processes in monolayer PtSe2 and PtS2 supported on polar dielectric substrates such as SiO2 and hBN. The analysis is based on a low-energy effective Hamiltonian describing the electronic structure near the K and K\u2032 valleys of the Brillouin zone, combined with the Fr\u00f6hlich interaction model to account for the coupling between charge carriers and substrate-induced optical phonons. The comparison between Auger recombination and SOP scattering is performed at a representative carrier density of n=1012\u00a0cm\u22122 within the investigated temperature range. We analyze the formation of polaronic states arising from the hybridization between electronic excitations and SOPs and evaluate the associated Rabi splitting energies and oscillator strengths. The temperature dependence of the SOP-induced scattering rates and the influence of the monolayer\u2013substrate separation on carrier\u2013phonon interactions are also examined. Our results show that electron\u2013phonon coupling strongly depends on the dielectric properties of the supporting substrate, with larger anticrossing gaps predicted for hBN-supported structures compared with SiO2-supported systems. Auger recombination constitutes the dominant carrier relaxation channel within the investigated temperature range, whereas SOP scattering becomes increasingly significant at elevated temperatures, where both mechanisms approach a comparable inelastic phonon-limited regime. These findings highlight the role of dielectric engineering in controlling carrier relaxation dynamics in Pt-based TMDC heterostructures.<\/jats:p>","DOI":"10.3390\/ma19071280","type":"journal-article","created":{"date-parts":[[2026,3,24]],"date-time":"2026-03-24T12:58:59Z","timestamp":1774357139000},"page":"1280","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Theoretical Investigation of Auger and Electron\u2013Surface Optical Phonon Processes near the K-Points in Monolayer PtSe2 and PtS2 on Polar Dielectric Substrates"],"prefix":"10.3390","volume":"19","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-9032-8453","authenticated-orcid":false,"given":"Mounira","family":"Mahdouani","sequence":"first","affiliation":[{"name":"Laboratoire de Physique des Mat\u00e9riaux Structure et Propri\u00e9t\u00e9s (LR01ES15), Groupe Physique des Composants et Dispositifs Nanom\u00e9triques, Facult\u00e9 des Sciences de Bizerte, Universit\u00e9 de Carthage, Jarzouna-Bizerte 7021, Tunisia"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Amine","family":"Oudir","sequence":"additional","affiliation":[{"name":"Laboratoire de Physique des Mat\u00e9riaux Structure et Propri\u00e9t\u00e9s (LR01ES15), Groupe Physique des Composants et Dispositifs Nanom\u00e9triques, Facult\u00e9 des Sciences de Bizerte, Universit\u00e9 de Carthage, Jarzouna-Bizerte 7021, Tunisia"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8340-8025","authenticated-orcid":false,"given":"Spiros","family":"Gardelis","sequence":"additional","affiliation":[{"name":"Condensed Matter Physics Section, Physics Department, National and Kapodistrian University of Athens, Panepistimiopolis, Zografos, 15784 Athens, Greece"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0000-7246-8700","authenticated-orcid":false,"given":"Ramzi","family":"Bourguiga","sequence":"additional","affiliation":[{"name":"Laboratoire de Physique des Mat\u00e9riaux Structure et Propri\u00e9t\u00e9s (LR01ES15), Groupe Physique des Composants et Dispositifs Nanom\u00e9triques, Facult\u00e9 des Sciences de Bizerte, Universit\u00e9 de Carthage, Jarzouna-Bizerte 7021, Tunisia"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2026,3,24]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"3015","DOI":"10.1002\/anie.201309280","article-title":"Two Dimensional Materials Beyond MoS2: Noble-Transition-Metal Dichalcogenides","volume":"53","author":"Heine","year":"2014","journal-title":"Angew. 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