{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,11]],"date-time":"2026-10-11T02:40:50Z","timestamp":1791686450016,"version":"4.3.4"},"reference-count":28,"publisher":"MDPI AG","issue":"9","license":[{"start":{"date-parts":[[2015,9,21]],"date-time":"2015-09-21T00:00:00Z","timestamp":1442793600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Materials"],"abstract":"<jats:p>: In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 \u00b0C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 \u00d7 10\u22124 \u03a9\/cm), carrier concentration (4.1 \u00d7 1021 cm\u22123), carrier mobility (10 cm2\/Vs),  and mean visible-light transmittance (90%) at wavelengths of 400\u2013800 nm at a deposition temperature of 400 \u00b0C. The superior carrier concentration of the Ti-doped ITO alloys  (&gt;1021 cm\u22123) with a high figure of merit (81.1 \u00d7 10\u22123 \u2126\u22121) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in  optoelectronic devices.<\/jats:p>","DOI":"10.3390\/ma8095316","type":"journal-article","created":{"date-parts":[[2015,9,21]],"date-time":"2015-09-21T10:17:32Z","timestamp":1442830652000},"page":"6471-6481","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":28,"title":["Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film"],"prefix":"10.3390","volume":"8","author":[{"given":"Nen-Wen","family":"Pu","sequence":"first","affiliation":[{"name":"Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wei-Sheng","family":"Liu","sequence":"additional","affiliation":[{"name":"Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Huai-Ming","family":"Cheng","sequence":"additional","affiliation":[{"name":"Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hung-Chun","family":"Hu","sequence":"additional","affiliation":[{"name":"Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wei-Ting","family":"Hsieh","sequence":"additional","affiliation":[{"name":"Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hau-Wei","family":"Yu","sequence":"additional","affiliation":[{"name":"Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shih-Chang","family":"Liang","sequence":"additional","affiliation":[{"name":"Materials & Electro-Optics Research Division, Chung-Shan Institute of Science and Technology, Lung Tan 32599, Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2015,9,21]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"2129","DOI":"10.1016\/j.solmat.2005.12.005","article-title":"Doubled layered ITO\/SnO2 conducting glass for substrate of dye-sensitized solar cells","volume":"90","author":"Ngamsinlapasathian","year":"2006","journal-title":"Sol. 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