{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,7]],"date-time":"2026-10-07T06:24:06Z","timestamp":1791354246980,"version":"4.3.1"},"reference-count":113,"publisher":"MDPI AG","issue":"4","license":[{"start":{"date-parts":[[2023,4,13]],"date-time":"2023-04-13T00:00:00Z","timestamp":1681344000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"International Cooperation Project of Guangdong Province","award":["2019A050510002"],"award-info":[{"award-number":["2019A050510002"]}]},{"name":"International Cooperation Project of Guangdong Province","award":["2023A1515011467"],"award-info":[{"award-number":["2023A1515011467"]}]},{"name":"Natural Science Foundation of Guangdong Province","award":["2019A050510002"],"award-info":[{"award-number":["2019A050510002"]}]},{"name":"Natural Science Foundation of Guangdong Province","award":["2023A1515011467"],"award-info":[{"award-number":["2023A1515011467"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Micromachines"],"abstract":"<jats:p>AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) have great application prospects in sterilization, UV phototherapy, biological monitoring and other aspects. Due to their advantages of energy conservation, environmental protection and easy miniaturization realization, they have garnered much interest and been widely researched. However, compared with InGaN-based blue LEDs, the efficiency of AlGaN-based DUV LEDs is still very low. This paper first introduces the research background of DUV LEDs. Then, various methods to improve the efficiency of DUV LED devices are summarized from three aspects: internal quantum efficiency (IQE), light extraction efficiency (LEE) and wall-plug efficiency (WPE). Finally, the future development of efficient AlGaN-based DUV LEDs is proposed.<\/jats:p>","DOI":"10.3390\/mi14040844","type":"journal-article","created":{"date-parts":[[2023,4,14]],"date-time":"2023-04-14T02:28:12Z","timestamp":1681439292000},"page":"844","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":43,"title":["Research Progress of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes"],"prefix":"10.3390","volume":"14","author":[{"given":"Ruiqiang","family":"Xu","sequence":"first","affiliation":[{"name":"Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Physics and Opto-Electronic Engineering, Guangdong University of Technology, Guangzhou 510006, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Qiushi","family":"Kang","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Guangdong University of Technology, Guangzhou 510006, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Youwei","family":"Zhang","sequence":"additional","affiliation":[{"name":"Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Physics and Opto-Electronic Engineering, Guangdong University of Technology, Guangzhou 510006, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3603-0653","authenticated-orcid":false,"given":"Xiaoli","family":"Zhang","sequence":"additional","affiliation":[{"name":"Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Physics and Opto-Electronic Engineering, Guangdong University of Technology, Guangzhou 510006, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zihui","family":"Zhang","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Guangdong University of Technology, Guangzhou 510006, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2023,4,13]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"37","DOI":"10.1063\/1.1432112","article-title":"Efficient 230\u2013280 nm emission from high-Al-content AlGaN-based multiquantum wells","volume":"80","author":"Hirayama","year":"2002","journal-title":"Appl. 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