{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,15]],"date-time":"2026-09-15T22:00:26Z","timestamp":1789509626872,"version":"build-2803163510"},"reference-count":49,"publisher":"MDPI AG","issue":"8","license":[{"start":{"date-parts":[[2023,8,11]],"date-time":"2023-08-11T00:00:00Z","timestamp":1691712000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100006012","name":"Christian Doppler Research Association","doi-asserted-by":"publisher","award":["1558669"],"award-info":[{"award-number":["1558669"]}],"id":[{"id":"10.13039\/501100006012","id-type":"DOI","asserted-by":"publisher"}]},{"name":"TU Wien Bibliothek","award":["1558669"],"award-info":[{"award-number":["1558669"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Micromachines"],"abstract":"<jats:p>We employ a fully three-dimensional model coupling magnetization, charge, spin, and temperature dynamics to study temperature effects in spin-orbit torque (SOT) magnetoresistive random access memory (MRAM). SOTs are included by considering spin currents generated through the spin Hall effect. We scale the magnetization parameters with the temperature. Numerical experiments show several time scales for temperature dynamics. The relatively slow temperature increase, after a rapid initial temperature rise, introduces an incubation time to the switching. Such a behavior cannot be reproduced with a constant temperature model. Furthermore, the critical SOT switching voltage is significantly reduced by the increased temperature. We demonstrate this phenomenon for switching of field-free SOT-MRAM. In addition, with an external-field-assisted switching, the critical SOT voltage shows a parabolic decrease with respect to the voltage applied across the magnetic tunnel junction (MTJ) of the SOT-MRAM cell, in agreement with recent experimental data.<\/jats:p>","DOI":"10.3390\/mi14081581","type":"journal-article","created":{"date-parts":[[2023,8,11]],"date-time":"2023-08-11T10:20:16Z","timestamp":1691749216000},"page":"1581","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":14,"title":["A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices"],"prefix":"10.3390","volume":"14","author":[{"given":"Tom\u00e1\u0161","family":"Had\u00e1mek","sequence":"first","affiliation":[{"name":"Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic, Institute for Microelectronics, TU Wien, Gu\u00dfhausstra\u00dfe 27-29, A-1040 Wien, Austria"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8499-1563","authenticated-orcid":false,"given":"Nils Petter","family":"J\u00f8rstad","sequence":"additional","affiliation":[{"name":"Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic, Institute for Microelectronics, TU Wien, Gu\u00dfhausstra\u00dfe 27-29, A-1040 Wien, Austria"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9019-4835","authenticated-orcid":false,"given":"Roberto Lacerda","family":"de Orio","sequence":"additional","affiliation":[{"name":"Institute for Microelectronics, TU Wien, Gu\u00dfhausstra\u00dfe 27-29, A-1040 Wien, Austria"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wolfgang","family":"Goes","sequence":"additional","affiliation":[{"name":"Silvaco Europe Ltd., Cambridge PE27 5JL, UK"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5583-6177","authenticated-orcid":false,"given":"Siegfried","family":"Selberherr","sequence":"additional","affiliation":[{"name":"Institute for Microelectronics, TU Wien, Gu\u00dfhausstra\u00dfe 27-29, A-1040 Wien, Austria"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Viktor","family":"Sverdlov","sequence":"additional","affiliation":[{"name":"Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic, Institute for Microelectronics, TU Wien, Gu\u00dfhausstra\u00dfe 27-29, A-1040 Wien, Austria"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2023,8,11]]},"reference":[{"key":"ref_1","unstructured":"Chang, M.T., Rosenfeld, P., Lu, S.L., and Jacob, B. 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