{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,31]],"date-time":"2026-01-31T01:05:39Z","timestamp":1769821539625,"version":"3.49.0"},"reference-count":49,"publisher":"MDPI AG","issue":"10","license":[{"start":{"date-parts":[[2023,9,30]],"date-time":"2023-09-30T00:00:00Z","timestamp":1696032000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100006769","name":"Russian Science Foundation","doi-asserted-by":"publisher","award":["22-42-02021"],"award-info":[{"award-number":["22-42-02021"]}],"id":[{"id":"10.13039\/501100006769","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100006769","name":"Russian Science Foundation","doi-asserted-by":"publisher","award":["122021000036-3"],"award-info":[{"award-number":["122021000036-3"]}],"id":[{"id":"10.13039\/501100006769","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100006769","name":"Russian Science Foundation","doi-asserted-by":"publisher","award":["122021000039-4"],"award-info":[{"award-number":["122021000039-4"]}],"id":[{"id":"10.13039\/501100006769","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Ministry of Science and Higher Education of the Russian Federation","award":["22-42-02021"],"award-info":[{"award-number":["22-42-02021"]}]},{"name":"Ministry of Science and Higher Education of the Russian Federation","award":["122021000036-3"],"award-info":[{"award-number":["122021000036-3"]}]},{"name":"Ministry of Science and Higher Education of the Russian Federation","award":["122021000039-4"],"award-info":[{"award-number":["122021000039-4"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Micromachines"],"abstract":"<jats:p>The electrical resistivity and the Hall effect of topological insulator Bi2Te3 and Bi2Se3 single crystals were studied in the temperature range from 4.2 to 300 K and in magnetic fields up to 10 T. Theoretical calculations of the electronic structure of these compounds were carried out in density functional approach, taking into account spin\u2013orbit coupling and crystal structure data for temperatures of 5, 50 and 300 K. A clear correlation was found between the density of electronic states at the Fermi level and the current carrier concentration. In the case of Bi2Te3, the density of states at the Fermi level and the current carrier concentration increase with increasing temperature, from 0.296 states eV\u22121 cell\u22121 (5 K) to 0.307 states eV\u22121 cell\u22121 (300 K) and from 0.9 \u00d7 1019 cm\u22123 (5 K) to 2.6 \u00d7 1019 cm\u22123 (300 K), respectively. On the contrary, in the case of Bi2Se3, the density of states decreases with increasing temperature, from 0.201 states eV\u22121 cell\u22121 (5 K) to 0.198 states eV\u22121 cell\u22121 (300 K), and, as a consequence, the charge carrier concentration also decreases from 2.94 \u00d7 1019 cm\u22123 (5 K) to 2.81 \u00d7 1019 cm\u22123 (300 K).<\/jats:p>","DOI":"10.3390\/mi14101888","type":"journal-article","created":{"date-parts":[[2023,10,1]],"date-time":"2023-10-01T16:58:09Z","timestamp":1696179489000},"page":"1888","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":14,"title":["Electronic Structure and Transport Properties of Bi2Te3 and Bi2Se3 Single Crystals"],"prefix":"10.3390","volume":"14","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-2044-1789","authenticated-orcid":false,"given":"Vyacheslav V.","family":"Marchenkov","sequence":"first","affiliation":[{"name":"M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620108 Ekaterinburg, Russia"},{"name":"Institute of Physics and Technology, Ural Federal University Named after the First President of Russia B.N. Yeltsin, 620002 Ekaterinburg, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4459-0893","authenticated-orcid":false,"given":"Alexey V.","family":"Lukoyanov","sequence":"additional","affiliation":[{"name":"M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620108 Ekaterinburg, Russia"},{"name":"Institute of Physics and Technology, Ural Federal University Named after the First President of Russia B.N. Yeltsin, 620002 Ekaterinburg, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0009-0001-1618-6773","authenticated-orcid":false,"given":"Semyon T.","family":"Baidak","sequence":"additional","affiliation":[{"name":"M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620108 Ekaterinburg, Russia"},{"name":"Institute of Physics and Technology, Ural Federal University Named after the First President of Russia B.N. Yeltsin, 620002 Ekaterinburg, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8540-8720","authenticated-orcid":false,"given":"Alexandra N.","family":"Perevalova","sequence":"additional","affiliation":[{"name":"M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620108 Ekaterinburg, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4755-3839","authenticated-orcid":false,"given":"Bogdan M.","family":"Fominykh","sequence":"additional","affiliation":[{"name":"M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620108 Ekaterinburg, Russia"},{"name":"Institute of Physics and Technology, Ural Federal University Named after the First President of Russia B.N. Yeltsin, 620002 Ekaterinburg, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Sergey V.","family":"Naumov","sequence":"additional","affiliation":[{"name":"M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620108 Ekaterinburg, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Elena B.","family":"Marchenkova","sequence":"additional","affiliation":[{"name":"M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620108 Ekaterinburg, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2023,9,30]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"494","DOI":"10.1103\/PhysRevLett.45.494","article-title":"New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance","volume":"45","author":"Klitzing","year":"1980","journal-title":"Phys. Rev. Lett."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"405","DOI":"10.1103\/PhysRevLett.49.405","article-title":"Quantized Hall Conductance in a Two-Dimensional Periodic Potential","volume":"49","author":"Thouless","year":"1982","journal-title":"Phys. Rev. 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