{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,21]],"date-time":"2026-08-21T11:31:43Z","timestamp":1787311903499,"version":"build-2736575974"},"reference-count":128,"publisher":"MDPI AG","issue":"6","license":[{"start":{"date-parts":[[2024,5,24]],"date-time":"2024-05-24T00:00:00Z","timestamp":1716508800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100003130","name":"Research Foundation-Flanders (FWO)","doi-asserted-by":"publisher","award":["1S72223N"],"award-info":[{"award-number":["1S72223N"]}],"id":[{"id":"10.13039\/501100003130","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100003130","name":"Research Foundation-Flanders (FWO)","doi-asserted-by":"publisher","award":["C14\/18\/074"],"award-info":[{"award-number":["C14\/18\/074"]}],"id":[{"id":"10.13039\/501100003130","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100004040","name":"Katholieke Universiteit Leuven (KU Leuven)","doi-asserted-by":"publisher","award":["1S72223N"],"award-info":[{"award-number":["1S72223N"]}],"id":[{"id":"10.13039\/501100004040","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100004040","name":"Katholieke Universiteit Leuven (KU Leuven)","doi-asserted-by":"publisher","award":["C14\/18\/074"],"award-info":[{"award-number":["C14\/18\/074"]}],"id":[{"id":"10.13039\/501100004040","id-type":"DOI","asserted-by":"publisher"}]},{"name":"FWO-FNRS Weave program","award":["1S72223N"],"award-info":[{"award-number":["1S72223N"]}]},{"name":"FWO-FNRS Weave program","award":["C14\/18\/074"],"award-info":[{"award-number":["C14\/18\/074"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Micromachines"],"abstract":"<jats:p>Spintronics, utilizing both the charge and spin of electrons, benefits from the nonvolatility, low switching energy, and collective behavior of magnetization. These properties allow the development of magnetoresistive random access memories, with magnetic tunnel junctions (MTJs) playing a central role. Various spin logic concepts are also extensively explored. Among these, spin logic devices based on the motion of magnetic domain walls (DWs) enable the implementation of compact and energy-efficient logic circuits. In these devices, DW motion within a magnetic track enables spin information processing, while MTJs at the input and output serve as electrical writing and reading elements. DW logic holds promise for simplifying logic circuit complexity by performing multiple functions within a single device. Nevertheless, the demonstration of DW logic circuits with electrical writing and reading at the nanoscale is still needed to unveil their practical application potential. In this review, we discuss material advancements for high-speed DW motion, progress in DW logic devices, groundbreaking demonstrations of current-driven DW logic, and its potential for practical applications. Additionally, we discuss alternative approaches for current-free information propagation, along with challenges and prospects for the development of DW logic.<\/jats:p>","DOI":"10.3390\/mi15060696","type":"journal-article","created":{"date-parts":[[2024,5,27]],"date-time":"2024-05-27T10:14:07Z","timestamp":1716804847000},"page":"696","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":15,"title":["Progress in Spin Logic Devices Based on Domain-Wall Motion"],"prefix":"10.3390","volume":"15","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-7003-5071","authenticated-orcid":false,"given":"Bob Bert","family":"Vermeulen","sequence":"first","affiliation":[{"name":"Interuniversity Microelectronics Center (IMEC), Kapeldreef 75, 3001 Leuven, Belgium"},{"name":"Department of Physics and Astronomy, Quantum Solid-State Physics (QSP) Division, Katholieke Universiteit Leuven, Celestijnenlaan 200D Box 2414, 3001 Leuven, Belgium"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4157-1956","authenticated-orcid":false,"given":"Bart","family":"Sor\u00e9e","sequence":"additional","affiliation":[{"name":"Interuniversity Microelectronics Center (IMEC), Kapeldreef 75, 3001 Leuven, Belgium"},{"name":"Department of Electrical Engineering, ESAT-INSYS Division, Katholieke Universiteit Leuven, Kasteelpark Arenberg 10, 3001 Leuven, Belgium"},{"name":"Department of Physics, Universiteit Antwerpen, Groenenborgerlaan 171, 2020 Antwerp, Belgium"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6436-9593","authenticated-orcid":false,"given":"Sebastien","family":"Couet","sequence":"additional","affiliation":[{"name":"Interuniversity Microelectronics Center (IMEC), Kapeldreef 75, 3001 Leuven, Belgium"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1377-5097","authenticated-orcid":false,"given":"Kristiaan","family":"Temst","sequence":"additional","affiliation":[{"name":"Interuniversity Microelectronics Center (IMEC), Kapeldreef 75, 3001 Leuven, Belgium"},{"name":"Department of Physics and Astronomy, Quantum Solid-State Physics (QSP) Division, Katholieke Universiteit Leuven, Celestijnenlaan 200D Box 2414, 3001 Leuven, Belgium"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6924-4298","authenticated-orcid":false,"given":"Van Dai","family":"Nguyen","sequence":"additional","affiliation":[{"name":"Interuniversity Microelectronics Center (IMEC), Kapeldreef 75, 3001 Leuven, Belgium"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2024,5,24]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Das, S., Chen, A., and Marinella, M. (2021, January 30). Beyond CMOS. Proceedings of the 2021 IEEE International Roadmap for Devices and Systems Outbriefs, Santa Clara, CA, USA.","DOI":"10.1109\/IRDS54852.2021.00011"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"2472","DOI":"10.1103\/PhysRevLett.61.2472","article-title":"Giant Magnetoresistance of (001)Fe\/(001)Cr Magnetic Superlattices","volume":"61","author":"Baibich","year":"1988","journal-title":"Phys. Rev. Lett."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"4828","DOI":"10.1103\/PhysRevB.39.4828","article-title":"Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange","volume":"39","author":"Binasch","year":"1989","journal-title":"Phys. Rev. B"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"1297","DOI":"10.1103\/PhysRevB.43.1297","article-title":"Giant magnetoresistive in soft ferromagnetic multilayers","volume":"43","author":"Dieny","year":"1991","journal-title":"Phys. Rev. B"},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"868","DOI":"10.1038\/nmat1257","article-title":"Giant room-temperature magnetoresistance in single-crystal Fe\/MgO\/Fe magnetic tunnel junctions","volume":"3","author":"Yuasa","year":"2004","journal-title":"Nat. Mater."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"862","DOI":"10.1038\/nmat1256","article-title":"Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers","volume":"3","author":"Parkin","year":"2004","journal-title":"Nat. Mater."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"9353","DOI":"10.1103\/PhysRevB.54.9353","article-title":"Emission of spin waves by a magnetic multilayer traversed by a current","volume":"54","author":"Berger","year":"1996","journal-title":"Phys. Rev. B"},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"L1","DOI":"10.1016\/0304-8853(96)00062-5","article-title":"Current-driven excitation of magnetic multilayers","volume":"159","author":"Slonczewski","year":"1996","journal-title":"J. Magn. Magn. Mater."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"530","DOI":"10.1016\/j.mattod.2017.07.007","article-title":"Spintronics based random access memory: A review","volume":"20","author":"Bhatti","year":"2017","journal-title":"Mater. Today"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"025008","DOI":"10.1103\/RevModPhys.89.025008","article-title":"Perpendicular magnetic anisotropy at transition metal\/oxide interfaces and applications","volume":"89","author":"Dieny","year":"2017","journal-title":"Rev. Mod. Phys."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"446","DOI":"10.1038\/s41928-020-0461-5","article-title":"Opportunities and challenges for spintronics in the microelectronics industry","volume":"3","author":"Dieny","year":"2020","journal-title":"Nat. Electron."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"189","DOI":"10.1038\/nature10309","article-title":"Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection","volume":"476","author":"Miron","year":"2011","journal-title":"Nature"},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"2300853","DOI":"10.1002\/adma.202300853","article-title":"Switching of Perpendicular Magnetization by Spin\u2013Orbit Torque","volume":"35","author":"Zhu","year":"2023","journal-title":"Adv. Mater."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"1466","DOI":"10.1126\/science.287.5457.1466","article-title":"Room Temperature Magnetic Quantum Cellular Automata","volume":"287","author":"Cowburn","year":"2000","journal-title":"Science"},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"205","DOI":"10.1126\/science.1120506","article-title":"Majority Logic Gate for Magnetic Quantum-Dot Cellular Automata","volume":"311","author":"Imre","year":"2006","journal-title":"Science"},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"4336","DOI":"10.1109\/TMAG.2012.2197184","article-title":"Majority Gate for Nanomagnetic Logic With Perpendicular Magnetic Anisotropy","volume":"48","author":"Breitkreutz","year":"2012","journal-title":"IEEE Trans. Magn."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"4700","DOI":"10.1038\/ncomms5700","article-title":"Magnon transistor for all-magnon data processing","volume":"5","author":"Chumak","year":"2014","journal-title":"Nat. Commun."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"eabb4042","DOI":"10.1126\/sciadv.abb4042","article-title":"Reconfigurable submicrometer spin-wave majority gate with electrical transducers","volume":"6","author":"Talmelli","year":"2020","journal-title":"Sci. Adv."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"665","DOI":"10.1063\/1.102730","article-title":"Electronic analog of the electro-optic modulator","volume":"56","author":"Datta","year":"1990","journal-title":"Appl. Phys. Lett."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"573","DOI":"10.1038\/nature05833","article-title":"Spin-based logic in semiconductors for reconfigurable large-scale circuits","volume":"447","author":"Dery","year":"2007","journal-title":"Nature"},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"35","DOI":"10.1038\/s41586-018-0770-2","article-title":"Scalable energy-efficient magnetoelectric spin\u2013orbit logic","volume":"565","author":"Manipatruni","year":"2018","journal-title":"Nature"},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"483","DOI":"10.1038\/s41586-020-2197-9","article-title":"Non-volatile electric control of spin\u2013charge conversion in a SrTiO3 Rashba system","volume":"580","author":"Trier","year":"2020","journal-title":"Nature"},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"12154","DOI":"10.1038\/s41598-017-12447-8","article-title":"Exchange-driven Magnetic Logic","volume":"7","author":"Zografos","year":"2017","journal-title":"Sci. Rep."},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"1688","DOI":"10.1126\/science.1108813","article-title":"Magnetic Domain-Wall Logic","volume":"309","author":"Allwood","year":"2005","journal-title":"Science"},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"214","DOI":"10.1038\/s41586-020-2061-y","article-title":"Current-driven magnetic domain-wall logic","volume":"579","author":"Luo","year":"2020","journal-title":"Nature"},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"375801","DOI":"10.1088\/1361-648X\/aad82f","article-title":"A majority gate with chiral magnetic solitons","volume":"30","author":"Koumpouras","year":"2018","journal-title":"J. Phys. Condens. Matter"},{"key":"ref_27","unstructured":"Parkin, S.S.P. (2004). Shiftable Magnetic Shift Register and Method of Using the Same. (6,834,005), US Patent."},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"190","DOI":"10.1126\/science.1145799","article-title":"Magnetic Domain-Wall Racetrack Memory","volume":"320","author":"Parkin","year":"2008","journal-title":"Science"},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"209","DOI":"10.1126\/science.1154587","article-title":"Current-Controlled Magnetic Domain-Wall Nanowire Shift Register","volume":"320","author":"Hayashi","year":"2008","journal-title":"Science"},{"key":"ref_30","doi-asserted-by":"crossref","first-page":"195","DOI":"10.1038\/nnano.2015.41","article-title":"Memory on the racetrack","volume":"10","author":"Parkin","year":"2015","journal-title":"Nat. Nanotechnol."},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"1065","DOI":"10.1038\/s41565-022-01213-1","article-title":"Three-dimensional racetrack memory devices designed from freestanding magnetic heterostructures","volume":"17","author":"Gu","year":"2022","journal-title":"Nat. Nanotechnol."},{"key":"ref_32","doi-asserted-by":"crossref","first-page":"529","DOI":"10.1038\/s41565-020-0655-z","article-title":"Memory devices and applications for in-memory computing","volume":"15","author":"Sebastian","year":"2020","journal-title":"Nat. Nanotechnol."},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"063001","DOI":"10.1088\/1361-6463\/ad0568","article-title":"Magnetic domain walls: Types, processes and applications","volume":"57","author":"Venkat","year":"2023","journal-title":"J. Phys. D Appl. Phys."},{"key":"ref_34","doi-asserted-by":"crossref","first-page":"1303","DOI":"10.1109\/JPROC.2020.2975719","article-title":"Magnetic Racetrack Memory: From Physics to the Cusp of Applications Within a Decade","volume":"108","author":"Khan","year":"2020","journal-title":"Proc. IEEE"},{"key":"ref_35","doi-asserted-by":"crossref","first-page":"303001","DOI":"10.1088\/1361-648X\/aa752d","article-title":"Novel domain wall dynamics in synthetic antiferromagnets","volume":"29","author":"Yang","year":"2017","journal-title":"J. Phys. Condens. Matter"},{"key":"ref_36","doi-asserted-by":"crossref","first-page":"2156","DOI":"10.1063\/1.324716","article-title":"Low-field magnetoresistance and domain drag in ferromagnets","volume":"49","author":"Berger","year":"1978","journal-title":"J. Appl. Phys."},{"key":"ref_37","doi-asserted-by":"crossref","first-page":"1266","DOI":"10.1063\/1.334524","article-title":"Observation of s-d exchange force between domain walls and electric current in very thin Permalloy films","volume":"57","author":"Freitas","year":"1985","journal-title":"J. Appl. Phys."},{"key":"ref_38","doi-asserted-by":"crossref","first-page":"4276","DOI":"10.1063\/1.340201","article-title":"Exchange forces between domain wall and electric current in permalloy films of variable thickness","volume":"63","author":"Hung","year":"1988","journal-title":"J. Appl. Phys."},{"key":"ref_39","doi-asserted-by":"crossref","first-page":"105","DOI":"10.1063\/1.1588736","article-title":"Domain wall motion induced by spin polarized currents in ferromagnetic ring structures","volume":"83","author":"Vaz","year":"2003","journal-title":"Appl. Phys. Lett."},{"key":"ref_40","doi-asserted-by":"crossref","first-page":"127204","DOI":"10.1103\/PhysRevLett.93.127204","article-title":"Roles of Nonequilibrium Conduction Electrons on the Magnetization Dynamics of Ferromagnets","volume":"93","author":"Zhang","year":"2004","journal-title":"Phys. Rev. Lett."},{"key":"ref_41","doi-asserted-by":"crossref","first-page":"990","DOI":"10.1209\/epl\/i2004-10452-6","article-title":"Micromagnetic understanding of current-driven domain wall motion in patterned nanowires","volume":"69","author":"Thiaville","year":"2005","journal-title":"Europhys. Lett."},{"key":"ref_42","doi-asserted-by":"crossref","first-page":"213","DOI":"10.1016\/j.physrep.2008.07.003","article-title":"Microscopic approach to current-driven domain wall dynamics","volume":"468","author":"Tatara","year":"2008","journal-title":"Phys. Rep."},{"key":"ref_43","doi-asserted-by":"crossref","first-page":"1272","DOI":"10.1016\/j.jmmm.2007.12.021","article-title":"Current-induced domain wall motion","volume":"320","author":"Beach","year":"2008","journal-title":"J. Magn. Magn. Mater."},{"key":"ref_44","doi-asserted-by":"crossref","first-page":"159","DOI":"10.1016\/j.mser.2011.04.001","article-title":"Current-induced domain wall motion in nanoscale ferromagnetic elements","volume":"72","author":"Boulle","year":"2011","journal-title":"Mater. Sci. Eng. R Rep."},{"key":"ref_45","doi-asserted-by":"crossref","first-page":"194","DOI":"10.1038\/nmat2961","article-title":"Observation of the intrinsic pinning of a magnetic domain wall in a ferromagnetic nanowire","volume":"10","author":"Koyama","year":"2011","journal-title":"Nat. Mater."},{"key":"ref_46","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1016\/j.physrep.2022.02.001","article-title":"Domain wall memory: Physics, materials, and devices","volume":"958","author":"Kumar","year":"2022","journal-title":"Phys. Rep."},{"key":"ref_47","doi-asserted-by":"crossref","first-page":"037204","DOI":"10.1103\/PhysRevLett.98.037204","article-title":"Current Driven Domain Wall Velocities Exceeding the Spin Angular Momentum Transfer Rate in Permalloy Nanowires","volume":"98","author":"Hayashi","year":"2007","journal-title":"Phys. Rev. Lett."},{"key":"ref_48","doi-asserted-by":"crossref","first-page":"101303","DOI":"10.1143\/APEX.1.101303","article-title":"Control of Domain Wall Position by Electrical Current in Structured Co\/Ni Wire with Perpendicular Magnetic Anisotropy","volume":"1","author":"Koyama","year":"2008","journal-title":"Appl. Phys. Express"},{"key":"ref_49","doi-asserted-by":"crossref","first-page":"419","DOI":"10.1038\/nmat3020","article-title":"Fast current-induced domain-wall motion controlled by the Rashba effect","volume":"10","author":"Miron","year":"2011","journal-title":"Nat. Mater."},{"key":"ref_50","doi-asserted-by":"crossref","first-page":"527","DOI":"10.1038\/nnano.2013.102","article-title":"Chiral spin torque at magnetic domain walls","volume":"8","author":"Ryu","year":"2013","journal-title":"Nat. Nanotechnol."},{"key":"ref_51","doi-asserted-by":"crossref","first-page":"221","DOI":"10.1038\/nnano.2014.324","article-title":"Domain-wall velocities of up to 750 m s-1 driven by exchange-coupling torque in synthetic antiferromagnets","volume":"10","author":"Yang","year":"2015","journal-title":"Nat. Nanotechnol."},{"key":"ref_52","doi-asserted-by":"crossref","first-page":"2580","DOI":"10.1021\/acs.nanolett.1c00125","article-title":"Current-Driven Domain Wall Dynamics in Ferrimagnetic Nickel-Doped Mn4N Films: Very Large Domain Wall Velocities and Reversal of Motion Direction across the Magnetic Compensation Point","volume":"21","author":"Ghosh","year":"2021","journal-title":"Nano Lett."},{"key":"ref_53","doi-asserted-by":"crossref","first-page":"37","DOI":"10.1038\/s41928-019-0345-8","article-title":"Ultrafast and energy-efficient spin\u2013orbit torque switching in compensated ferrimagnets","volume":"3","author":"Cai","year":"2020","journal-title":"Nat. Electron."},{"key":"ref_54","doi-asserted-by":"crossref","first-page":"1154","DOI":"10.1038\/s41565-018-0255-3","article-title":"Fast current-driven domain walls and small skyrmions in a compensated ferrimagnet","volume":"13","author":"Caretta","year":"2018","journal-title":"Nat. Nanotechnol."},{"key":"ref_55","doi-asserted-by":"crossref","first-page":"132508","DOI":"10.1063\/1.3570652","article-title":"Enhanced current-induced domain wall motion by tuning perpendicular magnetic anisotropy","volume":"98","author":"Emori","year":"2011","journal-title":"Appl. Phys. Lett."},{"key":"ref_56","doi-asserted-by":"crossref","first-page":"192509","DOI":"10.1063\/1.3590713","article-title":"Magnetic field insensitivity of magnetic domain wall velocity induced by electrical current in Co\/Ni nanowire","volume":"98","author":"Koyama","year":"2011","journal-title":"Appl. Phys. Lett."},{"key":"ref_57","doi-asserted-by":"crossref","first-page":"073004","DOI":"10.1143\/APEX.3.073004","article-title":"Control of Multiple Magnetic Domain Walls by Current in a Co\/Ni Nano-Wire","volume":"3","author":"Chiba","year":"2010","journal-title":"Appl. Phys. Express"},{"key":"ref_58","doi-asserted-by":"crossref","unstructured":"Thomas, L., Yang, S.H., Ryu, K.S., Hughes, B., Rettner, C., Wang, D.S., Tsai, C.H., Shen, K.H., and Parkin, S.S.P. (2011, January 5\u20137). Racetrack Memory: A high-performance, low-cost, non-volatile memory based on magnetic domain walls. Proceedings of the 2011 International Electron Devices Meeting (IEDM), Washington, DC, USA.","DOI":"10.1109\/IEDM.2011.6131603"},{"key":"ref_59","doi-asserted-by":"crossref","first-page":"117203","DOI":"10.1103\/PhysRevLett.95.117203","article-title":"Nanometer Scale Observation of High Efficiency Thermally Assisted Current-Driven Domain Wall Depinning","volume":"95","author":"Ravelosona","year":"2005","journal-title":"Phys. Rev. Lett."},{"key":"ref_60","doi-asserted-by":"crossref","first-page":"072508","DOI":"10.1063\/1.2450664","article-title":"Threshold currents to move domain walls in films with perpendicular anisotropy","volume":"90","author":"Ravelosona","year":"2007","journal-title":"Appl. Phys. Lett."},{"key":"ref_61","doi-asserted-by":"crossref","first-page":"539","DOI":"10.1038\/nature02441","article-title":"Current-induced domain-wall switching in a ferromagnetic semiconductor structure","volume":"428","author":"Yamanouchi","year":"2004","journal-title":"Nature"},{"key":"ref_62","doi-asserted-by":"crossref","first-page":"082504","DOI":"10.1063\/1.3558917","article-title":"Current-induced domain wall motion in perpendicularly magnetized CoFeB nanowire","volume":"98","author":"Fukami","year":"2011","journal-title":"Appl. Phys. Lett."},{"key":"ref_63","doi-asserted-by":"crossref","first-page":"333","DOI":"10.1038\/nphys3593","article-title":"Adiabatic spin-transfer-torque-induced domain wall creep in a magnetic metal","volume":"12","author":"DuttaGupta","year":"2015","journal-title":"Nat. Phys."},{"key":"ref_64","doi-asserted-by":"crossref","first-page":"054041","DOI":"10.1103\/PhysRevApplied.11.054041","article-title":"Low Spin Polarization in Heavy-Metal\u2013Ferromagnet Structures Detected Through Domain-Wall Motion by Synchronized Magnetic Field and Current","volume":"11","author":"Zhang","year":"2019","journal-title":"Phys. Rev. Appl."},{"key":"ref_65","doi-asserted-by":"crossref","first-page":"262504","DOI":"10.1063\/1.3062855","article-title":"High domain wall velocities induced by current in ultrathin Pt\/Co\/AlOx wires with perpendicular magnetic anisotropy","volume":"93","author":"Moore","year":"2008","journal-title":"Appl. Phys. Lett."},{"key":"ref_66","doi-asserted-by":"crossref","first-page":"137202","DOI":"10.1103\/PhysRevLett.102.137202","article-title":"Domain Wall Spin Torquemeter","volume":"102","author":"Miron","year":"2009","journal-title":"Phys. Rev. Lett."},{"key":"ref_67","doi-asserted-by":"crossref","first-page":"053006","DOI":"10.7567\/APEX.7.053006","article-title":"Transition in mechanism for current-driven magnetic domain wall dynamics","volume":"7","author":"Ueda","year":"2014","journal-title":"Appl. Phys. Express"},{"key":"ref_68","doi-asserted-by":"crossref","first-page":"299","DOI":"10.1038\/nmat3553","article-title":"Domain wall depinning governed by the spin Hall effect","volume":"12","author":"Haazen","year":"2013","journal-title":"Nat. Mater."},{"key":"ref_69","doi-asserted-by":"crossref","first-page":"241","DOI":"10.1016\/0022-3697(58)90076-3","article-title":"A thermodynamic theory of \u201cweak\u201d ferromagnetism of antiferromagnetics","volume":"4","author":"Dzyaloshinsky","year":"1958","journal-title":"J. Phys. Chem. Solids"},{"key":"ref_70","doi-asserted-by":"crossref","first-page":"91","DOI":"10.1103\/PhysRev.120.91","article-title":"Anisotropic Superexchange Interaction and Weak Ferromagnetism","volume":"120","author":"Moriya","year":"1960","journal-title":"Phys. Rev."},{"key":"ref_71","doi-asserted-by":"crossref","first-page":"611","DOI":"10.1038\/nmat3675","article-title":"Current-driven dynamics of chiral ferromagnetic domain walls","volume":"12","author":"Emori","year":"2013","journal-title":"Nat. Mater."},{"key":"ref_72","doi-asserted-by":"crossref","first-page":"033001","DOI":"10.7567\/APEX.6.033001","article-title":"Current-Induced Magnetic Domain Wall Motion in a Co\/Ni Nanowire with Structural Inversion Asymmetry","volume":"6","author":"Koyama","year":"2013","journal-title":"Appl. Phys. Express"},{"key":"ref_73","doi-asserted-by":"crossref","first-page":"3910","DOI":"10.1038\/ncomms4910","article-title":"Chiral spin torque arising from proximity-induced magnetization","volume":"5","author":"Ryu","year":"2014","journal-title":"Nat. Commun."},{"key":"ref_74","doi-asserted-by":"crossref","first-page":"1826","DOI":"10.1021\/acs.nanolett.7b05086","article-title":"Highly Asymmetric Chiral Domain-Wall Velocities in Y-Shaped Junctions","volume":"18","author":"Garg","year":"2018","journal-title":"Nano Lett."},{"key":"ref_75","doi-asserted-by":"crossref","first-page":"2304","DOI":"10.1103\/PhysRevLett.64.2304","article-title":"Oscillations in exchange coupling and magnetoresistance in metallic superlattice structures: Co\/Ru, Co\/Cr, and Fe\/Cr","volume":"64","author":"Parkin","year":"1990","journal-title":"Phys. Rev. Lett."},{"key":"ref_76","doi-asserted-by":"crossref","first-page":"4984","DOI":"10.1038\/s41467-018-07373-w","article-title":"Exchange coupling torque in ferrimagnetic Co\/Gd bilayer maximized near angular momentum compensation temperature","volume":"9","author":"Ma","year":"2018","journal-title":"Nat. Commun."},{"key":"ref_77","doi-asserted-by":"crossref","first-page":"057701","DOI":"10.1103\/PhysRevLett.121.057701","article-title":"Current-Induced Domain Wall Motion in a Compensated Ferrimagnet","volume":"121","author":"Siddiqui","year":"2018","journal-title":"Phys. Rev. Lett."},{"key":"ref_78","doi-asserted-by":"crossref","first-page":"167201","DOI":"10.1103\/PhysRevLett.118.167201","article-title":"Anomalous Current-Induced Spin Torques in Ferrimagnets near Compensation","volume":"118","author":"Mishra","year":"2017","journal-title":"Phys. Rev. Lett."},{"key":"ref_79","doi-asserted-by":"crossref","first-page":"064410","DOI":"10.1103\/PhysRevB.96.064410","article-title":"Temperature dependence of spin-orbit torques across the magnetic compensation point in a ferrimagnetic TbCo alloy film","volume":"96","author":"Ueda","year":"2017","journal-title":"Phys. Rev. B"},{"key":"ref_80","doi-asserted-by":"crossref","first-page":"011106","DOI":"10.1063\/5.0159669","article-title":"Domain walls speed up in insulating ferrimagnetic garnets","volume":"12","author":"Caretta","year":"2024","journal-title":"APL Mater."},{"key":"ref_81","doi-asserted-by":"crossref","first-page":"087203","DOI":"10.1103\/PhysRevLett.117.087203","article-title":"Antiferromagnetic Domain Wall Motion Driven by Spin-Orbit Torques","volume":"117","author":"Shiino","year":"2016","journal-title":"Phys. Rev. Lett."},{"key":"ref_82","doi-asserted-by":"crossref","first-page":"362","DOI":"10.1038\/s41565-018-0079-1","article-title":"Current polarity-dependent manipulation of antiferromagnetic domains","volume":"13","author":"Wadley","year":"2018","journal-title":"Nat. Nanotechnol."},{"key":"ref_83","doi-asserted-by":"crossref","first-page":"080902","DOI":"10.1063\/5.0156439","article-title":"Perspective on imaging antiferromagnetic domains in thin films with the magneto-optical birefringence effect","volume":"11","author":"Zhou","year":"2023","journal-title":"APL Mater."},{"key":"ref_84","doi-asserted-by":"crossref","first-page":"102504","DOI":"10.1063\/1.2345032","article-title":"Magnetic domain wall serial-in parallel-out shift register","volume":"89","author":"Allwood","year":"2006","journal-title":"Appl. Phys. Lett."},{"key":"ref_85","doi-asserted-by":"crossref","first-page":"20130","DOI":"10.1038\/srep20130","article-title":"Reconfigurable logic via gate controlled domain wall trajectory in magnetic network structure","volume":"6","author":"Murapaka","year":"2016","journal-title":"Sci. Rep."},{"key":"ref_86","doi-asserted-by":"crossref","first-page":"2375","DOI":"10.1021\/acsaelm.0c00318","article-title":"Paradigm of Magnetic Domain Wall-Based In-Memory Computing","volume":"2","author":"Zheng","year":"2020","journal-title":"ACS Appl. Electron. Mater."},{"key":"ref_87","doi-asserted-by":"crossref","first-page":"9603","DOI":"10.1038\/srep09603","article-title":"Transverse Domain Wall Profile for Spin Logic Applications","volume":"5","author":"Goolaup","year":"2015","journal-title":"Sci. Rep."},{"key":"ref_88","doi-asserted-by":"crossref","first-page":"1807282","DOI":"10.1002\/adfm.201807282","article-title":"Toward Chirality-Encoded Domain Wall Logic","volume":"29","author":"Omari","year":"2019","journal-title":"Adv. Funct. Mater."},{"key":"ref_89","doi-asserted-by":"crossref","unstructured":"Raymenants, E., Wan, D., Couet, S., Zografos, O., Nguyen, V.D., Vaysset, A., Souriau, L., Thiam, A., Manfrini, M., and Brus, S. (2018, January 1\u20135). Scaled spintronic logic device based on domain wall motion in magnetically interconnected tunnel junctions. Proceedings of the 2018 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA.","DOI":"10.1109\/IEDM.2018.8614587"},{"key":"ref_90","doi-asserted-by":"crossref","first-page":"10275","DOI":"10.1038\/ncomms10275","article-title":"Logic circuit prototypes for three-terminal magnetic tunnel junctions with mobile domain walls","volume":"7","author":"Siddiqui","year":"2016","journal-title":"Nat. Commun."},{"key":"ref_91","doi-asserted-by":"crossref","first-page":"112401","DOI":"10.1063\/5.0038521","article-title":"Domain wall-magnetic tunnel junction spin\u2013orbit torque devices and circuits for in-memory computing","volume":"118","author":"Alamdar","year":"2021","journal-title":"Appl. Phys. Lett."},{"key":"ref_92","doi-asserted-by":"crossref","first-page":"034077","DOI":"10.1103\/PhysRevApplied.15.034077","article-title":"Field- and Current-Driven Magnetic Domain-Wall Inverter and Diode","volume":"15","author":"Luo","year":"2021","journal-title":"Phys. Rev. Appl."},{"key":"ref_93","doi-asserted-by":"crossref","first-page":"055921","DOI":"10.1063\/1.5007622","article-title":"Interconnected magnetic tunnel junctions for spin-logic applications","volume":"8","author":"Manfrini","year":"2018","journal-title":"AIP Adv."},{"key":"ref_94","doi-asserted-by":"crossref","first-page":"392","DOI":"10.1038\/s41928-021-00593-x","article-title":"Nanoscale domain wall devices with magnetic tunnel junction read and write","volume":"4","author":"Raymenants","year":"2021","journal-title":"Nat. Electron."},{"key":"ref_95","doi-asserted-by":"crossref","first-page":"252403","DOI":"10.1063\/5.0013369","article-title":"Optoelectronic domain-wall motion for logic computing","volume":"116","author":"Zhang","year":"2020","journal-title":"Appl. Phys. Lett."},{"key":"ref_96","doi-asserted-by":"crossref","first-page":"6261","DOI":"10.1021\/acsnano.2c09744","article-title":"Ultralow Energy Domain Wall Device for Spin-Based Neuromorphic Computing","volume":"17","author":"Kumar","year":"2023","journal-title":"ACS Nano"},{"key":"ref_97","doi-asserted-by":"crossref","first-page":"1800197","DOI":"10.1002\/pssr.201800197","article-title":"Nanoscale Compositional Modification in Co\/Pd Multilayers for Controllable Domain Wall Pinning in Racetrack Memory","volume":"12","author":"Jin","year":"2018","journal-title":"Phys. Status Solidi RRL"},{"key":"ref_98","doi-asserted-by":"crossref","first-page":"445001","DOI":"10.1088\/1361-6463\/ab35b7","article-title":"Synaptic element for neuromorphic computing using a magnetic domain wall device with synthetic pinning sites","volume":"52","author":"Jin","year":"2019","journal-title":"J. Phys. D Appl. Phys."},{"key":"ref_99","doi-asserted-by":"crossref","first-page":"182410","DOI":"10.1063\/1.5002632","article-title":"Multilevel storage device based on domain-wall motion in a magnetic tunnel junction","volume":"111","author":"Cai","year":"2017","journal-title":"Appl. Phys. Lett."},{"key":"ref_100","doi-asserted-by":"crossref","first-page":"2200563","DOI":"10.1002\/aelm.202200563","article-title":"Shape-Dependent Multi-Weight Magnetic Artificial Synapses for Neuromorphic Computing","volume":"8","author":"Leonard","year":"2022","journal-title":"Adv. Electron. Mater."},{"key":"ref_101","doi-asserted-by":"crossref","first-page":"31510","DOI":"10.1038\/srep31510","article-title":"A magnetic synapse: Multilevel spin-torque memristor with perpendicular anisotropy","volume":"6","author":"Lequeux","year":"2016","journal-title":"Sci. Rep."},{"key":"ref_102","doi-asserted-by":"crossref","first-page":"1033","DOI":"10.1021\/acs.nanolett.9b04200","article-title":"Magnetic Domain Wall Based Synaptic and Activation Function Generator for Neuromorphic Accelerators","volume":"20","author":"Siddiqui","year":"2019","journal-title":"Nano Lett."},{"key":"ref_103","doi-asserted-by":"crossref","first-page":"021001","DOI":"10.1088\/2634-4386\/acdb96","article-title":"Machine learning using magnetic stochastic synapses","volume":"3","author":"Ellis","year":"2023","journal-title":"Neuromorph. Comput. Eng."},{"key":"ref_104","doi-asserted-by":"crossref","first-page":"262406","DOI":"10.1063\/5.0152211","article-title":"Stochastic domain wall-magnetic tunnel junction artificial neurons for noise-resilient spiking neural networks","volume":"122","author":"Leonard","year":"2023","journal-title":"Appl. Phys. Lett."},{"key":"ref_105","doi-asserted-by":"crossref","first-page":"2008135","DOI":"10.1002\/adma.202008135","article-title":"Tunable Stochasticity in an Artificial Spin Network","volume":"33","author":"Massouras","year":"2021","journal-title":"Adv. Mater."},{"key":"ref_106","doi-asserted-by":"crossref","first-page":"7810","DOI":"10.1109\/JSEN.2020.2980021","article-title":"A 126 \u03bcW Readout Circuit in 65 nm CMOS With Successive Approximation-Based Thresholding for Domain Wall Magnet-Based Random Number Generator","volume":"20","author":"Narasimman","year":"2020","journal-title":"IEEE Sens. J."},{"key":"ref_107","doi-asserted-by":"crossref","first-page":"2008389","DOI":"10.1002\/adfm.202008389","article-title":"Dynamically Driven Emergence in a Nanomagnetic System","volume":"31","author":"Dawidek","year":"2021","journal-title":"Adv. Funct. Mater."},{"key":"ref_108","doi-asserted-by":"crossref","first-page":"230","DOI":"10.1038\/s42005-023-01352-4","article-title":"Reconfigurable reservoir computing in a magnetic metamaterial","volume":"6","author":"Vidamour","year":"2023","journal-title":"Commun. Phys."},{"key":"ref_109","doi-asserted-by":"crossref","first-page":"1435","DOI":"10.1126\/science.aau7913","article-title":"Chirally coupled nanomagnets","volume":"363","author":"Luo","year":"2019","journal-title":"Science"},{"key":"ref_110","doi-asserted-by":"crossref","unstructured":"Raymenants, E., Wan, D., Couet, S., Canvel, Y., Thiam, A., Tsvetanova, D., Souriau, L., Asselberghs, I., Carpenter, R., and Jossart, N. (2021, January 11\u201316). Magnetic domain walls: From physics to devices. Proceedings of the 2021 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA.","DOI":"10.1109\/IEDM19574.2021.9720689"},{"key":"ref_111","doi-asserted-by":"crossref","first-page":"2011","DOI":"10.1038\/ncomms3011","article-title":"Two-barrier stability that allows low-power operation in current-induced domain-wall motion","volume":"4","author":"Kim","year":"2013","journal-title":"Nat. Commun."},{"key":"ref_112","doi-asserted-by":"crossref","first-page":"262504","DOI":"10.1063\/1.3672828","article-title":"Magnon magnetoresistance of NiFe nanowires: Size dependence and domain wall detection","volume":"99","author":"Nguyen","year":"2011","journal-title":"Appl. Phys. Lett."},{"key":"ref_113","doi-asserted-by":"crossref","first-page":"136605","DOI":"10.1103\/PhysRevLett.107.136605","article-title":"Detection of Domain-Wall Position and Magnetization Reversal in Nanostructures Using the Magnon Contribution to the Resistivity","volume":"107","author":"Nguyen","year":"2011","journal-title":"Phys. Rev. Lett."},{"key":"ref_114","doi-asserted-by":"crossref","first-page":"5211","DOI":"10.1038\/s41598-020-62104-w","article-title":"Single-shot all-optical switching of magnetization in Tb\/Co multilayer-based electrodes","volume":"10","author":"Olivier","year":"2020","journal-title":"Sci. Rep."},{"key":"ref_115","doi-asserted-by":"crossref","first-page":"110","DOI":"10.1038\/s41467-018-08062-4","article-title":"Integrating all-optical switching with spintronics","volume":"10","author":"Lalieu","year":"2019","journal-title":"Nat. Commun."},{"key":"ref_116","doi-asserted-by":"crossref","first-page":"189","DOI":"10.1038\/s41578-019-0086-3","article-title":"Writing magnetic memory with ultrashort light pulses","volume":"4","author":"Kimel","year":"2019","journal-title":"Nat. Rev. Mater."},{"key":"ref_117","doi-asserted-by":"crossref","first-page":"5930","DOI":"10.1021\/acs.nanolett.9b01504","article-title":"Chiral Domain Wall Injector Driven by Spin\u2013Orbit Torques","volume":"19","author":"Dao","year":"2019","journal-title":"Nano Lett."},{"key":"ref_118","doi-asserted-by":"crossref","first-page":"105005","DOI":"10.1088\/0022-3727\/47\/10\/105005","article-title":"Thermally assisted domain wall nucleation in perpendicular anisotropy trilayer nanowires","volume":"47","author":"Narayanapillai","year":"2014","journal-title":"J. Phys. D Appl. Phys."},{"key":"ref_119","doi-asserted-by":"crossref","first-page":"132405","DOI":"10.1063\/1.4945089","article-title":"[Co\/Ni]-CoFeB hybrid free layer stack materials for high density magnetic random access memory applications","volume":"108","author":"Liu","year":"2016","journal-title":"Appl. Phys. Lett."},{"key":"ref_120","first-page":"1","article-title":"Top-Pinned STT-MRAM Devices With High Thermal Stability Hybrid Free Layers for High-Density Memory Applications","volume":"54","author":"Liu","year":"2018","journal-title":"IEEE Trans. Magn."},{"key":"ref_121","doi-asserted-by":"crossref","first-page":"12187","DOI":"10.1039\/C8NR01365A","article-title":"A highly thermally stable sub-20 nm magnetic random-access memory based on perpendicular shape anisotropy","volume":"10","author":"Perrissin","year":"2018","journal-title":"Nanoscale"},{"key":"ref_122","doi-asserted-by":"crossref","first-page":"025030","DOI":"10.1063\/9.0000811","article-title":"Towards fully electrically controlled domain-wall logic","volume":"14","author":"Vermeulen","year":"2024","journal-title":"AIP Adv."},{"key":"ref_123","doi-asserted-by":"crossref","first-page":"2116","DOI":"10.1109\/TED.2021.3061523","article-title":"All-Electrical Control of Scaled Spin Logic Devices Based on Domain Wall Motion","volume":"68","author":"Raymenants","year":"2021","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_124","doi-asserted-by":"crossref","first-page":"024050","DOI":"10.1103\/PhysRevApplied.21.024050","article-title":"Magnetization-switching dynamics driven by chiral coupling","volume":"21","author":"Vermeulen","year":"2024","journal-title":"Phys. Rev. Appl."},{"key":"ref_125","doi-asserted-by":"crossref","first-page":"1128","DOI":"10.1109\/LED.2011.2156379","article-title":"Proposal of a Spin Torque Majority Gate Logic","volume":"32","author":"Nikonov","year":"2011","journal-title":"IEEE Electron Device Lett."},{"key":"ref_126","doi-asserted-by":"crossref","first-page":"065304","DOI":"10.1063\/1.4953672","article-title":"Toward error-free scaled spin torque majority gates","volume":"6","author":"Vaysset","year":"2016","journal-title":"AIP Adv."},{"key":"ref_127","doi-asserted-by":"crossref","first-page":"043902","DOI":"10.1063\/1.4974472","article-title":"Operating conditions and stability of spin torque majority gates: Analytical understanding and numerical evidence","volume":"121","author":"Vaysset","year":"2017","journal-title":"J. Appl. Phys."},{"key":"ref_128","doi-asserted-by":"crossref","unstructured":"Nikonov, D.E., Bourianoff, G.I., and Ghani, T. (2011, January 15\u201318). Nanomagnetic circuits with spin torque majority gates. Proceedings of the 2011 11th IEEE International Conference on Nanotechnology, Portland, OR, USA.","DOI":"10.1109\/NANO.2011.6144490"}],"container-title":["Micromachines"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/2072-666X\/15\/6\/696\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,10]],"date-time":"2025-10-10T14:48:29Z","timestamp":1760107709000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/2072-666X\/15\/6\/696"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,5,24]]},"references-count":128,"journal-issue":{"issue":"6","published-online":{"date-parts":[[2024,6]]}},"alternative-id":["mi15060696"],"URL":"https:\/\/doi.org\/10.3390\/mi15060696","relation":{},"ISSN":["2072-666X"],"issn-type":[{"value":"2072-666X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2024,5,24]]}}}