{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,19]],"date-time":"2026-06-19T07:02:57Z","timestamp":1781852577528,"version":"3.54.5"},"reference-count":42,"publisher":"MDPI AG","issue":"12","license":[{"start":{"date-parts":[[2024,11,28]],"date-time":"2024-11-28T00:00:00Z","timestamp":1732752000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"China National Key R&amp;D Program \u201cSmart Sensors\u201d Special Project","award":["2021YFB3202500"],"award-info":[{"award-number":["2021YFB3202500"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Micromachines"],"abstract":"<jats:p>Integrating nanocrystalline diamond (NCD) films on silicon chips has great practical significance and many potential applications, including high-power electronic devices, microelectromechanical systems, optoelectronic devices, and biosensors. In this study, we provide a solution for ensuring heterogeneous interface integration between silicon (Si) chips and NCD films using low-temperature bonding technology. This paper details the design and implementation of a magnetron sputtering layer on an NCD surface, as well as the materials and process for the connection layer of the integrated interface. The obtained NCD\/Ti\/Cu composite layer shows uniform island-like Cu nanostructures with 100~200 nm diameters, which could promote bonding between NCD and Si chips. Ultimately, a heterogeneous interface preparation of Si\/Ag\/Cu\/Ti\/NCD was achieved, with the integration temperature not exceeding 250 \u00b0C. The TEM analysis shows the closely packed atomic interface of the Cu NPs and deposited Ti\/Cu layers, revealing the bonding mechanism.<\/jats:p>","DOI":"10.3390\/mi15121436","type":"journal-article","created":{"date-parts":[[2024,11,28]],"date-time":"2024-11-28T07:28:01Z","timestamp":1732778881000},"page":"1436","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["Low-Temperature Bonding for Heterogeneous Integration of Silicon Chips with Nanocrystalline Diamond Films"],"prefix":"10.3390","volume":"15","author":[{"given":"Jicun","family":"Lu","sequence":"first","affiliation":[{"name":"Guanghua Lingang Engineering Application Technology Research and Development (Shanghai) Co., Ltd., Shanghai 201306, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaochun","family":"Lv","sequence":"additional","affiliation":[{"name":"School of Materials Science and Chemical Engineering, Harbin University of Science and Technology, Harbin 150080, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chenghao","family":"Zhang","sequence":"additional","affiliation":[{"name":"School of Materials Science and Chemical Engineering, Harbin University of Science and Technology, Harbin 150080, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chuting","family":"Zhang","sequence":"additional","affiliation":[{"name":"Guanghua Lingang Engineering Application Technology Research and Development (Shanghai) Co., Ltd., Shanghai 201306, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yang","family":"Liu","sequence":"additional","affiliation":[{"name":"School of Materials Science and Chemical Engineering, Harbin University of Science and Technology, Harbin 150080, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2024,11,28]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"4459","DOI":"10.1038\/s41467-023-40194-0","article-title":"An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics","volume":"14","author":"Zhou","year":"2023","journal-title":"Nat. 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