{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,12]],"date-time":"2025-12-12T13:50:40Z","timestamp":1765547440368,"version":"build-2065373602"},"reference-count":28,"publisher":"MDPI AG","issue":"7","license":[{"start":{"date-parts":[[2025,6,25]],"date-time":"2025-06-25T00:00:00Z","timestamp":1750809600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"2022 Shanxi Provincial Major Science and Technology Special Project","award":["202201030201009","20240120"],"award-info":[{"award-number":["202201030201009","20240120"]}]},{"name":"Jincheng Key Research and Development Program (High-tech Field) Project","award":["202201030201009","20240120"],"award-info":[{"award-number":["202201030201009","20240120"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Micromachines"],"abstract":"<jats:p>High-power laser diodes (HPLDs) are increasingly used in space applications, yet solder layer (SL) reliability critically limits their performance and lifespan. This study employs finite element analysis to evaluate SL failure mechanisms in microchannel-cooled HPLDs with two packaging configurations under thermal cycling and vibration. Based on the Anand constitutive model, contour plot analysis revealed that the critical stress\u2013strain regions in both SLs were located at their edges. The stress\u2013strain values along the X-axis of the SLs exceeded those in other axial directions, and SL failure would preferentially initiate from the edges along the cavity length direction. During random vibration analysis with excitation applied along the Z-axis, the equivalent stresses in both SLs exceeded X-\/Y-axis levels. However, these values remained far below their yield strengths, indicating that only elastic strain and high-cycle fatigue occurred in the SLs. The calculated thermal fatigue lives of the two SLs were 2851 cycles and 5730 cycles, respectively. Their random vibration fatigue lives were determined as 5.75 \u00d7 107 h and 8.31 \u00d7 107 h. Using damage superposition under combined thermal-vibration loading, the total fatigue lives were predicted as 14,821 h and 29,786 h, respectively, with thermal cycling-induced damage dominating the failure mechanism.<\/jats:p>","DOI":"10.3390\/mi16070746","type":"journal-article","created":{"date-parts":[[2025,6,27]],"date-time":"2025-06-27T05:29:58Z","timestamp":1751002198000},"page":"746","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Numerical Simulation of Thermal Cycling and Vibration Effects on Solder Layer Reliability in High-Power Diode Lasers for Space Applications"],"prefix":"10.3390","volume":"16","author":[{"given":"Lei","family":"Cheng","sequence":"first","affiliation":[{"name":"College of Mechanical and Control Engineering, Guilin University of Technology, Guilin 541000, China"},{"name":"Jincheng Research Institute of Opto-Mechatronics Industry, Jincheng 048000, China"},{"name":"Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated Systems, Jincheng 048000, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Huaqing","family":"Sun","sequence":"additional","affiliation":[{"name":"College of Mechanical and Control Engineering, Guilin University of Technology, Guilin 541000, China"},{"name":"Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated Systems, Jincheng 048000, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xuanjun","family":"Dai","sequence":"additional","affiliation":[{"name":"College of Mechanical and Control Engineering, Guilin University of Technology, Guilin 541000, China"},{"name":"Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated Systems, Jincheng 048000, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bingxing","family":"Wei","sequence":"additional","affiliation":[{"name":"College of Mechanical and Control Engineering, Guilin University of Technology, Guilin 541000, China"},{"name":"Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated Systems, Jincheng 048000, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2025,6,25]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"186","DOI":"10.1103\/PhysRevLett.9.366","article-title":"Coherent Light Emission from GaAs Junctions","volume":"9","author":"Hall","year":"1962","journal-title":"Phys. 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