{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,10]],"date-time":"2026-09-10T00:01:59Z","timestamp":1788998519882,"version":"build-2803163510"},"reference-count":36,"publisher":"MDPI AG","issue":"10","license":[{"start":{"date-parts":[[2025,9,29]],"date-time":"2025-09-29T00:00:00Z","timestamp":1759104000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100002858","name":"China Postdoctoral Science Foundation","doi-asserted-by":"publisher","award":["2025M770574"],"award-info":[{"award-number":["2025M770574"]}],"id":[{"id":"10.13039\/501100002858","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["U2241221"],"award-info":[{"award-number":["U2241221"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"name":"National Key Laboratory of Airborne Information Perception and Fusion and the Aeronautical Science Foundation","award":["20230001081024"],"award-info":[{"award-number":["20230001081024"]}]}],"content-domain":{"domain":["www.mdpi.com"],"crossmark-restriction":true},"short-container-title":["Micromachines"],"abstract":"<jats:p>Due to their high carrier mobility, thermal conductivity, and exceptional foldability, transition metal dichalcogenides (TMDs) present promising prospects in the realm of flexible semiconductor devices. Concurrently, tunneling field-effect transistors (TFETs) have garnered significant attention owing to their low energy consumption. This study investigates a TMD van der Waals heterojunction (VdWH) TFET, specifically by fabricating MoS2 field-effect transistors (FETs), WSe2 FETs, and MoS2\/WSe2 VdWH TFETs. The N-type characteristics of the MoS2 and P-type characteristics of WSe2 are established through an analysis of the electrical characteristics of the respective FETs. Finally, we analyze the energy band and electrical characteristics of the MoS2\/WSe2 VdWH TFET, which exhibits a drain current switching ratio of 105. This study provides valuable insights for the development of novel low-power devices.<\/jats:p>","DOI":"10.3390\/mi16101108","type":"journal-article","created":{"date-parts":[[2025,9,29]],"date-time":"2025-09-29T08:00:32Z","timestamp":1759132832000},"page":"1108","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Preparation and Performance Exploration of MoS2\/WSe2 Van Der Waals Heterojunction Tunneling Field-Effect Transistor"],"prefix":"10.3390","volume":"16","author":[{"given":"Chen","family":"Chong","sequence":"first","affiliation":[{"name":"Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi\u2019an 710071, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4547-0666","authenticated-orcid":false,"given":"Hongxia","family":"Liu","sequence":"additional","affiliation":[{"name":"Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi\u2019an 710071, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8560-2478","authenticated-orcid":false,"given":"Shulong","family":"Wang","sequence":"additional","affiliation":[{"name":"Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi\u2019an 710071, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shupeng","family":"Chen","sequence":"additional","affiliation":[{"name":"Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi\u2019an 710071, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4680-9094","authenticated-orcid":false,"given":"Cong","family":"Yan","sequence":"additional","affiliation":[{"name":"Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi\u2019an 710071, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2025,9,29]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"2057","DOI":"10.1126\/science.1100731","article-title":"Silicon device scaling to the sub-10-nm regime","volume":"306","author":"Ieong","year":"2004","journal-title":"Science"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"28","DOI":"10.1109\/TED.2014.2368395","article-title":"Accurate Boundary Condition for Short-Channel Effect Compact Modeling in MOS Devices","volume":"62","author":"Hiblot","year":"2015","journal-title":"IEEE Trans. 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