{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,24]],"date-time":"2026-10-24T17:46:06Z","timestamp":1792863966522,"version":"4.5.0"},"reference-count":19,"publisher":"MDPI AG","issue":"10","license":[{"start":{"date-parts":[[2025,10,13]],"date-time":"2025-10-13T00:00:00Z","timestamp":1760313600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"joint research and development of the Yangtze River Delta Science and Technology Innovation Community","award":["2023CSJGG0300"],"award-info":[{"award-number":["2023CSJGG0300"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Micromachines"],"abstract":"<jats:p>As an emerging type of non-volatile memory, magneto-resistive random access memory (MRAM) stands out for its exceptional reliability and rapid read\u2013write speeds, thereby garnering considerable attention within the industry. The memory cell architecture of MRAM is centered around the magnetic tunnel junction (MTJ), which, however, is prone to interference from external magnetic fields\u2014a limitation that restricts its application in demanding environments. To address this challenge, we propose an innovative open magnetic shielding structure. This design demonstrates remarkable shielding efficacy against both in-plane and perpendicular magnetic fields, effectively catering to the magnetic shielding demands of both spin-transfer torque (STT) and spin\u2013orbit torque (SOT) MRAM. Finite element magnetic simulations reveal that when subjected to an in-plane magnetic field of 40 mT, the magnetic field intensity at the chip level is reduced to nearly 1\u2030 of its original value. Similarly, under a perpendicular magnetic field of 40 mT, the magnetic field at the chip is reduced to 2\u2030 of its initial strength. Such reductions significantly enhance the anti-magnetic capabilities of MRAM. Moreover, the magnetic shielding performance remains unaffected by the height of the packaging structure, ensuring compatibility with various chip stack packaging requirements across different layers. The research presented in this paper holds immense significance for the realization of highly reliable magnetic shielding packaging solutions for MRAM.<\/jats:p>","DOI":"10.3390\/mi16101157","type":"journal-article","created":{"date-parts":[[2025,10,13]],"date-time":"2025-10-13T08:10:31Z","timestamp":1760343031000},"page":"1157","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Research on Open Magnetic Shielding Packaging for STT and SOT-MRAM"],"prefix":"10.3390","volume":"16","author":[{"given":"Haibo","family":"Ye","sequence":"first","affiliation":[{"name":"The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214000, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaofei","family":"Zhang","sequence":"additional","affiliation":[{"name":"National Innovation Institute of Defense Technology, Beijing 100071, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Nannan","family":"Lu","sequence":"additional","affiliation":[{"name":"The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214000, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jiawei","family":"Li","sequence":"additional","affiliation":[{"name":"The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214000, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jun","family":"Jia","sequence":"additional","affiliation":[{"name":"The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214000, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Guilin","family":"Zhao","sequence":"additional","affiliation":[{"name":"The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214000, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jiejie","family":"Sun","sequence":"additional","affiliation":[{"name":"The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214000, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Lei","family":"Zhang","sequence":"additional","affiliation":[{"name":"The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214000, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chao","family":"Wang","sequence":"additional","affiliation":[{"name":"The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214000, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2025,10,13]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"1407","DOI":"10.1109\/TED.2020.2965403","article-title":"Magnetoresistive Random Access Memory: Present and Future","volume":"67","author":"Ikegawa","year":"2020","journal-title":"IEEE Trans. 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