{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,8]],"date-time":"2026-06-08T22:16:33Z","timestamp":1780956993889,"version":"3.54.1"},"reference-count":32,"publisher":"MDPI AG","issue":"11","license":[{"start":{"date-parts":[[2025,10,23]],"date-time":"2025-10-23T00:00:00Z","timestamp":1761177600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"Scientific Research Foundation of the University of Chinese Academy of Sciences","award":["118900M032"],"award-info":[{"award-number":["118900M032"]}]},{"name":"China Fundamental Research Funds for the Central Universities","award":["E5423802"],"award-info":[{"award-number":["E5423802"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Micromachines"],"abstract":"<jats:p>Immersion deep ultraviolet (DUV) lithography remains an indispensable core technology in advanced integrated circuit manufacturing, particularly when combined with multiple patterning techniques to achieve sub-10 nm feature patterning. However, at advanced technology nodes, dynamic instabilities of DUV light sources\u2014including spectral characteristics (bandwidth fluctuations, and center wavelength drift), coherence variations, and pulse-to-pulse energy instability\u2014can adversely affect imaging contrast, normalized image log-slope (NILS), and critical dimension (CD) uniformity. To quantitatively assess the impact of laser parameter fluctuations on NILS and CD, this work establishes systematic physical models for imaging perturbations caused by multi-parameter laser output instabilities under immersion DUV lithography. Through simulations, we evaluate the influence of laser parameter variations on the imaging fidelity of representative line\/space (L\/S) and tip-to-line (T2L) structures, thereby validating the proposed perturbation model. Research demonstrates that the spectral attributes (bandwidth fluctuation and center wavelength drift), coherence variations, and pulse energy instability collectively induce non-uniform electric field intensity distribution within photoresist, degrading NILS, and amplifying CD variation, which ultimately compromise pattern fidelity and chip yield. Notably, at advanced nodes, pulse energy fluctuation exerts a significantly greater influence on imaging errors compared to bandwidth and wavelength variations. To satisfy the 10% process window requirement for 45 nm linewidths, pulse energy fluctuations should be rigorously confined within 1%. This research provides theoretical foundations and practical insights for the design of dynamic stability control of light source and process optimization of next-generation DUV light sources.<\/jats:p>","DOI":"10.3390\/mi16111207","type":"journal-article","created":{"date-parts":[[2025,10,24]],"date-time":"2025-10-24T00:47:36Z","timestamp":1761266856000},"page":"1207","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Analysis of Dynamic Stability Control of Light Source in Immersion DUV Lithography"],"prefix":"10.3390","volume":"16","author":[{"given":"Yihua","family":"Zhu","sequence":"first","affiliation":[{"name":"School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 101408, China"},{"name":"Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6560-3887","authenticated-orcid":false,"given":"Dandan","family":"Han","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 101408, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chuang","family":"Wu","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 101408, China"},{"name":"Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sen","family":"Deng","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 101408, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yayi","family":"Wei","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 101408, China"},{"name":"Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2025,10,23]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Van Den Brink, M., Yen, A., Van Wijnen, P., Lercel, M., and Sluijk, B. 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