{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,18]],"date-time":"2026-06-18T16:02:06Z","timestamp":1781798526434,"version":"3.54.5"},"reference-count":27,"publisher":"MDPI AG","issue":"12","license":[{"start":{"date-parts":[[2025,11,22]],"date-time":"2025-11-22T00:00:00Z","timestamp":1763769600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100003816","name":"Huawei Technologies","doi-asserted-by":"publisher","award":["N\/A"],"award-info":[{"award-number":["N\/A"]}],"id":[{"id":"10.13039\/501100003816","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Micromachines"],"abstract":"<jats:p>Inorganic gap filling technology is an effective method to improve reliability and heterogeneous integration density in 2.5D and 3D integration. It uses plasma-enhanced chemical vapor deposition (PECVD) to deposit silicon dioxide (SiO2) filler layers in gaps between chiplets. This technology is used to replace the Epoxy Mold Compound (EMC) commonly used in traditional packaging. However, as an inorganic filling material, SiO2 poses reliability challenges such as cracking and peeling during or after deposition. Furthermore, there lacks quantitative characterization and modeling of the microscale mechanical properties, thermal stress distribution, and fracture failure risk in the filler layer. By combining nanoindentation technology with three-point bending tests, this study reports a comprehensive characterization route for quantitative characterization of mechanical behavior of the filler. A finite element method (FEM) model was also established to predict the thermomechanical reliability of the gap filling process. Raman spectroscopy measured data confirm the model\u2019s reliable predictive ability. The results reveal the impact of filler thickness on the stress. The microscale SiO2 mechanical characterization method and the thermal stress and fracture risk FEM prediction model in this study not only address the limitations of traditional testing and simulation but also provide support for process optimization and structural design of gap filling in high-density 2.5D\/3D packaging. This work promotes the understanding of inorganic filling process reliability in chiplet integration.<\/jats:p>","DOI":"10.3390\/mi16121310","type":"journal-article","created":{"date-parts":[[2025,11,24]],"date-time":"2025-11-24T09:02:07Z","timestamp":1763974927000},"page":"1310","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Study on Stress Distribution and Its Impact on Reliability of SiO2-Based Inorganic Chiplet Gap Filling"],"prefix":"10.3390","volume":"16","author":[{"given":"Ziyang","family":"Ding","sequence":"first","affiliation":[{"name":"School of Integrated Circuits, Southeast University, Wuxi 214000, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shaowei","family":"Liu","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Southeast University, Wuxi 214000, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0452-4851","authenticated-orcid":false,"given":"Chen","family":"Lin","sequence":"additional","affiliation":[{"name":"Huawei Technologies Co., Ltd., Shenzhen 518129, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tianze","family":"Zheng","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Southeast University, Wuxi 214000, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Lihui","family":"Xu","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Southeast University, Wuxi 214000, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Qiuhan","family":"Hu","sequence":"additional","affiliation":[{"name":"School of Advanced Technology, Xi\u2019an Jiaotong-Liverpool University, Suzhou 215123, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tailong","family":"Shi","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Southeast University, Wuxi 214000, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2154-1036","authenticated-orcid":false,"given":"Liyi","family":"Li","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Southeast University, Wuxi 214000, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2025,11,22]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Elsherbini, A., Jun, K., Liff, S., Talukdar, T., Bielefeld, J., Li, W., Vreeland, R., Niazi, H., Rawlings, B., and Ajayi, T. 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