{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,4]],"date-time":"2026-09-04T14:27:14Z","timestamp":1788532034446,"version":"build-2803163510"},"reference-count":15,"publisher":"MDPI AG","issue":"8","license":[{"start":{"date-parts":[[2026,7,26]],"date-time":"2026-07-26T00:00:00Z","timestamp":1785024000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"State Key Laboratory Fund","award":["HTKJ2024KL510009"],"award-info":[{"award-number":["HTKJ2024KL510009"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Micromachines"],"abstract":"<jats:p>Single-event burnout (SEB) remains a persistent threat to SiC power MOSFETs in space, yet rapid evaluation of SEB susceptibility without costly heavy-ion campaigns is challenging. This work demonstrates that femtosecond laser two-photon absorption (TPA) can fill that role for a commercial 1200 V SiC MOSFET\u2014provided the laser energy is correctly mapped to heavy-ion linear energy transfer (LET). We derive an equivalent LET model that incorporates the thermal spike effect, giving LET_eq = \u03931E02 + \u03932E04, which corrects the classical square law at high excitation intensities where it fails. Three ionization-driven failure signatures emerge: drain-to-gate and drain-to-source single-event leakage current (SELC), and SEB. The SEB threshold saturates near 500 V once LET exceeds 25 MeV\u00b7cm2\/mg\u2014roughly 42% of the device\u2019s 1200 V rating. From these thresholds, we define a safe operating area: below 200 V is safe, 200\u2013600 V risks SELC degradation, and above 600 V carries high SEB risk. Benchmarking against published heavy-ion data shows SEB threshold agreement within 15%, and within 5% at high LET. We stress that the TPA method captures ionization-driven effects only; it does not replicate displacement damage. These results support rapid, laser-based screening of SiC power devices for radiation hardness.<\/jats:p>","DOI":"10.3390\/mi17080894","type":"journal-article","created":{"date-parts":[[2026,7,27]],"date-time":"2026-07-27T16:11:56Z","timestamp":1785168716000},"page":"894","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Femtosecond Laser Two-Photon Absorption for Simulating Single-Event Effects and Defining the Safe Operating Area of SiC Power MOSFETs"],"prefix":"10.3390","volume":"17","author":[{"given":"Chenguang","family":"Zhang","sequence":"first","affiliation":[{"name":"National Key Laboratory on Vacuum Technology and Physics, Lanzhou Institute of Physics, Lanzhou 730000, China"}],"role":[{"vocabulary":"crossref","role":"author"},{"role":"writing-original-draft","vocabulary":"credit"},{"role":"funding-acquisition","vocabulary":"credit"}]},{"ORCID":"https:\/\/orcid.org\/0009-0005-3577-0931","authenticated-orcid":false,"given":"Hong","family":"Yin","sequence":"additional","affiliation":[{"name":"National Key Laboratory on Vacuum Technology and Physics, Lanzhou Institute of Physics, Lanzhou 730000, China"}],"role":[{"vocabulary":"crossref","role":"author"},{"role":"methodology","vocabulary":"credit"},{"role":"writing-review-editing","vocabulary":"credit"}]},{"given":"Liang","family":"Shi","sequence":"additional","affiliation":[{"name":"National Key Laboratory on Vacuum Technology and Physics, Lanzhou Institute of Physics, Lanzhou 730000, China"}],"role":[{"vocabulary":"crossref","role":"author"},{"role":"project-administration","vocabulary":"credit"},{"role":"funding-acquisition","vocabulary":"credit"}]},{"given":"Xuan","family":"Wen","sequence":"additional","affiliation":[{"name":"National Key Laboratory on Vacuum Technology and Physics, Lanzhou Institute of Physics, Lanzhou 730000, China"}],"role":[{"vocabulary":"crossref","role":"author"},{"role":"data-curation","vocabulary":"credit"},{"role":"formal-analysis","vocabulary":"credit"}]},{"given":"Zheng","family":"Ma","sequence":"additional","affiliation":[{"name":"National Key Laboratory on Vacuum Technology and Physics, Lanzhou Institute of Physics, Lanzhou 730000, China"}],"role":[{"vocabulary":"crossref","role":"author"},{"role":"visualization","vocabulary":"credit"}]},{"given":"Hanwu","family":"Jia","sequence":"additional","affiliation":[{"name":"National Key Laboratory on Vacuum Technology and Physics, Lanzhou Institute of Physics, Lanzhou 730000, China"}],"role":[{"vocabulary":"crossref","role":"author"},{"role":"investigation","vocabulary":"credit"}]}],"member":"1968","published-online":{"date-parts":[[2026,7,26]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"22","DOI":"10.1109\/TNS.2019.2955922","article-title":"Ion-induced energy pulse mechanism for single-event burnout in high-voltage SiC power MOSFETs and junction barrier Schottky diodes","volume":"67","author":"Ball","year":"2020","journal-title":"IEEE Trans. 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Sci."}],"container-title":["Micromachines"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/2072-666X\/17\/8\/894\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,9,4]],"date-time":"2026-09-04T14:01:30Z","timestamp":1788530490000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/2072-666X\/17\/8\/894"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,7,26]]},"references-count":15,"journal-issue":{"issue":"8","published-online":{"date-parts":[[2026,8]]}},"alternative-id":["mi17080894"],"URL":"https:\/\/doi.org\/10.3390\/mi17080894","relation":{},"ISSN":["2072-666X"],"issn-type":[{"value":"2072-666X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,7,26]]}}}