{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,30]],"date-time":"2026-09-30T20:00:29Z","timestamp":1790798429951,"version":"4.1.0"},"reference-count":34,"publisher":"MDPI AG","issue":"8","license":[{"start":{"date-parts":[[2026,7,27]],"date-time":"2026-07-27T00:00:00Z","timestamp":1785110400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"Key Research and Development Program Project of Shanxi province","award":["202502010201032"],"award-info":[{"award-number":["202502010201032"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Micromachines"],"abstract":"<jats:p>High-g accelerometers are in high demand across sectors such as aerospace, defense, and industrial inspection. This paper presents a MEMS accelerometer based on graphene piezoresistors, designed for precise acceleration measurement under sudden impacts, intense vibrations, and extreme conditions, such as engine fault diagnosis and weapon impact testing. A step-by-step structural optimization and simulation analysis were conducted using finite-element simulation. Taking the peak strain at the beam root, the first-order natural frequency, and the maximum equivalent stress as optimization objectives, progressive parametric optimization was sequentially performed on four progressive architectures: a simple beam, a beam mass, a beam mass with stress concentration grooves, and a beam mass with stress concentration grooves and symmetric masses. The results indicate that the introduction of a central mass enhances the peak strain by more than 15 times compared to the simple beam. The addition of stress concentration grooves further increases the strain by approximately 30%. Finally, the incorporation of symmetric masses yields a further 9% strain enhancement while reducing cross-axis sensitivity by 5.6%, effectively suppressing off-axis interference. The final structure achieves maximized strain while maintaining a first-order natural frequency above 200 kHz, with the maximum equivalent stress staying within the allowable limit. This optimal comprehensive performance provides essential technical support for high-performance graphene-based accelerometers. In addition to the mechanical structural optimization, the graphene piezoresistors were treated as surface sensing regions at the beam-root locations, and the area-averaged longitudinal strain was extracted as the input of a piezoresistive transduction model. The simulated strain was converted to resistance variation and bridge output voltage using a graphene gauge-factor-based readout model incorporating contact-resistance effects, thereby providing a sensor-level electromechanical performance estimation for the proposed high-g accelerometer.<\/jats:p>","DOI":"10.3390\/mi17080899","type":"journal-article","created":{"date-parts":[[2026,7,27]],"date-time":"2026-07-27T16:11:56Z","timestamp":1785168716000},"page":"899","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Design and Optimization of High-G Graphene MEMS Acceleration Sensor"],"prefix":"10.3390","volume":"17","author":[{"given":"Shengsheng","family":"Wei","sequence":"first","affiliation":[{"name":"Shanxi Key Laboratory of Graphene Sensing Materials and Devices, North University of China, Taiyuan 030051, China"},{"name":"School of Semiconductors and Physics, North University of China, Taiyuan 030051, China"},{"name":"Academy for Advanced Interdisciplinary Research, North University of China, Taiyuan 030051, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yina","family":"He","sequence":"additional","affiliation":[{"name":"Sichuan Gas Turbine Establishment, Aero Engine Corporation of China, Chengdu 610500, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yipeng","family":"Wang","sequence":"additional","affiliation":[{"name":"Shanxi Key Laboratory of Graphene Sensing Materials and Devices, North University of China, Taiyuan 030051, China"},{"name":"School of Semiconductors and Physics, North University of China, Taiyuan 030051, China"},{"name":"School of Instrument and Electronics, North University of China, Taiyuan 030051, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6495-0783","authenticated-orcid":false,"given":"Junqiang","family":"Wang","sequence":"additional","affiliation":[{"name":"Shanxi Key Laboratory of Graphene Sensing Materials and Devices, North University of China, Taiyuan 030051, China"},{"name":"School of Semiconductors and Physics, North University of China, Taiyuan 030051, China"},{"name":"School of Instrument and Electronics, North University of China, Taiyuan 030051, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Mengwei","family":"Li","sequence":"additional","affiliation":[{"name":"Shanxi Key Laboratory of Graphene Sensing Materials and Devices, North University of China, Taiyuan 030051, China"},{"name":"School of Semiconductors and Physics, North University of China, Taiyuan 030051, China"},{"name":"School of Instrument and Electronics, North University of China, Taiyuan 030051, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2026,7,27]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"012037","DOI":"10.1088\/1742-6596\/2355\/1\/012037","article-title":"A MEMS high-g acceleration sensor simulation analysis","volume":"2355","author":"Yang","year":"2022","journal-title":"J. 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