{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,24]],"date-time":"2026-08-24T18:20:34Z","timestamp":1787595634924,"version":"build-2736575974"},"reference-count":26,"publisher":"MDPI AG","issue":"9","license":[{"start":{"date-parts":[[2026,8,23]],"date-time":"2026-08-23T00:00:00Z","timestamp":1787443200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100007129","name":"Shandong Provincial Natural Science Foundation","doi-asserted-by":"publisher","award":["ZR2026LWN005"],"award-info":[{"award-number":["ZR2026LWN005"]}],"id":[{"id":"10.13039\/501100007129","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100007129","name":"Shandong Provincial Natural Science Foundation","doi-asserted-by":"publisher","award":["ZR2026LWN004"],"award-info":[{"award-number":["ZR2026LWN004"]}],"id":[{"id":"10.13039\/501100007129","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100007129","name":"Shandong Provincial Natural Science Foundation","doi-asserted-by":"publisher","award":["ZR2026LWN008"],"award-info":[{"award-number":["ZR2026LWN008"]}],"id":[{"id":"10.13039\/501100007129","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Micromachines"],"abstract":"<jats:p>To address the limitations of traditional trench electrode silicon detectors, such as charge collection dead zones and non-uniform electric fields, this paper proposes a novel 3D silicon detector based on an interleaved trench electrode structure. By constructing interleaved N-type and P-type heavily doped trenches on a lightly doped N-type substrate, enhanced uniformity and depth profile optimization of the electric field distribution are achieved. Moreover, 3D numerical simulations based on TCAD demonstrate that the proposed structure provides a uniform, planar-like electric field distribution; reduces low-field regions; and enables fast carrier collection with a low full-depletion voltage. The results provide a theoretical basis and design reference for the development of novel 3D radiation detectors with low depletion voltages, fast charge collection, and favorable radiation response characteristics.<\/jats:p>","DOI":"10.3390\/mi17090993","type":"journal-article","created":{"date-parts":[[2026,8,24]],"date-time":"2026-08-24T17:20:28Z","timestamp":1787592028000},"page":"993","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Design and Electrical Performance Simulation of a Novel 3D Silicon Detector with Interleaved Trench Electrodes"],"prefix":"10.3390","volume":"17","author":[{"given":"Xuyang","family":"Song","sequence":"first","affiliation":[{"name":"Shandong Provincial Engineering Research Center for Optoelectronic Sensing Materials and Device Micro-Nano Manufacturing, School of Integrated Circuits, Ludong University, Yantai 264025, China"},{"name":"Engineering Research Center of Photo Detector Special Chip in Universities of Shandong, Ludong University, Yantai 264025, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0006-4026-8425","authenticated-orcid":false,"given":"Tao","family":"Long","sequence":"additional","affiliation":[{"name":"Shandong Provincial Engineering Research Center for Optoelectronic Sensing Materials and Device Micro-Nano Manufacturing, School of Integrated Circuits, Ludong University, Yantai 264025, China"},{"name":"Engineering Research Center of Photo Detector Special Chip in Universities of Shandong, Ludong University, Yantai 264025, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0008-1905-2253","authenticated-orcid":false,"given":"Jun","family":"Zhao","sequence":"additional","affiliation":[{"name":"Shandong Provincial Engineering Research Center for Optoelectronic Sensing Materials and Device Micro-Nano Manufacturing, School of Integrated Circuits, Ludong 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China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7654-8548","authenticated-orcid":false,"given":"Manwen","family":"Liu","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kun","family":"Wang","sequence":"additional","affiliation":[{"name":"Shandong Provincial Engineering Research Center for Optoelectronic Sensing Materials and Device Micro-Nano Manufacturing, School of Integrated Circuits, Ludong University, Yantai 264025, China"},{"name":"Engineering Research Center of Photo Detector Special Chip in Universities of Shandong, Ludong University, Yantai 264025, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jiahao","family":"Fu","sequence":"additional","affiliation":[{"name":"Shandong Provincial Engineering Research Center for Optoelectronic Sensing Materials and Device 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