{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,24]],"date-time":"2026-08-24T18:21:06Z","timestamp":1787595666290,"version":"build-2736575974"},"reference-count":25,"publisher":"MDPI AG","issue":"9","license":[{"start":{"date-parts":[[2026,8,24]],"date-time":"2026-08-24T00:00:00Z","timestamp":1787529600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"Major Project of Chongqing Technology Innovation and Application Development Special Project","award":["CSTB2023TIAD-STX0014"],"award-info":[{"award-number":["CSTB2023TIAD-STX0014"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Micromachines"],"abstract":"<jats:p>To address trench-bottom electric-field concentration and the limited BV\u2013Ron,sp trade-off of the conventional shielded-gate trench MOSFET (Conventional SGT), a floating-P-island-assisted silicon SGT MOSFET is proposed. Sentaurus TCAD is used to investigate the effects of increasing the number of floating P-islands from 0 to 3 on BV, Ron,sp, FOM, and electric-field distribution. Within this range, the three-floating-P-island device (3FPI-SGT) provides a favorable BV\u2013Ron,sp trade-off; its drift-region doping matching, dynamic characteristics, and parameter sensitivity are further analyzed. Local depletion around multiple vertically discrete P-islands generates secondary electric-field peaks that share the potential drop with the main trench-bottom peak, reducing field crowding and improving voltage utilization of the drift region. After optimization, the maximum BV and FOM reach 177.7 V and 11.48 MW\u00b7cm\u22122, respectively. At an identical Ron,sp of 2.62 m\u03a9\u00b7cm2, BV increases by 54.6%. At VDS = 80 V, Coss and Crss decrease by approximately 12.8% and 12.5%, while total switching energy increases by only approximately 2.5%. A clear BV advantage is retained under \u00b120% single-factor deviations in key P-island parameters. Thus, the proposed structure significantly improves the silicon SGT MOSFET BV\u2013Ron,sp trade-off with a limited dynamic-performance penalty.<\/jats:p>","DOI":"10.3390\/mi17090999","type":"journal-article","created":{"date-parts":[[2026,8,24]],"date-time":"2026-08-24T17:20:28Z","timestamp":1787592028000},"page":"999","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["BV\u2013Ron,sp Trade-Off Optimization in a Floating-P-Island-Assisted Silicon Shielded-Gate Trench MOSFET"],"prefix":"10.3390","volume":"17","author":[{"given":"Zequ","family":"Han","sequence":"first","affiliation":[{"name":"School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 401331, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Juan","family":"Luo","sequence":"additional","affiliation":[{"name":"School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 401331, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0009-0049-5246","authenticated-orcid":false,"given":"Yunhao","family":"Deng","sequence":"additional","affiliation":[{"name":"School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 401331, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2071-9966","authenticated-orcid":false,"given":"Zhi","family":"Lin","sequence":"additional","affiliation":[{"name":"School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 401331, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yifei","family":"Duan","sequence":"additional","affiliation":[{"name":"School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 401331, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shengdong","family":"Hu","sequence":"additional","affiliation":[{"name":"School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 401331, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2026,8,24]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"674","DOI":"10.1109\/TED.2017.2653239","article-title":"The trench power MOSFET: Part I\u2014History, technology, and prospects","volume":"64","author":"Williams","year":"2017","journal-title":"IEEE Trans. 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