{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,19]],"date-time":"2026-10-19T16:59:49Z","timestamp":1792429189508,"version":"4.5.0"},"reference-count":66,"publisher":"MDPI AG","issue":"15","license":[{"start":{"date-parts":[[2019,7,31]],"date-time":"2019-07-31T00:00:00Z","timestamp":1564531200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001665","name":"Agence Nationale de la Recherche","doi-asserted-by":"publisher","award":["ANR-15- CE05- 356 0019"],"award-info":[{"award-number":["ANR-15- CE05- 356 0019"]}],"id":[{"id":"10.13039\/501100001665","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100010665","name":"H2020 Marie Sk\u0142odowska-Curie Actions","doi-asserted-by":"publisher","award":["EJD FunMat grant agreement No 641640."],"award-info":[{"award-number":["EJD FunMat grant agreement No 641640."]}],"id":[{"id":"10.13039\/100010665","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Molecules"],"abstract":"<jats:p>Aluminum-doped tin oxide (SnO     2    :Al) thin films were produced by an ultrasonic spray pyrolysis method. The effect of aluminum doping on structural, optical, and electrical properties of tin oxide thin films synthesized at 420      \u00b0    C was investigated. Al doping induced a change in the morphology of tin oxide films and yielded films with smaller grain size. SnO     2     thin films undergo a structural reordering and have a texture transition from (301) to (101), and then to (002) preferred cristallographic orientation upon Al doping. The lattice parameters (a and c) decreases with Al doping, following in a first approximation Vegard\u2019s law. The optical transmission does not change in the visible region with an average transmittance value of 72\u201381%. Conversely, in the near infrared (NIR) region, the plasmon frequency shifts towards the IR region upon increasing Al concentration in the grown films. Nominally undoped SnO     2     have a conductivity of \u223c1120 S\/cm, which is at least two orders of magnitude larger than what is reported in literature. This higher conductivity is attributed to the Cl     \u2212     ions in the SnCl     4    \u00b75(H     2    O) precursor, which would act as donor dopants. The introduction of Al into the SnO     2     lattice showed a decrease of the electrical conductivity of SnO     2     due to compensating hole generation. These findings will be useful for further studied tackling the tailoring of the properties of highly demanded fluorine doped tin oxide (FTO) films.<\/jats:p>","DOI":"10.3390\/molecules24152797","type":"journal-article","created":{"date-parts":[[2019,7,31]],"date-time":"2019-07-31T11:37:07Z","timestamp":1564573027000},"page":"2797","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":43,"title":["SnO2 Films Deposited by Ultrasonic Spray Pyrolysis: Influence of Al Incorporation on the Properties"],"prefix":"10.3390","volume":"24","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-8760-8155","authenticated-orcid":false,"given":"Getnet Kacha","family":"Deyu","sequence":"first","affiliation":[{"name":"Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, 38 000 Grenoble, France"},{"name":"Electronic Structure of Materials, Department of Materials and Earth Sciences, Technische Universit\u00e4t Darmstadt, Otto-Berndt-Stra\u00dfe 3, 64287 Darmstadt, Germany"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1234-0814","authenticated-orcid":false,"given":"David","family":"Mu\u00f1oz-Rojas","sequence":"additional","affiliation":[{"name":"Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, 38 000 Grenoble, France"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Laetitia","family":"Rapenne","sequence":"additional","affiliation":[{"name":"Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, 38 000 Grenoble, France"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4668-8501","authenticated-orcid":false,"given":"Jean-Luc","family":"Deschanvres","sequence":"additional","affiliation":[{"name":"Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, 38 000 Grenoble, France"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7463-1495","authenticated-orcid":false,"given":"Andreas","family":"Klein","sequence":"additional","affiliation":[{"name":"Electronic Structure of Materials, Department of Materials and Earth Sciences, Technische Universit\u00e4t Darmstadt, Otto-Berndt-Stra\u00dfe 3, 64287 Darmstadt, Germany"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9601-1825","authenticated-orcid":false,"given":"Carmen","family":"Jim\u00e9nez","sequence":"additional","affiliation":[{"name":"Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, 38 000 Grenoble, France"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9929-3696","authenticated-orcid":false,"given":"Daniel","family":"Bellet","sequence":"additional","affiliation":[{"name":"Univ. 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