{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,28]],"date-time":"2026-02-28T04:29:33Z","timestamp":1772252973890,"version":"3.50.1"},"reference-count":29,"publisher":"MDPI AG","issue":"21","license":[{"start":{"date-parts":[[2019,10,28]],"date-time":"2019-10-28T00:00:00Z","timestamp":1572220800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"National Science Council of the Republic of China","award":["MOST-107-2221-E-260-001-MY2"],"award-info":[{"award-number":["MOST-107-2221-E-260-001-MY2"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Molecules"],"abstract":"<jats:p>In our previous study, a novel barrier processing on a porous low-dielectric constant (low-k) film was developed: an ultrathin Mn oxide on a nitrogen-stuffed porous carbon-doped organosilica film (p-SiOCH(N)) as a barrier of the Cu film was fabricated. To form a better barrier Mn2O3\u2212xN film, additional annealing at 450 \u00b0C was implemented. In this study, the electrical characteristics and reliability of this integrated Cu\/Mn2O3\u2212xN\/p-SiOCH(N)\/Si structure were investigated. The proposed Cu\/Mn2O3\u2212xN\/p-SiOCH(N)\/Si capacitors exhibited poor dielectric breakdown characteristics in the as-fabricated stage, although, less degradation was found after thermal stress. Moreover, its time-dependence-dielectric-breakdown electric-field acceleration factor slightly increased after thermal stress, leading to a larger dielectric lifetime in a low electric-field as compared to other metal-insulator-silicon (MIS) capacitors. Furthermore, its Cu barrier ability under electrical or thermal stress was improved. As a consequence, the proposed Cu\/Mn2O3\u2212xN\/p-SiCOH(N) scheme is promising integrity for back-end-of-line interconnects.<\/jats:p>","DOI":"10.3390\/molecules24213882","type":"journal-article","created":{"date-parts":[[2019,10,28]],"date-time":"2019-10-28T11:26:13Z","timestamp":1572261973000},"page":"3882","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["Electrical Characteristics and Reliability of Nitrogen-Stuffed Porous Low-k SiOCH\/Mn2O3\u2212xN\/Cu Integration"],"prefix":"10.3390","volume":"24","author":[{"given":"Yi-Lung","family":"Cheng","sequence":"first","affiliation":[{"name":"Department of Electrical Engineering, National Chi-Nan University, Nan-Tou 54561, Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yu-Lu","family":"Lin","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, National Chi-Nan University, Nan-Tou 54561, Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chih-Yen","family":"Lee","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, National Chi-Nan University, Nan-Tou 54561, Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Giin-Shan","family":"Chen","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2355-9176","authenticated-orcid":false,"given":"Jau-Shiung","family":"Fang","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering, National Formosa University, Huwei 63201, Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2019,10,28]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"49","DOI":"10.1146\/annurev-matsci-082908-145305","article-title":"Porous pSiCOH ultralow-k dielectrics for chip interconnects prepared by PECVD","volume":"39","author":"Grill","year":"2009","journal-title":"Annu. Rev. Mater. Res."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"8793","DOI":"10.1063\/1.1567460","article-title":"Low dielectric constant materials for microelectronics","volume":"93","author":"Maex","year":"2003","journal-title":"J. Appl. Phys."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"011306","DOI":"10.1063\/1.4861876","article-title":"Progress in the development and understanding of advanced low k and ultra low k dieletrics for very large-scale integrated interconnects\u2014State of the art","volume":"1","author":"Grill","year":"2014","journal-title":"Appl. Phys. Rev."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"592","DOI":"10.1007\/s11664-005-0070-0","article-title":"Formation of Ti diffusion barrier layers in Thin Cu (Ti) alloy films","volume":"34","author":"Tsukimoto","year":"2005","journal-title":"J. Electron. Mater."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"4111","DOI":"10.1016\/j.tsf.2007.10.011","article-title":"Copper ion diffusion in porous and nonporous SiO2-based dielectrics using bias thermal stress and thermal stress tests","volume":"516","author":"Fisher","year":"2008","journal-title":"Thin Solid Film."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"265","DOI":"10.1016\/0169-4332(96)00464-3","article-title":"Diffusion barrier property of TaN between Si and Cu","volume":"99","author":"Oku","year":"1996","journal-title":"Appl. Surf. Sci."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"2538","DOI":"10.1149\/1.1838675","article-title":"Barrier Properties of Very Thin Ta and TaN Layers Against Copper Diffusion","volume":"145","author":"Wang","year":"1998","journal-title":"J. Electrochem. Soc."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"1666","DOI":"10.1016\/j.apsusc.2006.03.002","article-title":"Superior thermal stability of Ta\/TaN bi-layer structure for copper metallization","volume":"253","author":"Xie","year":"2006","journal-title":"Appl. Surf. Sci."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"295","DOI":"10.1109\/TDMR.2011.2141671","article-title":"Structural and Electronic Properties of a Mn Oxide Diffusion Barrier Layer Formed by Chemical Vapor Deposition","volume":"11","author":"Dixit","year":"2011","journal-title":"IEEE Trans. Device Mater. Reliab."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"041911","DOI":"10.1063\/1.1993759","article-title":"Self-forming diffusion barrier layer in Cu\u2013Mn alloy metallization","volume":"87","author":"Koike","year":"2005","journal-title":"Appl. Phys. Lett."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"05EB02","DOI":"10.1143\/JJAP.51.05EB02","article-title":"Atomic Layer Deposited Co (W) Film as a Single-Layered Barrier\/Liner for Next-Generation Cu-Interconnects","volume":"51","author":"Shimizu","year":"2012","journal-title":"Jpn. J. Appl. Phys."},{"key":"ref_12","doi-asserted-by":"crossref","unstructured":"Matsumoto, K., Maekawa, K., Nagai, H., and Koike, J. (2013, January 13\u201315). Deposition behavior and substrate dependency of ALD MnOx diffusion barrier layer. Proceedings of the 2013 IEEE International Interconnect Technology Conference (IITC), Kyoto, Japan.","DOI":"10.1109\/IITC.2013.6615566"},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"56","DOI":"10.1016\/j.tsf.2015.03.007","article-title":"Diffusion barrier property of MnSixOy layer formed by chemical vapor deposition for Cu advanced interconnect application","volume":"580","author":"Nguyen","year":"2015","journal-title":"Thin Solid Film."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"103","DOI":"10.1016\/j.mee.2013.02.057","article-title":"Characterization of Ru\u2013Mn composites for ULSI interconnects","volume":"112","author":"Wojcik","year":"2013","journal-title":"Microelectron. Eng."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"3040","DOI":"10.1149\/2.009312jes","article-title":"Mechanism of Co Liner as Enhancement Layer for Cu Interconnect Gap-Fill","volume":"160","author":"He","year":"2013","journal-title":"J. Electrochem. Soc."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"137","DOI":"10.1149\/2.0271811jss","article-title":"A 2-nm-Thick Mn Oxide on a Nitrogen-Stuffed Porous Carbon-Doped Organosilica as a Barrier of Cu Films","volume":"7","author":"Fang","year":"2018","journal-title":"ECS J. Solid State Sci. Technol."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"293","DOI":"10.1016\/S0167-9317(96)00057-3","article-title":"Ultra thin diffusion barriers for Cu interconnections at the gigabit generation and beyond","volume":"33","author":"Braud","year":"1997","journal-title":"Microelectron. Eng."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"133","DOI":"10.1016\/j.surfin.2018.09.001","article-title":"Investigation of nitrogen incorporation into manganese based copper diffusion barrier layers for future interconnect applications","volume":"13","author":"Selvaraju","year":"2018","journal-title":"Surf. Interf."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"3030","DOI":"10.1016\/j.mee.2011.05.002","article-title":"Study of metal barrier deposition-induced damage to porous low-k materials","volume":"88","author":"Zhao","year":"2011","journal-title":"Microelectron. Eng."},{"key":"ref_20","first-page":"28","article-title":"Analysis of dielectric constant of a self-forming barrier layer with Cu\u2013Mn alloy on TEOS-SiO2","volume":"27","author":"Chung","year":"2009","journal-title":"J. Vac. Sci. Technol. B Microelectron. Nanometer Struct."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"043527","DOI":"10.1063\/1.2773699","article-title":"Growth kinetics and thermal stability of a self-formed barrier layer at Cu-Mn\/SiO2 interface","volume":"102","author":"Koike","year":"2007","journal-title":"J. Appl. Phys."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"134","DOI":"10.1016\/j.jallcom.2017.05.335","article-title":"Amorphous CoTix as a liner\/diffusion barrier material for advanced copper metallization","volume":"721","author":"Hosseini","year":"2017","journal-title":"J. Alloy. Compd."},{"key":"ref_23","doi-asserted-by":"crossref","unstructured":"He, M., and Lu, T.-M. (2011). Metal-Dielectric Interfaces in Gigascale Electronics, Springer.","DOI":"10.1007\/978-1-4614-1812-2"},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"072902","DOI":"10.1063\/1.4913485","article-title":"Impact of carbon-doping on time dependent dielectric breakdown of SiO2-based films","volume":"106","author":"Zhao","year":"2015","journal-title":"Appl. Phys. Lett."},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"489","DOI":"10.1007\/s10853-012-6763-x","article-title":"Thermal and electrical stability of TaNx diffusion barriers for Cu metallization","volume":"48","author":"Dalili","year":"2013","journal-title":"J. Mater. Sci."},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"57","DOI":"10.1016\/j.surfcoat.2018.06.071","article-title":"Electrical and Reliability Characteristics of Dielectric Stack with Low Dielectric Constant SiCOH and Capping SiCNH Films","volume":"350","author":"Cheng","year":"2018","journal-title":"Surf. Coat. Technol."},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"529","DOI":"10.1016\/j.microrel.2013.12.020","article-title":"Electron fluence driven, Cu catalyzed, interface breakdown mechanism for BEOL low-k time dependent dielectric breakdown","volume":"54","author":"Chen","year":"2014","journal-title":"Microelectron. Reliab."},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"2","DOI":"10.1109\/TED.2008.2008680","article-title":"Addressing Cu\/low-k dielectric TDDB-reliability challenges for advanced CMOS technologies","volume":"56","author":"Chen","year":"2009","journal-title":"IEEE Trans. Electron. Devices"},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"871","DOI":"10.1016\/j.tsf.2018.02.042","article-title":"Comparison of various low dielectric constant materials","volume":"660","author":"Cheng","year":"2018","journal-title":"Thin Solid Film."}],"container-title":["Molecules"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1420-3049\/24\/21\/3882\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T13:30:00Z","timestamp":1760189400000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1420-3049\/24\/21\/3882"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,10,28]]},"references-count":29,"journal-issue":{"issue":"21","published-online":{"date-parts":[[2019,11]]}},"alternative-id":["molecules24213882"],"URL":"https:\/\/doi.org\/10.3390\/molecules24213882","relation":{"has-preprint":[{"id-type":"doi","id":"10.20944\/preprints201909.0260.v1","asserted-by":"object"}]},"ISSN":["1420-3049"],"issn-type":[{"value":"1420-3049","type":"electronic"}],"subject":[],"published":{"date-parts":[[2019,10,28]]}}}