{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,10]],"date-time":"2025-10-10T15:41:17Z","timestamp":1760110877211,"version":"build-2065373602"},"reference-count":55,"publisher":"MDPI AG","issue":"12","license":[{"start":{"date-parts":[[2024,6,13]],"date-time":"2024-06-13T00:00:00Z","timestamp":1718236800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"Doctoral Training Partnership (EPSRC, UK)"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Molecules"],"abstract":"<jats:p>InBi is a topological nodal line semimetal with strong spin\u2013orbit coupling. It is epitaxially compatible with III\u2013V semiconductors and, hence, an attractive material for topological spintronics. However, growth by molecular beam epitaxy (MBE) is challenging owing to the low melting point of InBi and the tendency to form droplets. We investigate approaches for epitaxial growth of InBi films on InSb(001) substrates using MBE and periodic supply epitaxy (PSE). It was not possible to achieve planar, stoichiometric InBi heteroepitaxy using MBE growth over the parameter space explored. However, pseudomorphic growth of ultra-thin InBi(001) layers could be achieved by PSE on InSb(001). A remarkable change to the in-plane epitaxial orientation is observed.<\/jats:p>","DOI":"10.3390\/molecules29122825","type":"journal-article","created":{"date-parts":[[2024,6,13]],"date-time":"2024-06-13T10:41:03Z","timestamp":1718275263000},"page":"2825","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["Heteroepitaxial Growth of InBi(001)"],"prefix":"10.3390","volume":"29","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-7481-7601","authenticated-orcid":false,"given":"Thomas J.","family":"Rehaag","sequence":"first","affiliation":[{"name":"Department of Physics, University of Warwick, Coventry CV4 7AL, UK"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6687-7660","authenticated-orcid":false,"given":"Gavin R.","family":"Bell","sequence":"additional","affiliation":[{"name":"Department of Physics, University of Warwick, Coventry CV4 7AL, UK"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2024,6,13]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"207","DOI":"10.1146\/annurev-matsci-070218-010023","article-title":"Transport of Topological Semimetals","volume":"49","author":"Hu","year":"2019","journal-title":"Annu. 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