{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,3]],"date-time":"2026-10-03T02:10:05Z","timestamp":1790993405236,"version":"4.1.0"},"reference-count":75,"publisher":"MDPI AG","issue":"17","license":[{"start":{"date-parts":[[2024,9,4]],"date-time":"2024-09-04T00:00:00Z","timestamp":1725408000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Molecules"],"abstract":"<jats:p>Quaternary (AlxGa1\u2212x)yIn1\u2212yP alloys grown on GaAs substrates have recently gained considerable interest in photonics for improving visible light-emitting diodes, laser diodes, and photodetectors. With two degrees of freedom (x, y) and keeping growth on a lattice-matched GaAs substrate, the (AlxGa1\u2212x)0.5In0.5P alloys are used for tuning structural, phonon, and optical characteristics in different energy regions from far-infrared (FIR) \u2192 near-infrared (NIR) \u2192 ultraviolet (UV). Despite the successful growth of (AlxGa1\u2212x)0.5In0.5P\/n+-GaAs epilayers, limited optical, phonon, and structural characteristics exist. Here, we report our results of carefully examined optical and vibrational properties on highly disordered alloys using temperature-dependent photoluminescence (TD-PL), Raman scattering spectroscopy (RSS), and Fourier-transform infrared reflectivity (FTIR). Macroscopic models were meticulously employed to analyze the TD-PL, RSS, and FTIR data of the (Al0.24Ga0.76)0.5In0.5P\/n+-GaAs epilayers to comprehend the energy-dependent characteristics. The Raman scattering and FTIR results of phonons helped analyze the reflectivity spectra in the FIR region. Optical constants were carefully integrated in the transfer matrix method for evaluating the reflectivity R(E) and transmission T(E) spectra in the NIR \u2192 UV regions, validating the TD-PL measurements of bandgap energies (EgPL).<\/jats:p>","DOI":"10.3390\/molecules29174188","type":"journal-article","created":{"date-parts":[[2024,9,4]],"date-time":"2024-09-04T02:25:49Z","timestamp":1725416749000},"page":"4188","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Assessment of Optical and Phonon Characteristics in MOCVD-Grown (AlxGa1\u2212x)0.5In0.5P\/n+-GaAs Epifilms"],"prefix":"10.3390","volume":"29","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-0272-3195","authenticated-orcid":false,"given":"Devki N.","family":"Talwar","sequence":"first","affiliation":[{"name":"Department of Physics, University of North Florida, 1 UNF Drive, Jacksonville, FL 32224-7699, USA"},{"name":"Department of Physics, Indiana University of Pennsylvania, 975 Oakland Avenue, 56 Weyandt Hall, Indiana, PA 15705-1087, USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhe Chuan","family":"Feng","sequence":"additional","affiliation":[{"name":"Southern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University, Marietta, GA 30060, USA"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2024,9,4]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"025051","DOI":"10.1063\/5.0137976","article-title":"Effect of window layer with different growth modes on the photoelectric properties of AlGaInP LED","volume":"13","author":"Xie","year":"2023","journal-title":"AIP Adv."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"126696","DOI":"10.1016\/j.jcrysgro.2022.126696","article-title":"In situ control of indium incorporation in (AlGa)1\u2212xInxP layers","volume":"590","author":"Weyers","year":"2022","journal-title":"J. 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