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Later-stage Foundation Project of Shenzhen Polytechnic University","award":["6023310019K"],"award-info":[{"award-number":["6023310019K"]}]},{"name":"Post-doctoral Later-stage Foundation Project of Shenzhen Polytechnic University","award":["6022312037K"],"award-info":[{"award-number":["6022312037K"]}]},{"name":"Post-doctoral Later-stage Foundation Project of Shenzhen Polytechnic University","award":["6023271020K"],"award-info":[{"award-number":["6023271020K"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Molecules"],"abstract":"<jats:p>The newly discovered 2D spin-gapless magnetic materials, which provide new opportunities for combining spin polarization and the quantum anomalous Hall effect, provide a new method for the design and application of memory and nanoscale devices. However, a low Curie temperature (TC) is a common limitation in most 2D ferromagnetic materials, and research on the topological properties of nontrivial 2D spin-gapless materials is still limited. We predict a novel spin-gapless semiconductor of monolayer h-VN, which has a high Curie temperature (~543 K), 100% spin polarization, and nontrivial topological properties. A nontrivial band gap is opened in the spin-gapless state when considering the spin\u2013orbit coupling (SOC); it can increase with the intensity of spin\u2013orbit coupling and the band gap increases linearly with SOC. By calculating the Chern number and edge states, we find that when the SOC strength is less than 250%, the monolayer h-VN is a quantum anomalous Hall insulator with a Chern number C = 1. In addition, the monolayer h-VN still belongs to the quantum anomalous Hall insulators with its tensile strain. Interestingly, the quantum anomalous Hall effect with a non-zero Chern number can be maintained when using h-BN as the substrate, making the designed structure more suitable for experimental implementation. Our results provide an ideal candidate material for achieving the QAHE at a high Curie temperature.<\/jats:p>","DOI":"10.3390\/molecules30102156","type":"journal-article","created":{"date-parts":[[2025,5,14]],"date-time":"2025-05-14T08:44:58Z","timestamp":1747212298000},"page":"2156","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["First-Principles Study on the High Spin-Polarized Ferromagnetic Semiconductor of Vanadium-Nitride Monolayer and Its Heterostructures"],"prefix":"10.3390","volume":"30","author":[{"ORCID":"https:\/\/orcid.org\/0009-0002-9043-0591","authenticated-orcid":false,"given":"Guiyuan","family":"Hua","sequence":"first","affiliation":[{"name":"Basic Medical College, Binzhou Medical University, Yantai 264003, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1488-2289","authenticated-orcid":false,"given":"Xuming","family":"Wu","sequence":"additional","affiliation":[{"name":"College of Physics Science and Technology, Lingnan Normal University, Zhanjiang 524048, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xujin","family":"Ge","sequence":"additional","affiliation":[{"name":"School of Physics and Electric Engineering, Anyang Normal University, Anyang 455000, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tianhang","family":"Zhou","sequence":"additional","affiliation":[{"name":"College of Carbon Neutrality Future Technology, China University of Petroleum (Beijing), Beijing 102249, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0009-5950-2420","authenticated-orcid":false,"given":"Zhibin","family":"Shao","sequence":"additional","affiliation":[{"name":"Physics Laboratory, Industrial Training Center, Shenzhen Polytechnic University, Shenzhen 518055, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2025,5,14]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"519","DOI":"10.1103\/RevModPhys.58.519","article-title":"The quantized Hall effect","volume":"58","author":"Klitzing","year":"1986","journal-title":"Rev. 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