{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,23]],"date-time":"2026-10-23T21:12:05Z","timestamp":1792789925073,"version":"4.5.0"},"reference-count":48,"publisher":"MDPI AG","issue":"19","license":[{"start":{"date-parts":[[2026,9,22]],"date-time":"2026-09-22T00:00:00Z","timestamp":1790035200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"National Natural Science Foundation of China","award":["12564025"],"award-info":[{"award-number":["12564025"]}],"id":[{"id":"https:\/\/ror.org\/01h0zpd94","id-type":"ROR","asserted-by":"crossref"}]},{"award":["12564025"],"award-info":[{"award-number":["12564025"]}],"id":[{"id":"https:\/\/ror.org\/01h0zpd94","id-type":"ROR","asserted-by":"publisher"}]},{"name":"Youth Project of Scientific and Technological Research Program of Chongqing Education Commission","award":["KJQN202601265"],"award-info":[{"award-number":["KJQN202601265"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Molecules"],"abstract":"<jats:p>Due to significant progress in architecture through the vertical stacking of negative channel metal oxide semiconductor (MOS) and positive channel MOS devices, the complementary field\u2013effect transistor (CFET) is regarded as one of the most promising technologies for the next generation beyond the gate\u2013all\u2013around (GAA) architecture. This study comprehensively investigated the transport characteristics of one\u2013dimensional (1D) red carbon ribbon (RCR) field\u2013effect transistors (1D\u2013RCR\u2013FETs) with GAA gate and sub 5 nm gate lengths (Lg), using ab initio methods implemented in the Atomistix ToolKit 2019 software. Based on theoretical simulation results, n\u2013 and p\u2013type GAA 1D\u2013RCR\u2013FETs with Lg of 5 nm satisfied the low\u2013power (LP) and high\u2013performance (HP) criteria for the 2039 horizon, according to the International Roadmap for Devices and Systems (IRDS) 2024 edition, and the corresponding results with Lg of 3 nm met the HP criteria for the 2039 horizon. Notably, both LP and HP applications demonstrated excellent symmetry between n\u2013 and p\u2013FET devices at Lg = 5 nm, with the power\u2013delay product, delay time, and on\u2013state current ratios often ranging between 0.59 and 2.65, facilitating the development of CFETs. This study provides important theoretical insights highlighting the potential of 1D RCRs as promising channel materials for sub 5 nm 1D CFETs with both HP and LP application requirements.<\/jats:p>","DOI":"10.3390\/molecules31193365","type":"journal-article","created":{"date-parts":[[2026,9,22]],"date-time":"2026-09-22T11:09:35Z","timestamp":1790075375000},"page":"3365","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["High\u2013Performance and Low\u2013Power Complementary Transistors Based on Red Carbon Ribbon"],"prefix":"10.3390","volume":"31","author":[{"given":"Yelu","family":"He","sequence":"first","affiliation":[{"name":"Department of Physics, Chongqing Sanxia University of Science and Technology, Wanzhou 404100, China"}],"role":[{"vocabulary":"crossref","role":"author"},{"role":"conceptualization","vocabulary":"credit"},{"role":"writing-original-draft","vocabulary":"credit"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6290-4908","authenticated-orcid":false,"given":"Xingyi","family":"Tan","sequence":"additional","affiliation":[{"name":"Department of Physics, Chongqing Sanxia University of Science and Technology, Wanzhou 404100, China"},{"name":"College of Intelligent Systems Science and Engineering, Hubei Minzu University, Enshi 445000, China"}],"role":[{"vocabulary":"crossref","role":"author"},{"role":"conceptualization","vocabulary":"credit"},{"role":"software","vocabulary":"credit"},{"role":"methodology","vocabulary":"credit"},{"role":"funding-acquisition","vocabulary":"credit"}]},{"given":"Gang","family":"Xu","sequence":"additional","affiliation":[{"name":"Department of Physics, Chongqing Sanxia University of Science and Technology, Wanzhou 404100, China"}],"role":[{"vocabulary":"crossref","role":"author"},{"role":"conceptualization","vocabulary":"credit"},{"role":"validation","vocabulary":"credit"}]},{"given":"Huan","family":"Xiao","sequence":"additional","affiliation":[{"name":"Department of Physics, Chongqing Sanxia University of Science and Technology, Wanzhou 404100, China"}],"role":[{"vocabulary":"crossref","role":"author"},{"role":"formal-analysis","vocabulary":"credit"}]},{"given":"Qiang","family":"Li","sequence":"additional","affiliation":[{"name":"College of Intelligent Systems Science and Engineering, Hubei Minzu University, Enshi 445000, China"}],"role":[{"vocabulary":"crossref","role":"author"},{"role":"formal-analysis","vocabulary":"credit"},{"role":"software","vocabulary":"credit"}]}],"member":"1968","published-online":{"date-parts":[[2026,9,22]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"144","DOI":"10.1038\/530144a","article-title":"The chips are down for Moore\u2019s law","volume":"530","author":"Waldrop","year":"2016","journal-title":"Nature"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1016\/j.physrep.2021.07.006","article-title":"Sub\u201310 nm two\u2013dimensional transistors: Theory and experiment","volume":"938","author":"Quhe","year":"2021","journal-title":"Phys. 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