{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,18]],"date-time":"2026-01-18T11:49:20Z","timestamp":1768736960613,"version":"3.49.0"},"reference-count":50,"publisher":"MDPI AG","issue":"8","license":[{"start":{"date-parts":[[2021,7,30]],"date-time":"2021-07-30T00:00:00Z","timestamp":1627603200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["11802112"],"award-info":[{"award-number":["11802112"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Nanomaterials"],"abstract":"<jats:p>Mechanical anisotropy and point defects would greatly affect the product quality while producing silicon wafers via diamond-wire cutting. For three major orientations concerned in wafer production, their mechanical performances under the nanoscale effects of a point defect were systematically investigated through molecular dynamics methods. The results indicated anisotropic mechanical performance with fracture phenomena in the uniaxial deformation process of monocrystalline silicon. Exponential reduction caused by the point defect has been demonstrated for some properties like yield strength and elastic strain energy release. Dislocation analysis suggested that the slip of dislocations appeared and created hexagonal diamond structures with stacking faults in the [100] orientation. Meanwhile, no dislocation was observed in [110] and [111] orientations. Visualization of atomic stress proved that the extreme stress regions of the simulation models exhibited different geometric and numerical characteristics due to the mechanical anisotropy. Moreover, the regional evolution of stress concentration and crystal fracture were interrelated and mutually promoted. This article contributes to the research towards the mechanical and fracture anisotropy of monocrystalline silicon.<\/jats:p>","DOI":"10.3390\/nano11081965","type":"journal-article","created":{"date-parts":[[2021,8,1]],"date-time":"2021-08-01T21:44:32Z","timestamp":1627854272000},"page":"1965","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":14,"title":["General Molecular Dynamics Approach to Understand the Mechanical Anisotropy of Monocrystalline Silicon under the Nanoscale Effects of Point Defect"],"prefix":"10.3390","volume":"11","author":[{"given":"Wei","family":"Wan","sequence":"first","affiliation":[{"name":"Institute of Photovoltaics, Nanchang University, Nanchang 330031, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Changxin","family":"Tang","sequence":"additional","affiliation":[{"name":"Institute of Photovoltaics, Nanchang University, Nanchang 330031, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jianjie","family":"Zhang","sequence":"additional","affiliation":[{"name":"Institute of Photovoltaics, Nanchang University, Nanchang 330031, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1443-4531","authenticated-orcid":false,"given":"Lang","family":"Zhou","sequence":"additional","affiliation":[{"name":"Institute of Photovoltaics, Nanchang University, Nanchang 330031, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2021,7,30]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"015502","DOI":"10.35848\/1347-4065\/abcdb4","article-title":"Floating zone silicon wafer bonded to Czochralski silicon substrate by surface-activated bonding at room temperature for infrared complementary metal-oxide-semiconductor image sensors","volume":"60","author":"Koga","year":"2021","journal-title":"Jpn. 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