{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,12]],"date-time":"2025-10-12T02:16:58Z","timestamp":1760235418977,"version":"build-2065373602"},"reference-count":27,"publisher":"MDPI AG","issue":"9","license":[{"start":{"date-parts":[[2021,8,27]],"date-time":"2021-08-27T00:00:00Z","timestamp":1630022400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100004663","name":"Ministry of Science and Technology, Taiwan","doi-asserted-by":"publisher","award":["MOST110-2218-E-A49-013-MBK","MOST110-2218-E-A49-012-MBK","MOST109-2221-E-009-160-MY3"],"award-info":[{"award-number":["MOST110-2218-E-A49-013-MBK","MOST110-2218-E-A49-012-MBK","MOST109-2221-E-009-160-MY3"]}],"id":[{"id":"10.13039\/501100004663","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Nanomaterials"],"abstract":"<jats:p>In this study, the influence of oxygen concentration in InWZnO (IWZO), which was used as the switching layer of conductive bridge random access memory, (CBRAM) is investigated. With different oxygen flow during the sputtering process, the IWZO film can be fabricated with different oxygen concentrations and different oxygen vacancy distribution. In addition, the electrical characteristics of CBRAM device with different oxygen concentration are compared and further analyzed with an atomic force microscope and X-ray photoelectron spectrum. Furthermore, a stacking structure with different bilayer switching is also systematically discussed. Compared with an interchange stacking layer and other single layer memory, the CBRAM with specific stacking sequence of bilayer oxygen-poor\/-rich IWZO (IWZOx\/IWZOy, x &lt; y) exhibits more stable distribution of a resistance state and also better endurance (more than 3 \u00d7 104 cycles). Meanwhile, the memory window of IWZOx\/IWZOy can even be maintained over 104 s at 85 \u00b0C. Those improvements can be attributed to the oxygen vacancy distribution in switching layers, which may create a suitable environment for the conductive filament formation or rupture. Therefore, it is believed that the specific stacking bilayer IWZO CBRAM might further pave the way for emerging memory applications.<\/jats:p>","DOI":"10.3390\/nano11092204","type":"journal-article","created":{"date-parts":[[2021,8,31]],"date-time":"2021-08-31T04:07:28Z","timestamp":1630382848000},"page":"2204","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film"],"prefix":"10.3390","volume":"11","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-5963-8047","authenticated-orcid":false,"given":"Chih-Chieh","family":"Hsu","sequence":"first","affiliation":[{"name":"Department of Electronics Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8560-3668","authenticated-orcid":false,"given":"Po-Tsun","family":"Liu","sequence":"additional","affiliation":[{"name":"Department of Photonics and Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kai-Jhih","family":"Gan","sequence":"additional","affiliation":[{"name":"Department of Electronics Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6939-5723","authenticated-orcid":false,"given":"Dun-Bao","family":"Ruan","sequence":"additional","affiliation":[{"name":"Department of Electronics Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Simon M.","family":"Sze","sequence":"additional","affiliation":[{"name":"Department of Electronics Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2021,8,27]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"1951","DOI":"10.1109\/JPROC.2012.2190369","article-title":"Metal\u2013oxide RRAM","volume":"100","author":"Wong","year":"2012","journal-title":"Proc. IEEE Inst. Electr. Electron. Eng."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1007\/s13391-011-0301-x","article-title":"Transparent amorphous oxide semiconductor thin film transistor","volume":"7","author":"Kwon","year":"2011","journal-title":"Electron. Mater. Lett."},{"key":"ref_3","doi-asserted-by":"crossref","unstructured":"Yen, T.J., Chin, A., and Gritsenko, V. (2020). High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer. Nanomaterials, 10.","DOI":"10.3390\/nano10112145"},{"key":"ref_4","doi-asserted-by":"crossref","unstructured":"Yen, T.J., Chin, A., and Gritsenko, V. (2021). Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer. Nanomaterials, 11.","DOI":"10.3390\/nano11010092"},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"1800824","DOI":"10.1002\/aelm.201800824","article-title":"Photoresponsivity Enhancement and Extension of the Detection Spectrum for Amorphous Oxide Semiconductor Based Sensors","volume":"5","author":"Ruan","year":"2019","journal-title":"Adv. Electron. Mater."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"5","DOI":"10.3390\/nano11051101","article-title":"High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles","volume":"11","author":"Naqi","year":"2021","journal-title":"Nanomaterials"},{"key":"ref_7","doi-asserted-by":"crossref","unstructured":"Min, S.-Y., and Cho, W.-J. (2021). High-Performance Resistive Switching in Solution-Derived IGZO: N Memristors by Microwave-Assisted Nitridation. Nanomaterials, 11.","DOI":"10.3390\/nano11051081"},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"14141","DOI":"10.1038\/s41598-019-50816-7","article-title":"Highly durable and flexible gallium-based oxide conductive-bridging random access memory","volume":"9","author":"Gan","year":"2019","journal-title":"Sci. Rep."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"035203","DOI":"10.1088\/1361-6528\/abbeab","article-title":"Effect of tungsten doping on the variability of InZnO conductive-bridging random access memory","volume":"32","author":"Gan","year":"2020","journal-title":"Nanotechnology"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"22521","DOI":"10.1021\/acsami.9b04257","article-title":"Performance Enhancement for Tungsten-Doped Indium Oxide Thin Film Transistor by Hydrogen Peroxide as Cosolvent in Room-Temperature Supercritical Fluid Systems","volume":"11","author":"Ruan","year":"2019","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"182104","DOI":"10.1063\/1.5142557","article-title":"Role of tungsten dopants in indium oxide thin-film transistor on radiation hardness technology","volume":"116","author":"Ruan","year":"2020","journal-title":"Appl. Phys. Lett."},{"key":"ref_12","doi-asserted-by":"crossref","unstructured":"Molas, G., Vianello, E., Dahmani, F., Barci, M., Blaise, P., Guy, J., Toffoli, A., Bernard, M., Roule, A., and Pierre, F. (2014, January 15\u201317). Controlling oxygen vacancies in doped oxide based CBRAM for improved memory performances. Proceedings of the 2014 IEEE International Electron Devices Meeting, San Francisco, CA, USA.","DOI":"10.1109\/IEDM.2014.7046993"},{"key":"ref_13","doi-asserted-by":"crossref","unstructured":"Liu, C.-F., Tang, X.-G., Wang, L.-Q., Tang, H., Jiang, Y.-P., Liu, Q.-X., Li, W.-H., and Tang, Z.-H. (2019). Resistive Switching Characteristics of HfO2 Thin Films on Mica Substrates Prepared by Sol-Gel Process. Nanomaterials, 9.","DOI":"10.3390\/nano9081124"},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"505704","DOI":"10.1088\/1361-6528\/abb505","article-title":"Electronic structure and charge transport mechanism in a forming-free SiOx-based memristor","volume":"31","author":"Gismatulin","year":"2020","journal-title":"Nanotechnology"},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"2417","DOI":"10.1038\/s41598-021-82159-7","article-title":"Charge transport mechanism in the forming-free memristor based on silicon nitride","volume":"11","author":"Gismatulin","year":"2021","journal-title":"Sci. Rep."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"110321","DOI":"10.1016\/j.vacuum.2021.110321","article-title":"Impact of annealing environment on performance of InWZnO conductive bridge random access memory","volume":"191","author":"Hsu","year":"2021","journal-title":"Vacuum"},{"key":"ref_17","doi-asserted-by":"crossref","unstructured":"Yen, T.-J., Chin, A., and Gritsenko, V. (2021). Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation. Nanomaterials, 11.","DOI":"10.3390\/nano11061401"},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"6817","DOI":"10.1007\/s11664-020-08177-9","article-title":"Effect of Annealing Treatment on Performance of Ga2O3 Conductive-Bridging Random-Access Memory","volume":"49","author":"Gan","year":"2020","journal-title":"J. Electron. Mater."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"143501","DOI":"10.1063\/1.5116359","article-title":"Investigation of resistive switching in copper\/InGaZnO\/Al2O3-based memristor","volume":"115","author":"Gan","year":"2019","journal-title":"Appl. Phys. Lett."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"732","DOI":"10.1038\/ncomms1737","article-title":"Observation of conducting filament growth in nanoscale resistive memories","volume":"3","author":"Yang","year":"2012","journal-title":"Nat. Commun."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"073501","DOI":"10.1063\/1.4865802","article-title":"Multilevel unipolar resistive memory switching in amorphous SmGdO3 thin film","volume":"104","author":"Shatma","year":"2014","journal-title":"Appl. Phys. Lett."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"833","DOI":"10.1038\/nmat2023","article-title":"Nanoionics-based resistive switching memories","volume":"6","author":"Waser","year":"2007","journal-title":"Nat. Mater."},{"key":"ref_23","doi-asserted-by":"crossref","unstructured":"Cho, H., and Kim, S. (2020). Emulation of Biological Synapse Characteristics from Cu\/AlN\/TiN Conductive Bridge Random Access Memory. Nanomaterials, 10.","DOI":"10.3390\/nano10091709"},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"294","DOI":"10.1016\/j.cap.2015.11.022","article-title":"Electrical properties of the HfO2-Al2O3 nanolaminates with homogeneous and graded compositions on InP","volume":"16","author":"Mahata","year":"2016","journal-title":"Curr. Appl. Phys."},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"109630","DOI":"10.1016\/j.vacuum.2020.109630","article-title":"Annealing effects on resistive switching of IGZO-based CBRAM devices","volume":"180","author":"Gan","year":"2020","journal-title":"Vacuum"},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"1199","DOI":"10.1016\/j.ceramint.2020.08.238","article-title":"Modified resistive switching performance by increasing Al concentration in HfO2 on transparent indium tin oxide electrode","volume":"47","author":"Mahata","year":"2020","journal-title":"Ceram. Int."},{"key":"ref_27","doi-asserted-by":"crossref","unstructured":"Mahata, C., Kang, M., and Kim, S. (2020). Multi-Level analog resistive switching characteristics in tri-layer HfO2\/Al2O3\/HfO2 based memristor on ITO electrode. Nanomateirals, 10.","DOI":"10.3390\/nano10102069"}],"container-title":["Nanomaterials"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/2079-4991\/11\/9\/2204\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T06:53:14Z","timestamp":1760165594000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/2079-4991\/11\/9\/2204"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,8,27]]},"references-count":27,"journal-issue":{"issue":"9","published-online":{"date-parts":[[2021,9]]}},"alternative-id":["nano11092204"],"URL":"https:\/\/doi.org\/10.3390\/nano11092204","relation":{},"ISSN":["2079-4991"],"issn-type":[{"type":"electronic","value":"2079-4991"}],"subject":[],"published":{"date-parts":[[2021,8,27]]}}}