{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,28]],"date-time":"2026-08-28T01:42:21Z","timestamp":1787881341102,"version":"build-2784847793"},"reference-count":56,"publisher":"MDPI AG","issue":"7","license":[{"start":{"date-parts":[[2022,4,3]],"date-time":"2022-04-03T00:00:00Z","timestamp":1648944000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["11802112"],"award-info":[{"award-number":["11802112"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Nanomaterials"],"abstract":"<jats:p>Strain rate is a critical parameter in the mechanical application of nano-devices. A comparative atomistic study on both perfect monocrystalline silicon crystal and silicon nanowire was performed to investigate how the strain rate affects the mechanical response of these silicon structures. Using a rate response model, the strain rate sensitivity and the critical strain rate of two structures were given. The rate-dependent dislocation activities in the fracture process were also discussed, from which the dislocation nucleation and motion were found to play an important role in the low strain rate deformations. Finally, through the comparison of five equivalent stresses, the von Mises stress was verified as a robust yield criterion of the two silicon structures under the strain rate effects.<\/jats:p>","DOI":"10.3390\/nano12071203","type":"journal-article","created":{"date-parts":[[2022,4,4]],"date-time":"2022-04-04T05:50:43Z","timestamp":1649051443000},"page":"1203","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["Revisiting the Rate-Dependent Mechanical Response of Typical Silicon Structures via Molecular Dynamics"],"prefix":"10.3390","volume":"12","author":[{"given":"Yi","family":"Liu","sequence":"first","affiliation":[{"name":"Institute of Photovoltaics, Nanchang University, Nanchang 330031, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wei","family":"Wan","sequence":"additional","affiliation":[{"name":"Institute of Photovoltaics, Nanchang University, Nanchang 330031, China"},{"name":"Institute for Advanced Study, Nanchang University, Nanchang 330031, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Quan","family":"Li","sequence":"additional","affiliation":[{"name":"School of Automotive Application, Hunan Automotive Engineering Vocational College, Zhuzhou 412001, China"},{"name":"School of Material Science and Engineering, Nanchang University, Nanchang 330031, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhenkang","family":"Xiong","sequence":"additional","affiliation":[{"name":"Department of Science and Technology, Nanchang University College of Science and Technology, Jiujiang 332020, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Changxin","family":"Tang","sequence":"additional","affiliation":[{"name":"Institute of Photovoltaics, Nanchang University, Nanchang 330031, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1443-4531","authenticated-orcid":false,"given":"Lang","family":"Zhou","sequence":"additional","affiliation":[{"name":"Institute of Photovoltaics, Nanchang University, Nanchang 330031, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2022,4,3]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"807","DOI":"10.1134\/S0040601521100037","article-title":"Modern development trends in photovoltaics","volume":"68","author":"Popel","year":"2021","journal-title":"Therm. 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