{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,8]],"date-time":"2025-11-08T23:01:41Z","timestamp":1762642901680,"version":"build-2065373602"},"reference-count":56,"publisher":"MDPI AG","issue":"12","license":[{"start":{"date-parts":[[2023,6,20]],"date-time":"2023-06-20T00:00:00Z","timestamp":1687219200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"National Science and Technology Council of Taiwan","award":["110-2221-E-A49-137-MY3"],"award-info":[{"award-number":["110-2221-E-A49-137-MY3"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Nanomaterials"],"abstract":"<jats:p>This work reports the first nanocrystalline SnON (7.6% nitrogen content) nanosheet n-type Field-Effect Transistor (nFET) with the transistor\u2019s effective mobility (\u00b5eff) as high as 357 and 325 cm2\/V-s at electron density (Qe) of 5 \u00d7 1012 cm\u22122 and an ultra-thin body thickness (Tbody) of 7 nm and 5 nm, respectively. At the same Tbody and Qe, these \u00b5eff values are significantly higher than those of single-crystalline Si, InGaAs, thin-body Si-on-Insulator (SOI), two-dimensional (2D) MoS2 and WS2. The new discovery of a slower \u00b5eff decay rate at high Qe than that of the SiO2\/bulk-Si universal curve was found, owing to a one order of magnitude lower effective field (Eeff) by more than 10 times higher dielectric constant (\u03ba) in the channel material, which keeps the electron wave-function away from the gate-oxide\/semiconductor interface and lowers the gate-oxide surface scattering. In addition, the high \u00b5eff is also due to the overlapped large radius s-orbitals, low 0.29 mo effective mass (me*) and low polar optical phonon scattering. SnON nFETs with record-breaking \u00b5eff and quasi-2D thickness enable a potential monolithic three-dimensional (3D) integrated circuit (IC) and embedded memory for 3D biological brain-mimicking structures.<\/jats:p>","DOI":"10.3390\/nano13121892","type":"journal-article","created":{"date-parts":[[2023,6,21]],"date-time":"2023-06-21T01:35:11Z","timestamp":1687311311000},"page":"1892","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":4,"title":["Superior High Transistor\u2019s Effective Mobility of 325 cm2\/V-s by 5 nm Quasi-Two-Dimensional SnON nFET"],"prefix":"10.3390","volume":"13","author":[{"given":"Pheiroijam","family":"Pooja","sequence":"first","affiliation":[{"name":"Department of Electronics Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chun Che","family":"Chien","sequence":"additional","affiliation":[{"name":"Department of Electronics Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6790-2437","authenticated-orcid":false,"given":"Albert","family":"Chin","sequence":"additional","affiliation":[{"name":"Department of Electronics Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2023,6,20]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"29","DOI":"10.1109\/MSPEC.2007.4337663","article-title":"The high-k solution","volume":"44","author":"Bohr","year":"2007","journal-title":"IEEE Spectr."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"755","DOI":"10.1016\/j.sse.2004.10.014","article-title":"Beyond the conventional transistor","volume":"49","author":"Wong","year":"2005","journal-title":"Solid-State Electron."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"274","DOI":"10.1109\/LED.2013.2291560","article-title":"Low-voltage steep turn-on p-MOSFET using ferroelectric high-\u03ba gate dielectric","volume":"35","author":"Cheng","year":"2014","journal-title":"IEEE Electron Device Lett."},{"key":"ref_4","doi-asserted-by":"crossref","unstructured":"Chang, T., Kao, H.L., Chen, Y.J., Liu, S.L., McAlister, S.P., and Chin, A. 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