{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T02:24:37Z","timestamp":1760149477677,"version":"build-2065373602"},"reference-count":64,"publisher":"MDPI AG","issue":"15","license":[{"start":{"date-parts":[[2023,8,7]],"date-time":"2023-08-07T00:00:00Z","timestamp":1691366400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"Heilongjiang Provincial Natural Science Foundation of China","award":["ZD2023B001"],"award-info":[{"award-number":["ZD2023B001"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Nanomaterials"],"abstract":"<jats:p>A series of four-terminal V7(Bz)8-WGNR devices were established with wrinkled graphene nanoribbon (WGNR) and vanadium-benzene nanowire (V7(Bz)8). The spin-polarized V7(Bz)8 as the gate channel was placed crossing the plane, the concave (endo-positioned) and the convex (endo-positioned) surface of WGNR with different curvatures via Van der Waals interaction. The density functional theory (DFT) and nonequilibrium Green\u2019s function (NEGF) methods were adopted to calculate the transport properties of these devices at various bias voltages (VS) and gate voltages (VG), such as the conductance, spin-polarized currents, transmission spectra (TS), local density of states (LDOS), and scattering states. The results indicate that the position of V7(Bz)8 and the bending curvature of WGNR play important roles in tuning the transport properties of these four-terminal devices. A spin-polarized transport property is induced for these four-terminal devices by the spin-polarized nature of V7(Bz)8. Particularly, the down-spin channel disturbs strongly on the source-to-drain conductance of WGNR when V7(Bz)8 is endo-positioned crossing the WGNR. Our findings on the novel property of four-terminal V7(Bz)8-WGNR devices provide useful guidelines for achieving flexible graphene-based electronic nanodevices by attaching other similar multidecker metal-arene nanowires.<\/jats:p>","DOI":"10.3390\/nano13152270","type":"journal-article","created":{"date-parts":[[2023,8,7]],"date-time":"2023-08-07T06:37:31Z","timestamp":1691390251000},"page":"2270","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Transport Property of Wrinkled Graphene Nanoribbon Tuned by Spin-Polarized Gate Made of Vanadium-Benzene Nanowire"],"prefix":"10.3390","volume":"13","author":[{"given":"Hong","family":"Yu","sequence":"first","affiliation":[{"name":"School of Materials Science and Chemical Engineering, Harbin University of Science and Technology, Harbin 150080, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yan","family":"Shang","sequence":"additional","affiliation":[{"name":"School of Materials Science and Chemical Engineering, Harbin University of Science and Technology, Harbin 150080, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yangyang","family":"Hu","sequence":"additional","affiliation":[{"name":"School of Materials Science and Chemical Engineering, Harbin University of Science and Technology, Harbin 150080, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Lei","family":"Pei","sequence":"additional","affiliation":[{"name":"School of Materials Science and Chemical Engineering, Harbin University of Science and Technology, Harbin 150080, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3413-5926","authenticated-orcid":false,"given":"Guiling","family":"Zhang","sequence":"additional","affiliation":[{"name":"School of Materials Science and Chemical Engineering, Harbin University of Science and Technology, Harbin 150080, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2023,8,7]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"11979","DOI":"10.1021\/acsnano.2c01952","article-title":"Topological stone\u2013wales defects enhance bonding and electronic coupling at the graphene\/metal interface","volume":"16","author":"Klein","year":"2022","journal-title":"ACS Nano"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"705","DOI":"10.1021\/acsaelm.2c00947","article-title":"Enhanced photoresponse in few-layer SnS2 field-effect transistors modified with methylammonium lead iodide perovskite","volume":"5","author":"Loes","year":"2023","journal-title":"ACS Appl. 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