{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,1]],"date-time":"2026-10-01T22:25:17Z","timestamp":1790893517812,"version":"4.1.0"},"reference-count":90,"publisher":"MDPI AG","issue":"21","license":[{"start":{"date-parts":[[2023,10,27]],"date-time":"2023-10-27T00:00:00Z","timestamp":1698364800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100004608","name":"One Hundred Person Project of the Chinese Academy of Sciences and Natural Science Foundation of Jiangsu Province","doi-asserted-by":"publisher","award":["BK20201366"],"award-info":[{"award-number":["BK20201366"]}],"id":[{"id":"10.13039\/501100004608","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Nanomaterials"],"abstract":"<jats:p>Two-dimensional (2D) transitional metal dichalcogenides (TMDs) have garnered remarkable attention in electronics, optoelectronics, and hydrogen precipitation catalysis due to their exceptional physicochemical properties. Their utilisation in optoelectronic devices is especially notable for overcoming graphene\u2019s zero-band gap limitation. Moreover, TMDs offer advantages such as direct band gap transitions, high carrier mobility, and efficient switching ratios. Achieving precise adjustments to the electronic properties and band gap of 2D semiconductor materials is crucial for enhancing their capabilities. Researchers have explored the creation of 2D alloy phases through heteroatom doping, a strategy employed to fine-tune the band structure of these materials. Current research on 2D alloy materials encompasses diverse aspects like synthesis methods, catalytic reactions, energy band modulation, high-voltage phase transitions, and potential applications in electronics and optoelectronics. This paper comprehensively analyses 2D TMD alloy materials, covering their growth, preparation, optoelectronic properties, and various applications including hydrogen evolution reaction catalysis, field-effect transistors, lithium-sulphur battery catalysts, and lasers. The growth process and characterisation techniques are introduced, followed by a summary of the optoelectronic properties of these materials.<\/jats:p>","DOI":"10.3390\/nano13212843","type":"journal-article","created":{"date-parts":[[2023,10,27]],"date-time":"2023-10-27T09:56:36Z","timestamp":1698400596000},"page":"2843","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":26,"title":["Progress on Two-Dimensional Transitional Metal Dichalcogenides Alloy Materials: Growth, Characterisation, and Optoelectronic Applications"],"prefix":"10.3390","volume":"13","author":[{"given":"Jia","family":"Yu","sequence":"first","affiliation":[{"name":"Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing 211816, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shiru","family":"Wu","sequence":"additional","affiliation":[{"name":"Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing 211816, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xun","family":"Zhao","sequence":"additional","affiliation":[{"name":"Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing 211816, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhipu","family":"Li","sequence":"additional","affiliation":[{"name":"Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing 211816, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaowei","family":"Yang","sequence":"additional","affiliation":[{"name":"Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing 211816, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Qian","family":"Shen","sequence":"additional","affiliation":[{"name":"Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing 211816, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Min","family":"Lu","sequence":"additional","affiliation":[{"name":"Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing 211816, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiaoji","family":"Xie","sequence":"additional","affiliation":[{"name":"Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing 211816, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Da","family":"Zhan","sequence":"additional","affiliation":[{"name":"Changchun Institute of Optics, Fine Mechanics & Physics (CIOMP), Chinese Academy of Sciences, Changchun 130033, China"},{"name":"University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9683-1188","authenticated-orcid":false,"given":"Jiaxu","family":"Yan","sequence":"additional","affiliation":[{"name":"Changchun Institute of Optics, Fine Mechanics & Physics (CIOMP), Chinese Academy of Sciences, Changchun 130033, China"},{"name":"University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2023,10,27]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"264","DOI":"10.1021\/acs.nanolett.5b03662","article-title":"Synthesis of WS2xSe2\u20132x alloy nanosheets with composition-tunable electronic properties","volume":"16","author":"Duan","year":"2016","journal-title":"Nano Lett."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"1705015","DOI":"10.1002\/adma.201705015","article-title":"Synthesis of Large-Size 1T\u2032 ReS2xSe2(1\u2212x) Alloy Monolayer with Tunable Bandgap and Carrier Type","volume":"29","author":"Cui","year":"2017","journal-title":"Adv. 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