{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,13]],"date-time":"2026-05-13T22:17:15Z","timestamp":1778710635199,"version":"3.51.4"},"reference-count":30,"publisher":"MDPI AG","issue":"3","license":[{"start":{"date-parts":[[2025,1,23]],"date-time":"2025-01-23T00:00:00Z","timestamp":1737590400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"EU\u2019s Horizon 2020 Research and Innovation Framework Program","award":["964398"],"award-info":[{"award-number":["964398"]}]},{"name":"EU\u2019s Horizon 2020 Research and Innovation Framework Program","award":["101057977"],"award-info":[{"award-number":["101057977"]}]},{"name":"EU\u2019s Horizon 2020 Research and Innovation Framework Program","award":["PE0000023-NQSTI"],"award-info":[{"award-number":["PE0000023-NQSTI"]}]},{"name":"PNRR MUR project","award":["964398"],"award-info":[{"award-number":["964398"]}]},{"name":"PNRR MUR project","award":["101057977"],"award-info":[{"award-number":["101057977"]}]},{"name":"PNRR MUR project","award":["PE0000023-NQSTI"],"award-info":[{"award-number":["PE0000023-NQSTI"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Nanomaterials"],"abstract":"<jats:p>Indium Arsenide is a III\u2013V semiconductor with low electron effective mass, a small band gap, strong spin\u2013orbit coupling, and a large g-factor. These properties and its surface Fermi level pinned in the conduction band make InAs a good candidate for developing superconducting solid-state quantum devices. Here, we report the epitaxial growth of very thin InAs layers with thicknesses ranging from 12.5 nm to 500 nm grown by Molecular Beam Epitaxy on InxAl1\u2212xAs metamorphic buffers. Differently than InAs substrates, these buffers have the advantage of being insulating at cryogenic temperatures, which allows for multiple device operations on the same wafer and thus making the approach scalable. The structural properties of the InAs layers were investigated by high-resolution X-ray diffraction, demonstrating the high crystal quality of the InAs layers. Furthermore, their transport properties, such as total and sheet carrier concentration, sheet resistance, and carrier mobility, were measured in the van der Pauw configuration at room temperature. A simple conduction model was employed to quantify the surface, bulk, and interface contributions to the overall carrier concentration and mobility.<\/jats:p>","DOI":"10.3390\/nano15030173","type":"journal-article","created":{"date-parts":[[2025,1,23]],"date-time":"2025-01-23T04:54:31Z","timestamp":1737608071000},"page":"173","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Structural and Transport Properties of Thin InAs Layers Grown on InxAl1\u2212xAs Metamorphic Buffers"],"prefix":"10.3390","volume":"15","author":[{"ORCID":"https:\/\/orcid.org\/0009-0003-9418-6642","authenticated-orcid":false,"given":"Giulio","family":"Senesi","sequence":"first","affiliation":[{"name":"Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Katarzyna","family":"Skibinska","sequence":"additional","affiliation":[{"name":"Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Alessandro","family":"Paghi","sequence":"additional","affiliation":[{"name":"Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8110-7429","authenticated-orcid":false,"given":"Gaurav","family":"Shukla","sequence":"additional","affiliation":[{"name":"Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Francesco","family":"Giazotto","sequence":"additional","affiliation":[{"name":"Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Fabio","family":"Beltram","sequence":"additional","affiliation":[{"name":"Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1989-5679","authenticated-orcid":false,"given":"Stefan","family":"Heun","sequence":"additional","affiliation":[{"name":"Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6242-9417","authenticated-orcid":false,"given":"Lucia","family":"Sorba","sequence":"additional","affiliation":[{"name":"Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2025,1,23]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Paghi, A., Trupiano, G., de Simoni, G., Arif, O., Sorba, L., and Giazotto, F. 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