{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,6]],"date-time":"2026-10-06T06:41:46Z","timestamp":1791268906117,"version":"4.1.0"},"reference-count":44,"publisher":"MDPI AG","issue":"13","license":[{"start":{"date-parts":[[2025,6,20]],"date-time":"2025-06-20T00:00:00Z","timestamp":1750377600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"National Key R&amp;D Program of China","award":["2023YFB4606300"],"award-info":[{"award-number":["2023YFB4606300"]}]},{"name":"National Key R&amp;D Program of China","award":["62474049"],"award-info":[{"award-number":["62474049"]}]},{"name":"National Key R&amp;D Program of China","award":["21DZ1100800"],"award-info":[{"award-number":["21DZ1100800"]}]},{"name":"National Key R&amp;D Program of China","award":["23ZR1405300"],"award-info":[{"award-number":["23ZR1405300"]}]},{"name":"National Key R&amp;D Program of China","award":["2023CSJG0600"],"award-info":[{"award-number":["2023CSJG0600"]}]},{"name":"National Natural Science Foundation of China","award":["2023YFB4606300"],"award-info":[{"award-number":["2023YFB4606300"]}]},{"name":"National Natural Science Foundation of China","award":["62474049"],"award-info":[{"award-number":["62474049"]}]},{"name":"National Natural Science Foundation of China","award":["21DZ1100800"],"award-info":[{"award-number":["21DZ1100800"]}]},{"name":"National Natural Science Foundation of China","award":["23ZR1405300"],"award-info":[{"award-number":["23ZR1405300"]}]},{"name":"National Natural Science Foundation of China","award":["2023CSJG0600"],"award-info":[{"award-number":["2023CSJG0600"]}]},{"name":"Science and Technology Innovation Plan of Shanghai Science and Technology Commission","award":["2023YFB4606300"],"award-info":[{"award-number":["2023YFB4606300"]}]},{"name":"Science and Technology Innovation Plan of Shanghai Science and Technology Commission","award":["62474049"],"award-info":[{"award-number":["62474049"]}]},{"name":"Science and Technology Innovation Plan of Shanghai Science and Technology Commission","award":["21DZ1100800"],"award-info":[{"award-number":["21DZ1100800"]}]},{"name":"Science and Technology Innovation Plan of Shanghai Science and Technology Commission","award":["23ZR1405300"],"award-info":[{"award-number":["23ZR1405300"]}]},{"name":"Science and Technology Innovation Plan of Shanghai Science and Technology Commission","award":["2023CSJG0600"],"award-info":[{"award-number":["2023CSJG0600"]}]},{"name":"Joint Research Plan of sci-tech innovation community in Yangtze River Delta","award":["2023YFB4606300"],"award-info":[{"award-number":["2023YFB4606300"]}]},{"name":"Joint Research Plan of sci-tech innovation community in Yangtze River Delta","award":["62474049"],"award-info":[{"award-number":["62474049"]}]},{"name":"Joint Research Plan of sci-tech innovation community in Yangtze River Delta","award":["21DZ1100800"],"award-info":[{"award-number":["21DZ1100800"]}]},{"name":"Joint Research Plan of sci-tech innovation community in Yangtze River Delta","award":["23ZR1405300"],"award-info":[{"award-number":["23ZR1405300"]}]},{"name":"Joint Research Plan of sci-tech innovation community in Yangtze River Delta","award":["2023CSJG0600"],"award-info":[{"award-number":["2023CSJG0600"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Nanomaterials"],"abstract":"<jats:p>Silicon oxynitride (SiOxNy, hereafter denoted as SiON) thin films represent an intermediate phase between silicon dioxide (SiO2) and silicon nitride (Si3N4). Through systematic compositional ratio adjustments, the refractive index can be precisely tuned across a wide range from 1.45 to 2.3. However, the underlying mechanism governing the influence of elemental composition on film structural quality remains insufficiently understood. To address this knowledge gap, we systematically investigate the effects of key industrial plasma-enhanced chemical vapor deposition (PECVD) parameters\u2014including precursor gas selection and flow rate ratios\u2014on SiON film properties. Our experimental measurements reveal that stoichiometric SiOxNy (x = y) achieves a minimum surface roughness of 0.18 nm. As oxygen content decreases and nitrogen content increases, progressive replacement of Si-O bonds by Si-N bonds correlates with increased structural defect density within the film matrix. Capacitance\u2013voltage (C-V) characterization demonstrates a corresponding enhancement in device capacitance following these compositional modifications. Recent studies confirm that controlled modulation of film stoichiometry enables precise tailoring of dielectric properties and capacitive behavior, as demonstrated in SiON-based power electronics, thereby advancing applications in related fields.<\/jats:p>","DOI":"10.3390\/nano15130958","type":"journal-article","created":{"date-parts":[[2025,6,20]],"date-time":"2025-06-20T11:23:24Z","timestamp":1750418604000},"page":"958","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":9,"title":["Physical and Electrical Properties of Silicon Nitride Thin Films with Different Nitrogen\u2013Oxygen Ratios"],"prefix":"10.3390","volume":"15","author":[{"given":"Wen-Jie","family":"Chen","sequence":"first","affiliation":[{"name":"Institute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Ningbo 315327, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yang-Chao","family":"Liu","sequence":"additional","affiliation":[{"name":"Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China"},{"name":"Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhen-Yu","family":"Wang","sequence":"additional","affiliation":[{"name":"Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China"},{"name":"Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Lin","family":"Gu","sequence":"additional","affiliation":[{"name":"Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China"},{"name":"Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4147-1944","authenticated-orcid":false,"given":"Yi","family":"Shen","sequence":"additional","affiliation":[{"name":"Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China"},{"name":"Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4175-5437","authenticated-orcid":false,"given":"Hong-Ping","family":"Ma","sequence":"additional","affiliation":[{"name":"Institute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Ningbo 315327, China"},{"name":"Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China"},{"name":"Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2025,6,20]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Kimoto, T., and Cooper, J.A. 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