{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,3]],"date-time":"2026-06-03T19:33:42Z","timestamp":1780515222843,"version":"3.54.1"},"reference-count":73,"publisher":"MDPI AG","issue":"6","license":[{"start":{"date-parts":[[2026,3,18]],"date-time":"2026-03-18T00:00:00Z","timestamp":1773792000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Nanomaterials"],"abstract":"<jats:p>Interlayer-sliding ferroelectricity in van der Waals bilayers enables ultralow-power switching, but practical devices are often limited by contact\/interface scattering and weak coupling between polarization and transport. We propose homophase lateral architectures based on bilayer Janus MoSSe: a 1T\/2H\/1T ferroelectric tunnel homojunction and an H-phase lateral p\u2013i\u2013n photodetector (artificially doped electrode). Metallic 1T electrodes largely eliminate contact barriers and maximize polarization-driven tunneling modulation. Using non-equilibrium Green\u2019s function\u2013density functional theory (Perdew\u2013Burke\u2013Ernzerhof approximation, without explicit spin\u2013orbit coupling), we find that AB to BA sliding reduces the current from the nA range to the pA range, with the minimum current of|IOFF|min = 2.83 pA, yielding giant tunneling electroresistance up to 5.3 \u00d7 104%. Projected local density of states reveals a non-rigid long-range potential redistribution that reshapes the tunneling barrier and opens high-transmission channels. In the p\u2013i\u2013n photodetector, the response is strongly anisotropic and stacking-dependent: AB reaches photocurrent density Jph \u2248 7.2 \u00b5A\u00b7mm\u22122 at 2.6 eV for in-plane light versus \u2248 2.9 \u00b5A\u00b7mm\u22122 at 3.5 eV for out-of-plane, and exceeds BA by 1.5\u20131.8 times due to density of states advantages and Mo-d orbital selection rules. Bilayer Janus MoSSe therefore provides a reconfigurable platform for high-contrast memory and polarization-sensitive photodetection.<\/jats:p>","DOI":"10.3390\/nano16060370","type":"journal-article","created":{"date-parts":[[2026,3,18]],"date-time":"2026-03-18T17:12:26Z","timestamp":1773853946000},"page":"370","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Giant Tunneling Electroresistance and Anisotropic Photoresponse in Sliding Ferroelectric Homojunctions Based on Bilayer Janus MoSSe"],"prefix":"10.3390","volume":"16","author":[{"given":"Huxiao","family":"Yang","sequence":"first","affiliation":[{"name":"School of Wang Zheng Microelectronics, Changzhou University, Changzhou 213164, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8776-3112","authenticated-orcid":false,"given":"Yuehua","family":"Xu","sequence":"additional","affiliation":[{"name":"School of Wang Zheng Microelectronics, Changzhou University, Changzhou 213164, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2026,3,18]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"e2115703118","DOI":"10.1073\/pnas.2115703118","article-title":"Sliding ferroelectricity in 2D van der Waals materials: Related physics and future opportunities","volume":"118","author":"Wu","year":"2021","journal-title":"Proc. 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