{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,16]],"date-time":"2026-03-16T13:40:34Z","timestamp":1773668434013,"version":"3.50.1"},"reference-count":33,"publisher":"MDPI AG","issue":"4","license":[{"start":{"date-parts":[[2023,2,13]],"date-time":"2023-02-13T00:00:00Z","timestamp":1676246400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"Russian Science Foundation","award":["22-19-00535"],"award-info":[{"award-number":["22-19-00535"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Polymers"],"abstract":"<jats:p>The mechanism of charge carrier transport in the indium tin oxide (ITO)\/polymer\/Cu structure is studied, where thin films of copoly(arylene ether ketone) with cardo fluorene moieties are used. This copoly(arylene ether ketone) is non-conjugated polymer which has the properties of electronic switching from the insulating to the highly conductive state. The dependence on the polymer film thickness of such parameters as the potential barrier at the ITO\/polymer interface, the concentration of charge carriers, and their mobility in the polymer is studied for the first time. The study of this system is of interest due to the proven potential of using the synthesized polymer in the contact system of a silicon solar cell with an ITO top layer. The parameters of charge carriers and ITO\/polymer barrier are evaluated based on the analysis of current\u2013voltage characteristics of ITO\/polymer\/Cu structure within the injection current models and the Schottky model. The thickness of the polymer layer varies from 50 nm to 2.1 \u00b5m. The concentration of intrinsic charge carriers increases when decreasing the polymer film thickness. The charge carrier mobility depends irregularly on the thickness, showing a maximum of 9.3 \u00d7 10\u22124 cm2\/V s at 210 nm and a minimum of 4.7 \u00d7 10\u221211 cm2\/V s at 50 nm. The conductivity of polymer films first increases with a decrease in thickness from 2.1 \u00b5m to 210 nm, but then begins to decrease upon transition to the globular structure of the films at smaller thicknesses. The dependence of the barrier height on polymer thickness has a minimum of 0.28 eV for films 100\u2013210 nm thick. The influence of the supramolecular structure and surface charge field of thin polymer films on the transport of charge carriers is discussed.<\/jats:p>","DOI":"10.3390\/polym15040928","type":"journal-article","created":{"date-parts":[[2023,2,13]],"date-time":"2023-02-13T05:59:40Z","timestamp":1676267980000},"page":"928","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":4,"title":["Non-Conjugated Copoly(Arylene Ether Ketone) for the Current-Collecting System of a Solar Cell with Indium Tin Oxide Electrode"],"prefix":"10.3390","volume":"15","author":[{"given":"Alexey N.","family":"Lachinov","sequence":"first","affiliation":[{"name":"Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, 119991 Moscow, Russia"},{"name":"Institute of Molecule and Crystal Physics\u2013Subdivision of the Ufa Federal Research Centre of the Russian Academy of Sciences, 450075 Ufa, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7081-1947","authenticated-orcid":false,"given":"Danfis D.","family":"Karamov","sequence":"additional","affiliation":[{"name":"Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, 119991 Moscow, Russia"},{"name":"Institute of Molecule and Crystal Physics\u2013Subdivision of the Ufa Federal Research Centre of the Russian Academy of Sciences, 450075 Ufa, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2729-4382","authenticated-orcid":false,"given":"Azat F.","family":"Galiev","sequence":"additional","affiliation":[{"name":"Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, 119991 Moscow, Russia"},{"name":"Institute of Molecule and Crystal Physics\u2013Subdivision of the Ufa Federal Research Centre of the Russian Academy of Sciences, 450075 Ufa, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Sergey N.","family":"Salazkin","sequence":"additional","affiliation":[{"name":"Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, 119991 Moscow, Russia"},{"name":"Nesmeyanov Institute of Organoelement Compounds of the Russian Academy of Sciences, 119334 Moscow, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Vera V.","family":"Shaposhnikova","sequence":"additional","affiliation":[{"name":"Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, 119991 Moscow, Russia"},{"name":"Nesmeyanov Institute of Organoelement Compounds of the Russian Academy of Sciences, 119334 Moscow, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Tatiana N.","family":"Kost","sequence":"additional","affiliation":[{"name":"Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, 119991 Moscow, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Alla B.","family":"Chebotareva","sequence":"additional","affiliation":[{"name":"Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, 119991 Moscow, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2023,2,13]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"54","DOI":"10.1016\/j.solener.2018.01.074","article-title":"Low-temperature processes for passivation and metallization of high efficiency crystalline silicon solar cells","volume":"175","author":"Descoeudres","year":"2018","journal-title":"Sol. 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