{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,6]],"date-time":"2025-11-06T00:44:56Z","timestamp":1762389896392,"version":"build-2065373602"},"reference-count":61,"publisher":"MDPI AG","issue":"2","license":[{"start":{"date-parts":[[2024,1,12]],"date-time":"2024-01-12T00:00:00Z","timestamp":1705017600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"Indian Council for Medical Research, Government of India, India","award":["5\/3\/8\/60-ITR","SERB\/MTR\/2020\/000058"],"award-info":[{"award-number":["5\/3\/8\/60-ITR","SERB\/MTR\/2020\/000058"]}]},{"name":"Science and Engineering Research Board (SERB) of the Department of Science and Technology (DST), Government of India, India","award":["5\/3\/8\/60-ITR","SERB\/MTR\/2020\/000058"],"award-info":[{"award-number":["5\/3\/8\/60-ITR","SERB\/MTR\/2020\/000058"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Polymers"],"abstract":"<jats:p>Resistive switching memories are among the emerging next-generation technologies that are possible candidates for in-memory and neuromorphic computing. In this report, resistive memory-switching behavior in solution-processed trans, trans-1,4-bis-(2-(2-naphthyl)-2-(butoxycarbonyl)-vinyl) benzene\u2013PVA-composite-based aryl acrylate on an ITO-coated PET device was studied. A sandwich configuration was selected, with silver (Ag) serving as a top contact and trans, trans-1,4-bis-(2-(2-naphthyl)-2-(butoxycarbonyl)-vinyl) benzene\u2013PVA-composite-based aryl acrylate and ITO-PET serving as a bottom contact. The current\u2013voltage (I\u2013V) characteristics showed hysteresis behavior and non-zero crossing owing to voltages sweeping from positive to negative and vice versa. The results showed non-zero crossing in the devices\u2019 current\u2013voltage (I\u2013V) characteristics due to the nanobattery effect or resistance, capacitive, and inductive effects. The device also displayed a negative differential resistance (NDR) effect. Non-volatile storage was feasible with non-zero crossing due to the exhibition of resistive switching behavior. The sweeping range was \u221210 V to +10 V. These devices had two distinct states: \u2018ON\u2019 and \u2018OFF\u2019. The ON\/OFF ratios of the devices were 14 and 100 under stable operating conditions. The open-circuit voltages (Voc) and short-circuit currents (Isc) corresponding to memristor operation were explained. The DC endurance was stable. Ohmic conduction and direct tunneling mechanisms with traps explained the charge transport model governing the resistive switching behavior. This work gives insight into data storage in terms of a new conception of electronic devices based on facile and low-temperature processed material composites for emerging computational devices.<\/jats:p>","DOI":"10.3390\/polym16020218","type":"journal-article","created":{"date-parts":[[2024,1,12]],"date-time":"2024-01-12T03:54:34Z","timestamp":1705031674000},"page":"218","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Resistive Memory-Switching Behavior in Solution-Processed Trans, trans-1,4-bis-(2-(2-naphthyl)-2-(butoxycarbonyl)-vinyl) Benzene\u2013PVA-Composite-Based Aryl Acrylate on ITO-Coated PET"],"prefix":"10.3390","volume":"16","author":[{"given":"Rachana","family":"Kamath","sequence":"first","affiliation":[{"name":"Department of Electronics and Communication Engineering, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Parantap","family":"Sarkar","sequence":"additional","affiliation":[{"name":"Manipal Centre for Natural Sciences, Manipal Academy of Higher Education, Dr. T. M. A. Pai Planetarium Building, Madhav Nagar, Manipal 576104, Karnataka, India"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Sindhoora Kaniyala","family":"Melanthota","sequence":"additional","affiliation":[{"name":"Department of Biophysics, Manipal School of Life Sciences, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6246-2196","authenticated-orcid":false,"given":"Rajib","family":"Biswas","sequence":"additional","affiliation":[{"name":"Department of Physics, Tezpur University, Tezpur 784028, Assam, India"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8068-6484","authenticated-orcid":false,"given":"Nirmal","family":"Mazumder","sequence":"additional","affiliation":[{"name":"Department of Biophysics, Manipal School of Life Sciences, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shounak","family":"De","sequence":"additional","affiliation":[{"name":"Department of Electronics and Communication Engineering, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2024,1,12]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Pelka, J., and Baldi, L. 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