{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,17]],"date-time":"2025-10-17T13:52:34Z","timestamp":1760709154179,"version":"build-2065373602"},"reference-count":15,"publisher":"MDPI AG","issue":"10","license":[{"start":{"date-parts":[[2016,9,29]],"date-time":"2016-09-29T00:00:00Z","timestamp":1475107200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"DPT-HAMIT"},{"name":"Turkish Science, Industry and Technology Ministry"},{"DOI":"10.13039\/501100004412","name":"Turkish Academy of Sciences","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100004412","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Metal oxide gas sensors with integrated micro-hotplate structures are widely used in the industry and they are still being investigated and developed. Metal oxide gas sensors have the advantage of being sensitive to a wide range of organic and inorganic volatile compounds, although they lack selectivity. To introduce selectivity, the operating temperature of a single sensor is swept, and the measurements are fed to a discriminating algorithm. The efficiency of those data processing methods strongly depends on temperature uniformity across the active area of the sensor. To achieve this, hot plate structures with complex resistor geometries have been designed and additional heat-spreading structures have been introduced. In this work we designed and fabricated a metal oxide gas sensor integrated with a simple square planar indium tin oxide (ITO) heating element, by using conventional micromachining and thin-film deposition techniques. Power consumption\u2013dependent surface temperature measurements were performed. A 420 \u00b0C working temperature was achieved at 120 mW power consumption. Temperature distribution uniformity was measured and a 17 \u00b0C difference between the hottest and the coldest points of the sensor at an operating temperature of 290 \u00b0C was achieved. Transient heat-up and cool-down cycle durations are measured as 40 ms and 20 ms, respectively.<\/jats:p>","DOI":"10.3390\/s16101612","type":"journal-article","created":{"date-parts":[[2016,9,29]],"date-time":"2016-09-29T09:54:50Z","timestamp":1475142890000},"page":"1612","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":13,"title":["Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors"],"prefix":"10.3390","volume":"16","author":[{"given":"M.","family":"\u00c7ak\u0131r","sequence":"first","affiliation":[{"name":"Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey"},{"name":"Department of Nanotechnology and Nanomedicine, Hacettepe University, Ankara 06800, Turkey"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Deniz","family":"\u00c7al\u0131\u015fkan","sequence":"additional","affiliation":[{"name":"Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bayram","family":"B\u00fct\u00fcn","sequence":"additional","affiliation":[{"name":"Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ekmel","family":"\u00d6zbay","sequence":"additional","affiliation":[{"name":"Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey"},{"name":"Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara 06800, Turkey"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2016,9,29]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"2088","DOI":"10.3390\/s100302088","article-title":"Metal Oxide Gas Sensors: Sensitivity and Influencing Factors","volume":"10","author":"Wang","year":"2010","journal-title":"Sensors"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"161108","DOI":"10.1063\/1.4899297","article-title":"Low dark current and high speed ZnO metal\u2013semiconductor\u2013metal photodetector on SiO2\/Si substrate","volume":"105","year":"2014","journal-title":"Appl. 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Actuators B Chem."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/16\/10\/1612\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T19:32:04Z","timestamp":1760211124000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/16\/10\/1612"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,9,29]]},"references-count":15,"journal-issue":{"issue":"10","published-online":{"date-parts":[[2016,10]]}},"alternative-id":["s16101612"],"URL":"https:\/\/doi.org\/10.3390\/s16101612","relation":{},"ISSN":["1424-8220"],"issn-type":[{"type":"electronic","value":"1424-8220"}],"subject":[],"published":{"date-parts":[[2016,9,29]]}}}