{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,5]],"date-time":"2026-09-05T14:17:02Z","timestamp":1788617822371,"version":"build-2803163510"},"reference-count":28,"publisher":"MDPI AG","issue":"15","license":[{"start":{"date-parts":[[2022,7,27]],"date-time":"2022-07-27T00:00:00Z","timestamp":1658880000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Nano-sized SmFeO3 particles are prepared by the pyrolysis of heteronuclear cyano-complex, Sm[Fe(CN)6]\u00b74H2O at a temperature of 600 \u00b0C in ozone. The low temperature decomposition followed in ozone successfully yielded fine particles with a high specific surface area of 20.0 m3\/g (sample A). The fine particles were classified into further smaller particles with a unimodal size distribution and this process yielded a high specific surface area of 26.0 m3\/g (sample B). These semiconducting powders were deposited on a sensor electrode by electrophoretic deposition (EPD) and tested on their sensing properties to VOCs. The sensors consisting of samples A and B both showed good responses to ethanol at 285 and 320 \u00b0C. The sensor with sample B showed extraordinarily good selectivity of ethanol for toluene at 320 \u00b0C. This could be because the detection film of sample B with moderately grown particles selectively reduced the reaction activity of toluene. The sensor with sample B also exhibited good selectivity of ethanol for hexane and dichloromethane.<\/jats:p>","DOI":"10.3390\/s22155616","type":"journal-article","created":{"date-parts":[[2022,7,28]],"date-time":"2022-07-28T03:21:16Z","timestamp":1658978476000},"page":"5616","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":6,"title":["VOC Detections by p-Type Semiconducting Sensors Using Nano-Sized SmFeO3 Particles"],"prefix":"10.3390","volume":"22","author":[{"given":"Masami","family":"Mori","sequence":"first","affiliation":[{"name":"Graduate School of Science and Engineering, Ehime University, Matsuyama 790-8577, Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ayumu","family":"Noguchi","sequence":"additional","affiliation":[{"name":"Graduate School of Science and Engineering, Ehime University, Matsuyama 790-8577, Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yoshiteru","family":"Itagaki","sequence":"additional","affiliation":[{"name":"Graduate School of Science and Engineering, Ehime University, Matsuyama 790-8577, Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2022,7,27]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"1502","DOI":"10.1021\/ac60191a001","article-title":"A New Detector for Gaseous Components Using Semiconductive Thin Films","volume":"34","author":"Seiyama","year":"1962","journal-title":"Anal. 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