{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,21]],"date-time":"2026-08-21T04:26:24Z","timestamp":1787286384852,"version":"build-2736575974"},"reference-count":31,"publisher":"MDPI AG","issue":"16","license":[{"start":{"date-parts":[[2026,8,19]],"date-time":"2026-08-19T00:00:00Z","timestamp":1787097600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"the Fundamental Research Funds for the Central  Universities","award":["xtr062025004"],"award-info":[{"award-number":["xtr062025004"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Optical MOS solid-state relays provide electrical isolation and favorable switching performance, making them suitable as isolated switching interfaces for optoelectronic sensors used in radiation monitoring systems, high-energy physics accelerator monitoring systems, and aerospace electronic equipment. However, to the best of our knowledge, the reliability of this device under atmospheric-like neutron irradiation has not been systematically investigated. In this study, the neutron-induced degradation characteristics and potential physical mechanisms of a commercial optical MOS solid-state relay were systematically investigated through electrical characterization, Sentaurus TCAD mixed-mode simulation, and post-irradiation annealing experiments. Particular attention was paid to the possible internal coupling relationship between degradation of the internal photoelectric conversion unit and the increase in the off-state leakage current of the output-side power MOSFET.<\/jats:p>","DOI":"10.3390\/s26165259","type":"journal-article","created":{"date-parts":[[2026,8,19]],"date-time":"2026-08-19T14:07:34Z","timestamp":1787148454000},"page":"5259","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Study of Neutron Radiation Effects in Optical MOS Solid-State Relays"],"prefix":"10.3390","volume":"26","author":[{"ORCID":"https:\/\/orcid.org\/0009-0009-9777-3352","authenticated-orcid":false,"given":"Zijie","family":"He","sequence":"first","affiliation":[{"name":"School of Nuclear Science and Technology, Xi\u2019an Jiaotong University, Xi\u2019an 710049, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hao","family":"Yu","sequence":"additional","affiliation":[{"name":"School of Nuclear Science and Technology, Xi\u2019an Jiaotong University, Xi\u2019an 710049, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chengxiang","family":"Han","sequence":"additional","affiliation":[{"name":"School of Nuclear Science and Technology, Xi\u2019an Jiaotong University, Xi\u2019an 710049, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9307-8859","authenticated-orcid":false,"given":"Zhigang","family":"Peng","sequence":"additional","affiliation":[{"name":"School of Nuclear Science and Technology, Xi\u2019an Jiaotong University, Xi\u2019an 710049, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Baolong","family":"Ma","sequence":"additional","affiliation":[{"name":"School of Nuclear Science and Technology, Xi\u2019an Jiaotong University, Xi\u2019an 710049, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0761-9426","authenticated-orcid":false,"given":"Pei","family":"Li","sequence":"additional","affiliation":[{"name":"School of Nuclear Science and Technology, Xi\u2019an Jiaotong University, Xi\u2019an 710049, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7938-2907","authenticated-orcid":false,"given":"Chaohui","family":"He","sequence":"additional","affiliation":[{"name":"School of Nuclear Science and Technology, Xi\u2019an Jiaotong University, Xi\u2019an 710049, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2026,8,19]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Kumar, A., and Srivastava, V.M. 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