{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,31]],"date-time":"2026-03-31T14:13:03Z","timestamp":1774966383759,"version":"3.50.1"},"reference-count":71,"publisher":"MDPI AG","issue":"2","license":[{"start":{"date-parts":[[2021,2,8]],"date-time":"2021-02-08T00:00:00Z","timestamp":1612742400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100000830","name":"North Atlantic Treaty Organization","doi-asserted-by":"publisher","award":["SPS G5674"],"award-info":[{"award-number":["SPS G5674"]}],"id":[{"id":"10.13039\/501100000830","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001871","name":"Funda\u00e7\u00e3o para a Ci\u00eancia e a Tecnologia","doi-asserted-by":"publisher","award":["UIDB\/50025\/2020"],"award-info":[{"award-number":["UIDB\/50025\/2020"]}],"id":[{"id":"10.13039\/501100001871","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001871","name":"Funda\u00e7\u00e3o para a Ci\u00eancia e a Tecnologia","doi-asserted-by":"publisher","award":["UIDP\/50025\/2020"],"award-info":[{"award-number":["UIDP\/50025\/2020"]}],"id":[{"id":"10.13039\/501100001871","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Crystals"],"abstract":"<jats:p>This paper presents a theoretical study of the electronic and dynamic properties of silicon vacancies and self-interstitials in 4H\u2013SiC using hybrid density functional methods. Several pending issues, mostly related to the thermal stability of this defect, are addressed. The silicon site vacancy and the carbon-related antisite-vacancy (CAV) pair are interpreted as a unique and bistable defect. It possesses a metastable negative-U neutral state, which \u201cdisproportionates\u201d into VSi+ or VSi\u2212, depending on the location of the Fermi level. The vacancy introduces a (\u2212\/+) transition, calculated at Ec\u22121.25\u00a0eV, which determines a temperature threshold for the annealing of VSi into CAV in n-type material due to a Fermi level crossing effect. Analysis of a configuration coordinate diagram allows us to conclude that VSi anneals out in two stages\u2014at low temperatures (T\u2272600 \u00b0C) via capture of a mobile species (e.g., self-interstitials) and at higher temperatures (T\u22731200 \u00b0C) via dissociation into VC and CSi defects. The Si interstitial (Sii) is also a negative-U defect, with metastable q=+1 and q=+3 states. These are the only paramagnetic states of the defect, and maybe that explains why it escaped detection, even in p-type material where the migration barriers are at least 2.7 eV high.<\/jats:p>","DOI":"10.3390\/cryst11020167","type":"journal-article","created":{"date-parts":[[2021,2,9]],"date-time":"2021-02-09T04:18:50Z","timestamp":1612844330000},"page":"167","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":30,"title":["Theory of the Thermal Stability of Silicon Vacancies and Interstitials in 4H\u2013SiC"],"prefix":"10.3390","volume":"11","author":[{"given":"Jos\u00e9","family":"Coutinho","sequence":"first","affiliation":[{"name":"I3N, Department of Physics, University of Aveiro, Campus Santiago, 3810-193 Aveiro, Portugal"}]}],"member":"1968","published-online":{"date-parts":[[2021,2,8]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"040103","DOI":"10.7567\/JJAP.54.040103","article-title":"Material Science and Device Physics in SiC Technology for High-Voltage Power Devices","volume":"54","author":"Kimoto","year":"2015","journal-title":"Jpn. J. Appl. Phys."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"8193","DOI":"10.1109\/TIE.2017.2652401","article-title":"Review of Silicon Carbide Power Devices and Their Applications","volume":"64","author":"She","year":"2017","journal-title":"IEEE Trans. Ind. Electron."},{"key":"ref_3","doi-asserted-by":"crossref","unstructured":"Saddow, S.E., and Via, F.L. (2015). Silicon Carbide for Novel Quantum Technology Devices. Advanced Silicon Carbide Devices and Processing, InTech.","DOI":"10.5772\/59734"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"034502","DOI":"10.1088\/1361-6633\/aa5171","article-title":"A Review on Single Photon Sources in Silicon Carbide","volume":"80","author":"Lohrmann","year":"2017","journal-title":"Rep. Prog. Phys."},{"key":"ref_5","unstructured":"Ruddy, F.H., Seidel, J.G., Chen, H., Dulloo, A.R., and Ryu, S.-H. (2005, January 23\u201329). High-Resolution Alpha-Particle Spectrometry Using Silicon Carbide Semiconductor Detectors. Proceedings of the IEEE Nuclear Science Symposium Conference Record, Fajardo, Puerto Rico."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"164793","DOI":"10.1016\/j.nima.2020.164793","article-title":"Silicon Carbide Diodes for Neutron Detection","volume":"986","author":"Coutinho","year":"2021","journal-title":"Nucl. Instrum. Methods Phys. Res. Sect. A Accel. Spectrometers Detect. Assoc. Equip."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"415","DOI":"10.1016\/S0168-9002(02)01987-3","article-title":"The Thermal Neutron Response of Miniature Silicon Carbide Semiconductor Detectors","volume":"498","author":"Dulloo","year":"2003","journal-title":"Nucl. Instrum. Methods Phys. Res. Sect. A Accel. Spectrometers Detect. Assoc. Equip."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"1491","DOI":"10.1109\/TNS.2016.2522921","article-title":"Fast Neutron Detection With 4H-SiC Based Diode Detector up to 500 \u00b0C Ambient Temperature","volume":"63","author":"Szalkai","year":"2016","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"323001","DOI":"10.1088\/1361-648X\/ab8091","article-title":"Characterisation of Negative-U Defects in Semiconductors","volume":"32","author":"Coutinho","year":"2020","journal-title":"J. Phys. Condens. Matter"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"161559","DOI":"10.1063\/1.5011327","article-title":"Tutorial: Junction Spectroscopy Techniques and Deep-Level Defects in Semiconductors","volume":"123","author":"Peaker","year":"2018","journal-title":"J. Appl. Phys."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"199","DOI":"10.1002\/1521-396X(199707)162:1<199::AID-PSSA199>3.0.CO;2-0","article-title":"Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy","volume":"162","author":"Dalibor","year":"1997","journal-title":"Phys. Status Solidi (A)"},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"6155","DOI":"10.1063\/1.364397","article-title":"Deep Level Defects in Electron-Irradiated 4H SiC Epitaxial Layers","volume":"81","author":"Hemmingsson","year":"1997","journal-title":"J. Appl. Phys."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"R10119","DOI":"10.1103\/PhysRevB.58.R10119","article-title":"Negative-U Centers in 4H Silicon Carbide","volume":"58","author":"Hemmingsson","year":"1998","journal-title":"Phys. Rev. B"},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"261","DOI":"10.4028\/www.scientific.net\/MSF.679-680.261","article-title":"Large-Scale Electronic Structure Calculations of Vacancies in 4H-SiC Using the Heyd-Scuseria-Ernzerhof Screened Hybrid Density Functional","volume":"679\u2013680","author":"Hornos","year":"2011","journal-title":"MSF"},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"187603","DOI":"10.1103\/PhysRevLett.109.187603","article-title":"Negative-U System of Carbon Vacancy in 4H-SiC","volume":"109","author":"Son","year":"2012","journal-title":"Phys. Rev. Lett."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"174105","DOI":"10.1103\/PhysRevB.96.174105","article-title":"Theory of the Carbon Vacancy in 4H-SiC: Crystal Field and Pseudo-Jahn-Teller Effects","volume":"96","author":"Coutinho","year":"2017","journal-title":"Phys. Rev. B"},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"161597","DOI":"10.1063\/1.5011124","article-title":"Double Negatively Charged Carbon Vacancy at the H- and k-Sites in 4H-SiC: Combined Laplace-DLTS and DFT Study","volume":"123","author":"Capan","year":"2018","journal-title":"J. Appl. Phys."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"252102","DOI":"10.1063\/1.4938242","article-title":"Elimination of Carbon Vacancies in 4H-SiC Employing Thermodynamic Equilibrium Conditions at Moderate Temperatures","volume":"107","author":"Ayedh","year":"2015","journal-title":"Appl. Phys. Lett."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"184111","DOI":"10.1103\/PhysRevB.102.184111","article-title":"Conversion Pathways of Primary Defects by Annealing in Proton-Irradiated n-Type 4H-SiC","volume":"102","author":"Karsthof","year":"2020","journal-title":"Phys. Rev. B"},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"145501","DOI":"10.1103\/PhysRevLett.96.145501","article-title":"Identification of the Carbon Antisite-Vacancy Pair in 4H-SiC","volume":"96","author":"Umeda","year":"2006","journal-title":"Phys. Rev. Lett."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"245202","DOI":"10.1103\/PhysRevB.80.245202","article-title":"Photoluminescence Study of the Carbon Antisite-Vacancy Pair in 4H- and 6H-SiC","volume":"80","author":"Steeds","year":"2009","journal-title":"Phys. Rev. B"},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"121201","DOI":"10.1103\/PhysRevB.91.121201","article-title":"Spin and Photophysics of Carbon-Antisite Vacancy Defect in 4H Silicon Carbide: A Potential Quantum Bit","volume":"91","author":"Abrikosov","year":"2015","journal-title":"Phys. Rev. B"},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"235202","DOI":"10.1103\/PhysRevB.69.235202","article-title":"Ab Initio Study of the Annealing of Vacancies and Interstitials in Cubic SiC: Vacancy-Interstitial Recombination and Aggregation of Carbon Interstitials","volume":"69","author":"Bockstedte","year":"2004","journal-title":"Phys. Rev. B"},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"013705","DOI":"10.1063\/1.3528124","article-title":"Major Deep Levels with the Same Microstructures Observed in N-Type 4H\u2013SiC and 6H\u2013SiC","volume":"109","author":"Sasaki","year":"2011","journal-title":"J. Appl. Phys."},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"112106","DOI":"10.1063\/1.4796141","article-title":"Investigation on Origin of Z1\/2 Center in SiC by Deep Level Transient Spectroscopy and Electron Paramagnetic Resonance","volume":"102","author":"Kawahara","year":"2013","journal-title":"Appl. Phys. Lett."},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"4909","DOI":"10.1063\/1.1778819","article-title":"Deep Levels Created by Low Energy Electron Irradiation in 4H-SiC","volume":"96","author":"Storasta","year":"2004","journal-title":"J. Appl. Phys."},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"043518","DOI":"10.1063\/1.2009816","article-title":"Annealing Behavior between Room Temperature and 2000 \u00b0C of Deep Level Defects in Electron-Irradiated n-Type 4H Silicon Carbide","volume":"98","author":"Alfieri","year":"2005","journal-title":"J. Appl. Phys."},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"103703","DOI":"10.1063\/1.3586042","article-title":"Annealing Behavior of the EB-Centers and M-Center in Low-Energy Electron Irradiated n-Type 4H-SiC","volume":"109","author":"Beyer","year":"2011","journal-title":"J. Appl. Phys."},{"key":"ref_29","first-page":"443","article-title":"Implantation Temperature Dependent Deep Level Defects in 4H-SiC","volume":"353\u2013356","author":"Storasta","year":"2001","journal-title":"MSF"},{"key":"ref_30","doi-asserted-by":"crossref","first-page":"4728","DOI":"10.1063\/1.1689731","article-title":"Electrically Active Defects in Irradiated 4H-SiC","volume":"95","author":"David","year":"2004","journal-title":"J. Appl. Phys."},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"225","DOI":"10.4028\/www.scientific.net\/MSF.679-680.225","article-title":"Defects in SiC: Theory","volume":"679\u2013680","author":"Gali","year":"2011","journal-title":"MSF"},{"key":"ref_32","doi-asserted-by":"crossref","first-page":"111","DOI":"10.1038\/s41534-019-0227-y","article-title":"Electrical Charge State Identification and Control for the Silicon Vacancy in 4H-SiC","volume":"5","author":"Bathen","year":"2019","journal-title":"NPJ Quantum Inf."},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"194305","DOI":"10.1063\/1.4832457","article-title":"Formation and Annealing Behaviors of Qubit Centers in 4H-SiC from First Principles","volume":"114","author":"Wang","year":"2013","journal-title":"J. Appl. Phys."},{"key":"ref_34","doi-asserted-by":"crossref","first-page":"033701","DOI":"10.1063\/1.2160708","article-title":"Diffusion Length and Junction Spectroscopy Analysis of Low-Temperature Annealing of Electron Irradiation-Induced Deep Levels in 4H-SiC","volume":"99","author":"Castaldini","year":"2006","journal-title":"J. Appl. Phys."},{"key":"ref_35","doi-asserted-by":"crossref","first-page":"1900312","DOI":"10.1002\/pssa.201900312","article-title":"Radiation Defects Created in N-Type 4H-SiC by Electron Irradiation in the Energy Range of 1\u201310 MeV","volume":"216","author":"Hazdra","year":"2019","journal-title":"Phys. Status Solidi A"},{"key":"ref_36","doi-asserted-by":"crossref","first-page":"465703","DOI":"10.1088\/1361-648X\/abaeaf","article-title":"Isothermal Annealing Study of the EH1 and EH3 Levels in N-Type 4H-SiC","volume":"32","author":"Alfieri","year":"2020","journal-title":"J. Phys. Condens. Matter"},{"key":"ref_37","doi-asserted-by":"crossref","first-page":"475701","DOI":"10.1088\/1361-648X\/aa908c","article-title":"Deep Level Defects in 4H-SiC Introduced by Ion Implantation: The Role of Single Ion Regime","volume":"29","author":"Siegele","year":"2017","journal-title":"J. Phys. Condens. Matter"},{"key":"ref_38","doi-asserted-by":"crossref","first-page":"224","DOI":"10.1016\/j.nimb.2020.07.005","article-title":"Influence of Neutron Radiation on Majority and Minority Carrier Traps in N-Type 4H-SiC","volume":"478","author":"Capan","year":"2020","journal-title":"Nucl. Instrum. Methods Phys. Res. Sect. B Beam Interact. Mater. Atoms"},{"key":"ref_39","doi-asserted-by":"crossref","unstructured":"Brodar, T., Bakra\u010d, L., Capan, I., Ohshima, T., Snoj, L., Radulovi\u0107, V., and Pastuovi\u0107, \u017d. (2020). Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation. Crystals, 10.","DOI":"10.3390\/cryst10090845"},{"key":"ref_40","doi-asserted-by":"crossref","first-page":"1704","DOI":"10.1063\/1.1651656","article-title":"Bistable Defect in Mega-Electron-Volt Proton Implanted 4H Silicon Carbide","volume":"84","author":"Martin","year":"2004","journal-title":"Appl. Phys. Lett."},{"key":"ref_41","doi-asserted-by":"crossref","first-page":"085208","DOI":"10.1103\/PhysRevB.72.085208","article-title":"Capacitance Transient Study of the Metastable M Center in n-Type 4 H-Si C","volume":"72","author":"Nielsen","year":"2005","journal-title":"Phys. Rev. B"},{"key":"ref_42","doi-asserted-by":"crossref","first-page":"104103","DOI":"10.1103\/PhysRevB.98.104103","article-title":"Energetics and Kinetics of Vacancy Defects in 4 H-SiC","volume":"98","author":"Defo","year":"2018","journal-title":"Phys. Rev. B"},{"key":"ref_43","doi-asserted-by":"crossref","first-page":"R1","DOI":"10.1002\/(SICI)1521-3951(200002)217:2<R1::AID-PSSB99991>3.0.CO;2-3","article-title":"Metastability of the Neutral Silicon Vacancy in 4H-SiC","volume":"217","author":"Rauls","year":"2000","journal-title":"Phys. Status Solidi (B)"},{"key":"ref_44","doi-asserted-by":"crossref","first-page":"6203","DOI":"10.1088\/0953-8984\/13\/28\/305","article-title":"Comprehensive Ab Initio Study of Properties of Monovacancies and Antisites in 4H-SiC","volume":"13","author":"Torpo","year":"2001","journal-title":"J. Phys. Condens. Matter"},{"key":"ref_45","doi-asserted-by":"crossref","first-page":"63","DOI":"10.1016\/j.nimb.2013.09.050","article-title":"Electronic Structure Calculations of Positron Lifetimes in SiC: Self-Consistent Schemes and Relaxation Effect","volume":"327","author":"Wiktor","year":"2014","journal-title":"Nucl. Instrum. Methods Phys. Res. Sect. B Beam Interact. Mater. Atoms"},{"key":"ref_46","doi-asserted-by":"crossref","first-page":"085702","DOI":"10.1063\/1.5140692","article-title":"First-Principles Study of Electronic and Diffusion Properties of Intrinsic Defects in 4H-SiC","volume":"127","author":"Yan","year":"2020","journal-title":"J. Appl. Phys."},{"key":"ref_47","doi-asserted-by":"crossref","first-page":"014103","DOI":"10.1103\/PhysRevB.100.014103","article-title":"Anisotropic and Plane-Selective Migration of the Carbon Vacancy in SiC: Theory and Experiment","volume":"100","author":"Bathen","year":"2019","journal-title":"Phys. Rev. B"},{"key":"ref_48","doi-asserted-by":"crossref","first-page":"558","DOI":"10.1103\/PhysRevB.47.558","article-title":"Ab Initio Molecular Dynamics for Liquid Metals","volume":"47","author":"Kresse","year":"1993","journal-title":"Phys. Rev. B"},{"key":"ref_49","doi-asserted-by":"crossref","first-page":"14251","DOI":"10.1103\/PhysRevB.49.14251","article-title":"Ab Initio Molecular-Dynamics Simulation of the Liquid-Metal\u2013Amorphous-Semiconductor Transition in Germanium","volume":"49","author":"Kresse","year":"1994","journal-title":"Phys. Rev. B"},{"key":"ref_50","doi-asserted-by":"crossref","first-page":"11169","DOI":"10.1103\/PhysRevB.54.11169","article-title":"Efficient Iterative Schemes for Ab Initio Total-Energy Calculations Using a Plane-Wave Basis Set","volume":"54","author":"Kresse","year":"1996","journal-title":"Phys. Rev. B"},{"key":"ref_51","doi-asserted-by":"crossref","first-page":"15","DOI":"10.1016\/0927-0256(96)00008-0","article-title":"Efficiency of Ab-Initio Total Energy Calculations for Metals and Semiconductors Using a Plane-Wave Basis Set","volume":"6","author":"Kresse","year":"1996","journal-title":"Comput. Mater. Sci."},{"key":"ref_52","doi-asserted-by":"crossref","first-page":"8207","DOI":"10.1063\/1.1564060","article-title":"Hybrid Functionals Based on a Screened Coulomb Potential","volume":"118","author":"Heyd","year":"2003","journal-title":"J. Chem. Phys."},{"key":"ref_53","doi-asserted-by":"crossref","first-page":"17953","DOI":"10.1103\/PhysRevB.50.17953","article-title":"Projector Augmented-Wave Method","volume":"50","year":"1994","journal-title":"Phys. Rev. B"},{"key":"ref_54","doi-asserted-by":"crossref","first-page":"3865","DOI":"10.1103\/PhysRevLett.77.3865","article-title":"Generalized Gradient Approximation Made Simple","volume":"77","author":"Perdew","year":"1996","journal-title":"Phys. Rev. Lett."},{"key":"ref_55","doi-asserted-by":"crossref","first-page":"015008","DOI":"10.1088\/2516-1075\/aafc4b","article-title":"Can We Rely on Hybrid-DFT Energies of Solid-State Problems with Local-DFT Geometries?","volume":"1","author":"Gouveia","year":"2019","journal-title":"Electron. Struct."},{"key":"ref_56","doi-asserted-by":"crossref","first-page":"193","DOI":"10.1016\/0021-9614(70)90083-2","article-title":"The Enthalpy of Formation of Silicon Carbide by Fluorine Bomb Calorimetry","volume":"2","author":"Greenberg","year":"1970","journal-title":"J. Chem. Thermodyn."},{"key":"ref_57","doi-asserted-by":"crossref","first-page":"016402","DOI":"10.1103\/PhysRevLett.102.016402","article-title":"Fully Ab Initio Finite-Size Corrections for Charged-Defect Supercell Calculations","volume":"102","author":"Freysoldt","year":"2009","journal-title":"Phys. Rev. Lett."},{"key":"ref_58","doi-asserted-by":"crossref","first-page":"9901","DOI":"10.1063\/1.1329672","article-title":"A Climbing Image Nudged Elastic Band Method for Finding Saddle Points and Minimum Energy Paths","volume":"113","author":"Henkelman","year":"2000","journal-title":"J. Chem. Phys."},{"key":"ref_59","unstructured":"Mattausch, A. (2005). Ab Initio-Theory of Point Defects and Defect Complexes in SiC. [Doctoral Thesis, Friedrich-Alexander-Universit\u00e4t (FAU)]."},{"key":"ref_60","doi-asserted-by":"crossref","unstructured":"Sze, S.M., and Ng, K.K. (2006). Physics of Semiconductor Devices, John Wiley & Sons, Inc.","DOI":"10.1002\/0470068329"},{"key":"ref_61","first-page":"151","article-title":"Nature of the Point Defects Generated during the Diffusion of Acceptor Impurities in Silicon Carbide","volume":"26","author":"Konstantinov","year":"1992","journal-title":"Soviet Phys. Semicond."},{"key":"ref_62","doi-asserted-by":"crossref","first-page":"331","DOI":"10.1039\/B614390C","article-title":"Understanding the Kinetics of Spin-Forbidden Chemical Reactions","volume":"9","author":"Harvey","year":"2007","journal-title":"Phys. Chem. Chem. Phys."},{"key":"ref_63","doi-asserted-by":"crossref","first-page":"205201","DOI":"10.1103\/PhysRevB.68.205201","article-title":"Ab Initio Study of the Migration of Intrinsic Defects in 3C-SiC","volume":"68","author":"Bockstedte","year":"2003","journal-title":"Phys. Rev. B"},{"key":"ref_64","doi-asserted-by":"crossref","first-page":"2271","DOI":"10.1080\/14786430903055184","article-title":"First-Principles Study of Neutral Silicon Interstitials in 3C- and 4H-SiC","volume":"89","author":"Liao","year":"2009","journal-title":"Philos. Mag."},{"key":"ref_65","doi-asserted-by":"crossref","first-page":"269","DOI":"10.4028\/www.scientific.net\/MSF.778-780.269","article-title":"Minority Carrier Transient Spectroscopy of As-Grown, Electron Irradiated and Thermally Oxidized p-Type 4H-SiC","volume":"778\u2013780","author":"Alfieri","year":"2014","journal-title":"MSF"},{"key":"ref_66","doi-asserted-by":"crossref","first-page":"8469","DOI":"10.1063\/1.1751229","article-title":"Self-Diffusion of 12C and 13C in Intrinsic 4H-SiC","volume":"95","author":"Linnarsson","year":"2004","journal-title":"J. Appl. Phys."},{"key":"ref_67","doi-asserted-by":"crossref","first-page":"1458","DOI":"10.1063\/1.1766101","article-title":"Self-Diffusion in Isotopically Enriched Silicon Carbide and Its Correlation with Dopant Diffusion","volume":"96","author":"Bracht","year":"2004","journal-title":"J. Appl. Phys."},{"key":"ref_68","doi-asserted-by":"crossref","first-page":"2073","DOI":"10.1007\/BF00550634","article-title":"Self-Diffusion of Si-30 in Polycrystalline Beta-SiC","volume":"15","author":"Hon","year":"1980","journal-title":"J. Mater. Sci."},{"key":"ref_69","doi-asserted-by":"crossref","first-page":"546","DOI":"10.1111\/j.1151-2916.1980.tb10762.x","article-title":"Self-Diffusion of Carbon-14 in High-Purity and N-Doped Alpha-SiC Single Crystals","volume":"63","author":"Hong","year":"1980","journal-title":"J. Am. Ceram. Soc."},{"key":"ref_70","doi-asserted-by":"crossref","unstructured":"Bathen, M.E., Linnarsson, M., Ghezellou, M., Ul Hassan, J., and Vines, L. (2020). Influence of Carbon Cap on Self-Diffusion in Silicon Carbide. Crystals, 10.","DOI":"10.3390\/cryst10090752"},{"key":"ref_71","doi-asserted-by":"crossref","first-page":"165209","DOI":"10.1103\/PhysRevB.76.165209","article-title":"Theoretical Study of Small Silicon Clusters in 4H-SiC","volume":"76","author":"Hornos","year":"2007","journal-title":"Phys. Rev. B"}],"container-title":["Crystals"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/2073-4352\/11\/2\/167\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T05:21:21Z","timestamp":1760160081000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/2073-4352\/11\/2\/167"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,2,8]]},"references-count":71,"journal-issue":{"issue":"2","published-online":{"date-parts":[[2021,2]]}},"alternative-id":["cryst11020167"],"URL":"https:\/\/doi.org\/10.3390\/cryst11020167","relation":{},"ISSN":["2073-4352"],"issn-type":[{"value":"2073-4352","type":"electronic"}],"subject":[],"published":{"date-parts":[[2021,2,8]]}}}