{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,1]],"date-time":"2026-02-01T05:31:40Z","timestamp":1769923900850,"version":"3.49.0"},"reference-count":79,"publisher":"MDPI AG","issue":"1","license":[{"start":{"date-parts":[[2020,12,29]],"date-time":"2020-12-29T00:00:00Z","timestamp":1609200000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"Funda\u00e7\u00e3o para Ci\u00eancia e Tecnologia","award":["PTDC\/NAN-MAT\/30812\/2017"],"award-info":[{"award-number":["PTDC\/NAN-MAT\/30812\/2017"]}]},{"name":"Funda\u00e7\u00e3o para a Ci\u00eancia e Tecnologia","award":["UIDB\/50025\/2020"],"award-info":[{"award-number":["UIDB\/50025\/2020"]}]},{"name":"Funda\u00e7\u00e3o para a Ci\u00eancia e Tecnologia","award":["SFRH\/BD\/122286\/2016"],"award-info":[{"award-number":["SFRH\/BD\/122286\/2016"]}]},{"name":"European Community\u2019s H2020","award":["No. 716510 (ERC-2016-StG TREND)"],"award-info":[{"award-number":["No. 716510 (ERC-2016-StG TREND)"]}]},{"name":"European Community\u2019s H2020","award":["No. 787410 (ERC-2018-AdG DIGISMART)"],"award-info":[{"award-number":["No. 787410 (ERC-2018-AdG DIGISMART)"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Electronic Materials"],"abstract":"<jats:p>Co-sputtering of SiO2 and high-\u03ba Ta2O5 was used to make multicomponent gate dielectric stacks for In-Ga-Zn-O thin-film transistors (IGZO TFTs) under an overall low thermal budget (T = 150 \u00b0C). Characterization of the multicomponent layers and of the TFTs working characteristics (employing them) was performed in terms of static performance, reliability, and stability to understand the role of the incorporation of the high-\u03ba material in the gate dielectric stack. It is shown that inherent disadvantages of the high-\u03ba material, such as poorer interface properties and poor gate insulation, can be counterbalanced by inclusion of SiO2 both mixed with Ta2O5 and as thin interfacial layers. A stack comprising a (Ta2O5)x(SiO2)100 \u2212 x film with x = 69 and a thin SiO2 film at the interface with IGZO resulted in the best performing TFTs, with field-effect mobility (\u00b5FE) \u2248 16 cm2\u0387V\u22121\u0387s\u22121, subthreshold slope (SS) \u2248 0.15 V\/dec and on\/off ratio exceeding 107. Anomalous Vth shifts were observed during positive gate bias stress (PGBS), followed by very slow recoveries (time constant exceeding 8 \u00d7 105 s), and analysis of the stress and recovery processes for the different gate dielectric stacks showed that the relevant mechanism is not dominated by the interfaces but seems to be related to the migration of charged species in the dielectric. The incorporation of additional SiO2 layers into the gate dielectric stack is shown to effectively counterbalance this anomalous shift. This multilayered gate dielectric stack approach is in line with both the large area and the flexible electronics needs, yielding reliable devices with performance suitable for successful integration on new electronic applications.<\/jats:p>","DOI":"10.3390\/electronicmat2010001","type":"journal-article","created":{"date-parts":[[2020,12,29]],"date-time":"2020-12-29T19:55:25Z","timestamp":1609271725000},"page":"1-16","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":9,"title":["Ta2O5\/SiO2 Multicomponent Dielectrics for Amorphous Oxide TFTs"],"prefix":"10.3390","volume":"2","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-5705-4331","authenticated-orcid":false,"given":"Jorge","family":"Martins","sequence":"first","affiliation":[{"name":"i3N\/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP\/UNINOVA, NOVA University Lisbon, Campus de Caparica, 2829-516 Caparica, Portugal"}]},{"given":"Asal","family":"Kiazadeh","sequence":"additional","affiliation":[{"name":"i3N\/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP\/UNINOVA, NOVA University Lisbon, Campus de Caparica, 2829-516 Caparica, Portugal"}]},{"given":"Joana V.","family":"Pinto","sequence":"additional","affiliation":[{"name":"i3N\/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP\/UNINOVA, NOVA University Lisbon, Campus de Caparica, 2829-516 Caparica, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6240-3743","authenticated-orcid":false,"given":"Ana","family":"Rovisco","sequence":"additional","affiliation":[{"name":"i3N\/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP\/UNINOVA, NOVA University Lisbon, Campus de Caparica, 2829-516 Caparica, Portugal"}]},{"given":"Tiago","family":"Gon\u00e7alves","sequence":"additional","affiliation":[{"name":"i3N\/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP\/UNINOVA, NOVA University Lisbon, Campus de Caparica, 2829-516 Caparica, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2764-3124","authenticated-orcid":false,"given":"Jonas","family":"Deuermeier","sequence":"additional","affiliation":[{"name":"i3N\/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP\/UNINOVA, NOVA University Lisbon, Campus de Caparica, 2829-516 Caparica, Portugal"}]},{"given":"Eduardo","family":"Alves","sequence":"additional","affiliation":[{"name":"IPFN, Instituto Superior T\u00e9cnico, University of Lisbon, EN 10, km 139,7 2695-066 Bobadela, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1997-7669","authenticated-orcid":false,"given":"Rodrigo","family":"Martins","sequence":"additional","affiliation":[{"name":"i3N\/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP\/UNINOVA, NOVA University Lisbon, Campus de Caparica, 2829-516 Caparica, Portugal"}]},{"given":"Elvira","family":"Fortunato","sequence":"additional","affiliation":[{"name":"i3N\/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP\/UNINOVA, NOVA University Lisbon, Campus de Caparica, 2829-516 Caparica, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5446-2759","authenticated-orcid":false,"given":"Pedro","family":"Barquinha","sequence":"additional","affiliation":[{"name":"i3N\/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP\/UNINOVA, NOVA University Lisbon, Campus de Caparica, 2829-516 Caparica, Portugal"}]}],"member":"1968","published-online":{"date-parts":[[2020,12,29]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1007\/s13391-011-0301-x","article-title":"Review paper: Transparent amorphous oxide semiconductor thin film transistor","volume":"7","author":"Kwon","year":"2011","journal-title":"Electron. 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