{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,11]],"date-time":"2026-03-11T16:34:24Z","timestamp":1773246864510,"version":"3.50.1"},"reference-count":24,"publisher":"MDPI AG","issue":"6","license":[{"start":{"date-parts":[[2017,6,21]],"date-time":"2017-06-21T00:00:00Z","timestamp":1498003200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001843","name":"Science and Engineering Research Board","doi-asserted-by":"publisher","award":["ECR\/2017\/000931"],"award-info":[{"award-number":["ECR\/2017\/000931"]}],"id":[{"id":"10.13039\/501100001843","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100010661","name":"Horizon 2020 Framework Programme","doi-asserted-by":"publisher","award":["644631"],"award-info":[{"award-number":["644631"]}],"id":[{"id":"10.13039\/100010661","id-type":"DOI","asserted-by":"publisher"}]},{"name":"COMPETE 2020, FCT","award":["POCI-01-0145-FEDER-007688"],"award-info":[{"award-number":["POCI-01-0145-FEDER-007688"]}]},{"name":"COMPETE 2020, FCT","award":["UID\/CTM\/50025"],"award-info":[{"award-number":["UID\/CTM\/50025"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Materials"],"abstract":"<jats:p>This paper focuses on the analysis of InGaZnO thin-film transistors (TFTs) and circuits under the influence of different temperatures and bias stress, shedding light into their robustness when used in real-world applications. For temperature-dependent measurements, a temperature range of 15 to 85 \u00b0C was considered. In case of bias stress, both gate and drain bias were applied for 60 min. Though isolated transistors show a variation of drain current as high as 56% and 172% during bias voltage and temperature stress, the employed circuits were able to counteract it. Inverters and two-TFT current mirrors following simple circuit topologies showed a gain variation below 8%, while the improved robustness of a cascode current mirror design is proven by showing a gain variation less than 5%. The demonstration that the proper selection of TFT materials and circuit topologies results in robust operation of oxide electronics under different stress conditions and over a reasonable range of temperatures proves that the technology is suitable for applications such as smart food packaging and wearables.<\/jats:p>","DOI":"10.3390\/ma10060680","type":"journal-article","created":{"date-parts":[[2017,6,22]],"date-time":"2017-06-22T02:39:15Z","timestamp":1498099155000},"page":"680","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":29,"title":["Bias Stress and Temperature Impact on InGaZnO TFTs and Circuits"],"prefix":"10.3390","volume":"10","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-5705-4331","authenticated-orcid":false,"given":"Jorge","family":"Martins","sequence":"first","affiliation":[{"name":"CENIMAT\/I3N, Departamento de Ci\u00eancia dos Materiais, Faculdade de Ci\u00eancias e Tecnologia (FCT), Universidade NOVA de Lisboa (UNL) and CEMOP\/UNINOVA, 2829-516 Caparica, Portugal"}]},{"given":"Pydi","family":"Bahubalindruni","sequence":"additional","affiliation":[{"name":"IIIT Delhi, Okhla Industrial Estate, Phase III, New Delhi 110020, India"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6240-3743","authenticated-orcid":false,"given":"Ana","family":"Rovisco","sequence":"additional","affiliation":[{"name":"CENIMAT\/I3N, Departamento de Ci\u00eancia dos Materiais, Faculdade de Ci\u00eancias e Tecnologia (FCT), Universidade NOVA de Lisboa (UNL) and CEMOP\/UNINOVA, 2829-516 Caparica, Portugal"}]},{"given":"Asal","family":"Kiazadeh","sequence":"additional","affiliation":[{"name":"CENIMAT\/I3N, Departamento de Ci\u00eancia dos Materiais, Faculdade de Ci\u00eancias e Tecnologia (FCT), Universidade NOVA de Lisboa (UNL) and CEMOP\/UNINOVA, 2829-516 Caparica, Portugal"}]},{"given":"Rodrigo","family":"Martins","sequence":"additional","affiliation":[{"name":"CENIMAT\/I3N, Departamento de Ci\u00eancia dos Materiais, Faculdade de Ci\u00eancias e Tecnologia (FCT), Universidade NOVA de Lisboa (UNL) and CEMOP\/UNINOVA, 2829-516 Caparica, Portugal"}]},{"given":"Elvira","family":"Fortunato","sequence":"additional","affiliation":[{"name":"CENIMAT\/I3N, Departamento de Ci\u00eancia dos Materiais, Faculdade de Ci\u00eancias e Tecnologia (FCT), Universidade NOVA de Lisboa (UNL) and CEMOP\/UNINOVA, 2829-516 Caparica, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5446-2759","authenticated-orcid":false,"given":"Pedro","family":"Barquinha","sequence":"additional","affiliation":[{"name":"CENIMAT\/I3N, Departamento de Ci\u00eancia dos Materiais, Faculdade de Ci\u00eancias e Tecnologia (FCT), Universidade NOVA de Lisboa (UNL) and CEMOP\/UNINOVA, 2829-516 Caparica, Portugal"}]}],"member":"1968","published-online":{"date-parts":[[2017,6,21]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"488","DOI":"10.1038\/nature03090","article-title":"Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors","volume":"432","author":"Nomura","year":"2004","journal-title":"Nature"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"419","DOI":"10.1109\/LED.2016.2535469","article-title":"InGaZnO Thin-Film-Transistor-Based Four-Quadrant High-Gain Analog Multiplier on Glass","volume":"37","author":"Bahubalindruni","year":"2016","journal-title":"Electron Device Lett."},{"key":"ref_3","doi-asserted-by":"crossref","unstructured":"Ishida, K., Shabanpour, R., Boroujeni, B., Meister, T., Carta, C., Ellinger, F., Petti, L., Munzenrieder, N., Salvatore, G., and Troster, G. 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