{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,10]],"date-time":"2025-12-10T15:56:55Z","timestamp":1765382215208,"version":"build-2065373602"},"reference-count":47,"publisher":"MDPI AG","issue":"1","license":[{"start":{"date-parts":[[2019,12,18]],"date-time":"2019-12-18T00:00:00Z","timestamp":1576627200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100008530","name":"European Regional Development Fund","doi-asserted-by":"publisher","award":["TK141"],"award-info":[{"award-number":["TK141"]}],"id":[{"id":"10.13039\/501100008530","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001871","name":"Funda\u00e7\u00e3o para a Ci\u00eancia e a Tecnologia","doi-asserted-by":"publisher","award":["Reference UID\/CTM\/50025\/2019","FCT\/MCTES"],"award-info":[{"award-number":["Reference UID\/CTM\/50025\/2019","FCT\/MCTES"]}],"id":[{"id":"10.13039\/501100001871","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100003510","name":"Haridus- ja Teadusministeerium","doi-asserted-by":"publisher","award":["IUT 194"],"award-info":[{"award-number":["IUT 194"]}],"id":[{"id":"10.13039\/501100003510","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Materials"],"abstract":"<jats:p>Solution-processed metal oxides require a great deal of thermal budget in order to achieve the desired film properties. Here, we show that the deposition temperature of sprayed zirconium oxide (ZrOx) thin film can be lowered by exposing the film surface to an ultraviolet (UV) ozone treatment at room temperature. Atomic force microscopy reveals a smooth and uniform film with the root mean square roughness reduced from ~ 0.63 nm (UVO-O) to ~ 0.28 nm (UVO-120) in the UV\u2013ozone treated ZrOx films. X-ray photoelectron spectroscopy analysis indicates the formation of a Zr\u2013O network on the surface film, and oxygen vacancy is reduced in the ZrOx lattice by increasing the UV\u2013ozone treatment time. The leakage current density in Al\/ZrOx\/p-Si structure was reduced by three orders of magnitude by increasing the UV-ozone exposure time, while the capacitance was in the range 290\u2013266 nF\/cm2, corresponding to a relative permittivity (k) in the range 5.8\u20136.6 at 1 kHz. An indium gallium zinc oxide (IGZO)-based thin film transistor, employing a UV-treated ZrOx gate dielectric deposited at 200 \u00b0C, exhibits negligible hysteresis, an Ion\/Ioff ratio of 104, a saturation mobility of 8.4 cm2 V\u22121S\u22121, a subthreshold slope of 0.21 V.dec\u22121, and a Von of 0.02 V. These results demonstrate the potentiality of low-temperature sprayed amorphous ZrOx to be applied as a dielectric in flexible and low-power-consumption oxide electronics.<\/jats:p>","DOI":"10.3390\/ma13010006","type":"journal-article","created":{"date-parts":[[2019,12,20]],"date-time":"2019-12-20T09:50:33Z","timestamp":1576835433000},"page":"6","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":13,"title":["Influence of Post-UV\/Ozone Treatment of Ultrasonic-Sprayed Zirconium Oxide Dielectric Films for a Low-Temperature Oxide Thin Film Transistor"],"prefix":"10.3390","volume":"13","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-9377-8791","authenticated-orcid":false,"given":"Abayomi Titilope","family":"Oluwabi","sequence":"first","affiliation":[{"name":"Laboratory of Thin Film Chemical Technologies, Department of Materials and Environmental Technology, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia"}]},{"given":"Diana","family":"Gaspar","sequence":"additional","affiliation":[{"name":"i3N\/CENIMAT, Department of Materials Science School of Science and Technology, FCT-NOVA, Universidade NOVA de Lisboa and CEMOP\/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1980-3391","authenticated-orcid":false,"given":"Atanas","family":"Katerski","sequence":"additional","affiliation":[{"name":"Laboratory of Thin Film Chemical Technologies, Department of Materials and Environmental Technology, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia"}]},{"given":"Arvo","family":"Mere","sequence":"additional","affiliation":[{"name":"Laboratory of Thin Film Chemical Technologies, Department of Materials and Environmental Technology, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia"}]},{"given":"Malle","family":"Krunks","sequence":"additional","affiliation":[{"name":"Laboratory of Thin Film Chemical Technologies, Department of Materials and Environmental Technology, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia"}]},{"given":"Luis","family":"Pereira","sequence":"additional","affiliation":[{"name":"i3N\/CENIMAT, Department of Materials Science School of Science and Technology, FCT-NOVA, Universidade NOVA de Lisboa and CEMOP\/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal"}]},{"given":"Ilona","family":"Oja Acik","sequence":"additional","affiliation":[{"name":"Laboratory of Thin Film Chemical Technologies, Department of Materials and Environmental Technology, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia"}]}],"member":"1968","published-online":{"date-parts":[[2019,12,18]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"021303","DOI":"10.1063\/1.4953034","article-title":"Metal Oxide Semiconductor Thin-film Transistors for Flexible Electronics","volume":"3","author":"Petti","year":"2016","journal-title":"Appl. Phys. Rev."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"113509","DOI":"10.1063\/1.4895782","article-title":"High-performance fully amorphous bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrOx dielectric","volume":"105","author":"Liu","year":"2014","journal-title":"Appl. Phys. Lett."},{"key":"ref_3","doi-asserted-by":"crossref","unstructured":"Avasthi, S., Nagamatsu, K.A., Jhaveri, J., McClain, W.E., Man, G., Kahn, A., Schwartz, J., Wagner, S., and Sturm, J.C. (2014, January 8\u201313). Double-heterojunction Crystalline Silicon Solar Cell Fabricated at 250 \u00b0C with 12.9% Efficiency. Proceedings of the 2014 40th IEEE Photovoltaic Specialist Conference, Denver, CO, USA.","DOI":"10.1109\/PVSC.2014.6925069"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1016\/j.mseb.2007.01.044","article-title":"Metal Oxides for Solid-state Gas Sensors: What Determines Our Choice?","volume":"139","author":"Korotcenkov","year":"2007","journal-title":"Mater. Sci. Eng. B"},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"063002","DOI":"10.1088\/0268-1242\/31\/6\/063002","article-title":"Resistive Switching Memories Based on Metal Oxides: Mechanisms, Reliability and Scaling","volume":"31","author":"Ielmini","year":"2016","journal-title":"Semicond. Sci. Technol."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"254002","DOI":"10.1088\/0957-4484\/22\/25\/254002","article-title":"Nanofilamentary Resistive Switching in Binary Oxide System; a Review on the Present Status and Outlook","volume":"22","author":"Kim","year":"2011","journal-title":"Nanotechnology"},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"242","DOI":"10.1021\/acs.chemmater.5b03991","article-title":"Room-temperature solution-processed n-doped zirconium oxide cathode buffer layer for efficient and stable organic and hybrid perovskite solar cells","volume":"28","author":"Chang","year":"2015","journal-title":"Chem. Mater."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"11358","DOI":"10.1007\/s10854-016-5260-4","article-title":"Optical properties of zirconium oxide thin films for semi-transparent solar cell applications","volume":"27","author":"Yoon","year":"2016","journal-title":"J. Mater. Sci. Mater. Electron."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"759","DOI":"10.1016\/j.ceramint.2015.08.177","article-title":"Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application","volume":"42","author":"Xiao","year":"2016","journal-title":"Ceram. Int."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"19592","DOI":"10.1021\/am503872t","article-title":"Aqueous Combustion Synthesis of Aluminum Oxide Thin Films and Application as Gate Dielectric in GZTO Solution-Based TFTs","volume":"6","author":"Branquinho","year":"2014","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"10715","DOI":"10.1039\/C6TC02607A","article-title":"Low-temperature, nontoxic water-induced high-k zirconium oxide dielectrics for low-voltage, high-performance oxide thin-film transistors","volume":"4","author":"Zhu","year":"2016","journal-title":"J. Mater. Chem. C"},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"410","DOI":"10.1021\/am3022625","article-title":"Low-Temperature, High-Performance Solution-Processed Thin-Film Transistors with Peroxo-Zirconium Oxide Dielectric","volume":"5","author":"Park","year":"2013","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"243501","DOI":"10.1063\/1.3454241","article-title":"Solution-processed zinc\u2013tin oxide thin-film transistors with low interfacial trap density and improved performance","volume":"96","author":"Lee","year":"2010","journal-title":"Appl. Phys. Lett."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"123506","DOI":"10.1063\/1.4795302","article-title":"Photo stability of solution-processed low-voltage high mobility zinc-tin-oxide\/ZrO2 thin-film transistors for transparent display applications","volume":"102","author":"Ha","year":"2013","journal-title":"Appl. Phys. Lett."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"14890","DOI":"10.1039\/C4RA00633J","article-title":"Universal solution-processed high-k amorphous oxide dielectrics for high-performance organic thin film transistors","volume":"4","author":"Zhao","year":"2014","journal-title":"RSC Adv."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"674","DOI":"10.1016\/j.tsf.2005.12.243","article-title":"Structural and electrical characterization of TiO2 films grown by spray pyrolysis","volume":"515","author":"Mere","year":"2006","journal-title":"Thin Solid Film."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"539","DOI":"10.1016\/j.apsusc.2016.06.093","article-title":"Zirconium doped TiO2 thin films deposited by chemical spray pyrolysis","volume":"387","author":"Juma","year":"2016","journal-title":"App. Surf. Sci."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"147","DOI":"10.3176\/proc.2018.2.05","article-title":"Effect of Zr doping on the structural and electrical properties of spray deposited TiO2 thin film","volume":"67","author":"Oluwabi","year":"2018","journal-title":"Proc. Est. Acad. Sci."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"129","DOI":"10.1016\/j.tsf.2018.07.035","article-title":"Structural and electrical characterisation of high-k ZrO2 thin films deposited by chemical spray pyrolysis method","volume":"662","author":"Oluwabi","year":"2018","journal-title":"Thin Solid Film."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"210","DOI":"10.1016\/j.solmat.2015.05.038","article-title":"Influence of annealing treatments on solution-processed ZnO film deposited on ITO substrate as electron transport layer for inverted polymer solar cells","volume":"141","author":"Morvillo","year":"2015","journal-title":"Sol. Energy Mater. Sol. Cells"},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"45","DOI":"10.1038\/nmat2914","article-title":"Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a \u2018sol\u2013gel on chip\u2019 process","volume":"10","author":"Banger","year":"2011","journal-title":"Nat. Mater."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"5808","DOI":"10.1021\/acs.chemmater.5b02505","article-title":"Hexaaqua metal complexes for low-temperature formation of fully metal oxide thin-film transistors","volume":"27","author":"Rim","year":"2015","journal-title":"Chem. Mater."},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"9051","DOI":"10.1021\/am4022818","article-title":"Accelerated formation of metal oxide thin film at 200 C using oxygen supplied by a nitric acid additive and residual organic suction vacuum annealing for thin-film transistor applications","volume":"5","author":"Jeong","year":"2013","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"15205","DOI":"10.1016\/j.ceramint.2017.08.055","article-title":"Room-temperature UV-ozone assisted solution process for zirconium oxide films with high dielectric properties","volume":"43","author":"Donga","year":"2017","journal-title":"Ceram. Int."},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"113514","DOI":"10.1063\/1.4895830","article-title":"Rapid low-temperature processing of metal-oxide thin film transistors with combined far ultraviolet and thermal annealing","volume":"105","author":"Kololuoma","year":"2014","journal-title":"Appl. Phys. Lett."},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"1500427","DOI":"10.1002\/aelm.201500427","article-title":"Solution-processed all-oxide transparent high-performance transistors fabricated by spray-combustion synthesis","volume":"2","author":"Wang","year":"2016","journal-title":"Adv. Electron. Mater."},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"382","DOI":"10.1038\/nmat3011","article-title":"Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing","volume":"10","author":"Kim","year":"2011","journal-title":"Nat. Mater."},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"4494","DOI":"10.1021\/acsami.5b00036","article-title":"Low-temperature, solution-processed ZrO2: B thin film: A bifunctional inorganic\/organic interfacial glue for flexible thin-film transistors","volume":"7","author":"Park","year":"2015","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"128","DOI":"10.1038\/nature11434","article-title":"Flexible metal-oxide devices made by room-temperature photochemical activation of sol-gel films","volume":"489","author":"Kim","year":"2012","journal-title":"Nature"},{"key":"ref_30","doi-asserted-by":"crossref","first-page":"439","DOI":"10.1023\/B:JMSE.0000031598.04081.fd","article-title":"Electrical, optical and structural characterization of high-k dielectric ZrO2 thin films deposited by the pyrosol technique","volume":"15","author":"Falcony","year":"2004","journal-title":"J. Mater. Sci. Mater. Electron."},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"129","DOI":"10.1080\/01919512.2011.649132","article-title":"UV-ozone generation from modified high intensity discharge mercury vapor lamps for treatment of indium tin oxide films","volume":"34","author":"Santos","year":"2012","journal-title":"Ozone Sci. Eng."},{"key":"ref_32","doi-asserted-by":"crossref","first-page":"1800423","DOI":"10.1002\/aelm.201800423","article-title":"Planar Dual-Gate Paper\/Oxide Field Effect Transistors as Universal Logic Gates","volume":"4","author":"Gaspar","year":"2018","journal-title":"Adv. Electron. Mater."},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"34285","DOI":"10.1038\/srep34285","article-title":"Light-Controlled ZrO2 Surface Light-Controlled ZrO2 Surface Hydrophilicity","volume":"6","author":"Rudakova","year":"2016","journal-title":"Sci. Rep."},{"key":"ref_34","doi-asserted-by":"crossref","first-page":"336","DOI":"10.1016\/j.protcy.2016.03.035","article-title":"Investigation of various properties for zirconium oxide films synthesised by sputtering","volume":"23","author":"Patela","year":"2016","journal-title":"Proc. Technol."},{"key":"ref_35","doi-asserted-by":"crossref","first-page":"7736","DOI":"10.1021\/jp401559y","article-title":"Controlled Wetting on Electrodeposited Oxide Thin Films: From Hydrophilic to Superhydrophobic","volume":"117","author":"Hao","year":"2013","journal-title":"J. Phys. Chem. C"},{"key":"ref_36","doi-asserted-by":"crossref","first-page":"521","DOI":"10.1016\/j.apsusc.2017.02.065","article-title":"Surface properties of sprayed and electrodeposited ZnO rod layers","volume":"405","author":"Gromyko","year":"2017","journal-title":"Appl. Surf. Sci."},{"key":"ref_37","doi-asserted-by":"crossref","first-page":"3919","DOI":"10.1016\/j.jnoncrysol.2008.05.029","article-title":"Structure and optical characterization of photochemically prepared ZrO2 thin films doped with erbium and europium","volume":"354","author":"Cabillo","year":"2008","journal-title":"J. Non-Cryst. Solids"},{"key":"ref_38","doi-asserted-by":"crossref","first-page":"126","DOI":"10.1016\/S0169-4332(02)00965-0","article-title":"Interfacial and microstructural properties of zirconium oxide thin films prepared directly on silicon","volume":"202","author":"Zhang","year":"2002","journal-title":"Appl. Surf. Sci."},{"key":"ref_39","doi-asserted-by":"crossref","first-page":"184509","DOI":"10.1063\/1.4804667","article-title":"Impact of UV\/O3 treatment on solution-processed amorphous InGaZnO4 thin-film","volume":"113","author":"Umeda","year":"2013","journal-title":"J. Appl. Phys."},{"key":"ref_40","doi-asserted-by":"crossref","first-page":"2729","DOI":"10.5012\/bkcs.2009.30.11.2729","article-title":"Physical and Chemical Investigation of Substrate Temperature Dependence of Zirconium Oxide Films on Si (100)","volume":"30","author":"Chun","year":"2009","journal-title":"Bull. Korean Chem. Soc."},{"key":"ref_41","doi-asserted-by":"crossref","first-page":"40300","DOI":"10.1021\/acsami.9b14310","article-title":"Amorphous IGZO TFT with High Mobility of ~70 cm2\/(Vs) via Vertical Dimension Control Using PEALD","volume":"11","author":"Jiazhen","year":"2019","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_42","doi-asserted-by":"crossref","first-page":"17201","DOI":"10.1021\/acsami.7b01629","article-title":"Investigation of the changes in electronic properties of Nickel oxide due to UV\/ozone treatment","volume":"9","author":"Islam","year":"2017","journal-title":"Appl. Mater. Interfaces"},{"key":"ref_43","doi-asserted-by":"crossref","first-page":"373","DOI":"10.1016\/j.apsusc.2016.02.176","article-title":"Low temperature solution processed high-ZrO2 gate dielectrics fornanoelectonics","volume":"370","author":"Kumar","year":"2016","journal-title":"Appl. Surf. Sci."},{"key":"ref_44","doi-asserted-by":"crossref","first-page":"2874","DOI":"10.1063\/1.1569985","article-title":"Atomic layer deposition of ZrO2 on W for metal-insulator-metal capacitor application","volume":"82","author":"Lee","year":"2003","journal-title":"Appl. Phys. Lett."},{"key":"ref_45","first-page":"578168","article-title":"A Review on Conduction Mechanisms in Dielectric Films","volume":"2014","year":"2014","journal-title":"Adv. Mater. Sci. Eng."},{"key":"ref_46","doi-asserted-by":"crossref","first-page":"31100","DOI":"10.1021\/acsami.6b06321","article-title":"UV-mediated photochemical treatment for low-temperature oxide based thin film transistor","volume":"45","author":"Carlos","year":"2016","journal-title":"Appl. Mater. Interfaces"},{"key":"ref_47","doi-asserted-by":"crossref","first-page":"479","DOI":"10.1186\/1556-276X-9-479","article-title":"Effect of uv\/ozone treatment on polystyrene dielectric and its application on organic field-effect transistors","volume":"9","author":"Huang","year":"2014","journal-title":"Nanoscale Res. Lett."}],"container-title":["Materials"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1996-1944\/13\/1\/6\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T13:43:21Z","timestamp":1760190201000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1996-1944\/13\/1\/6"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,12,18]]},"references-count":47,"journal-issue":{"issue":"1","published-online":{"date-parts":[[2020,1]]}},"alternative-id":["ma13010006"],"URL":"https:\/\/doi.org\/10.3390\/ma13010006","relation":{},"ISSN":["1996-1944"],"issn-type":[{"type":"electronic","value":"1996-1944"}],"subject":[],"published":{"date-parts":[[2019,12,18]]}}}