{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,23]],"date-time":"2026-03-23T12:04:30Z","timestamp":1774267470817,"version":"3.50.1"},"reference-count":32,"publisher":"MDPI AG","issue":"3","license":[{"start":{"date-parts":[[2022,1,23]],"date-time":"2022-01-23T00:00:00Z","timestamp":1642896000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001871","name":"Funda\u00e7\u00e3o para a Ci\u00eancia e Tecnologia","doi-asserted-by":"publisher","award":["UIDB\/50011\/2020, UIDP\/50011\/2020, UIDB\/00481\/2020, UIDP\/00481\/2020"],"award-info":[{"award-number":["UIDB\/50011\/2020, UIDP\/50011\/2020, UIDB\/00481\/2020, UIDP\/00481\/2020"]}],"id":[{"id":"10.13039\/501100001871","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100008530","name":"European Regional Development Fund","doi-asserted-by":"publisher","award":["CENTRO-01-0145-FEDER-022083"],"award-info":[{"award-number":["CENTRO-01-0145-FEDER-022083"]}],"id":[{"id":"10.13039\/501100008530","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Materials"],"abstract":"<jats:p>The voltage dependence of the dielectric permittivity \u03b5\u2032 and the low dielectric loss tan\u03b4 of incipient ferroelectrics have drawn vast attention to the use of these materials for the development of tuning elements in electronics and telecommunications. Here, we study the DC electric field dependence of low-temperature \u03b5\u2032 in ~320 nm thick sol-gel-derived SrTi1\u2212xZnxO3\u2212\u03b4 thin films with x = 0.01 and 0.05, deposited on Pt\/TiO2\/SiO2\/Si substrates. Incorporation of Zn onto Ti sites is found to decrease \u03b5\u2032 compared to undoped SrTiO3 films, while increasing the relative tunability nr up to ~32.9% under a DC electric field of 125 kV\/cm at low temperatures. The hysteresis-free variation in \u03b5\u2032 with electric field and tan\u03b4 values below 0.6% observed for SrTi1\u2212xZnxO3\u2212\u03b4 film with x = 0.01 make this compound more attractive for tunable device applications.<\/jats:p>","DOI":"10.3390\/ma15030859","type":"journal-article","created":{"date-parts":[[2022,1,23]],"date-time":"2022-01-23T20:34:40Z","timestamp":1642970080000},"page":"859","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["Low-Temperature Dielectric Response of Strontium Titanate Thin Films Manipulated by Zn Doping"],"prefix":"10.3390","volume":"15","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-0885-7127","authenticated-orcid":false,"given":"Olena","family":"Okhay","sequence":"first","affiliation":[{"name":"TEMA-Centre for Mechanical Technology and Automation, Department of Mechanical Engineering, University of Aveiro, 3810-193 Aveiro, Portugal"}]},{"given":"Paula M.","family":"Vilarinho","sequence":"additional","affiliation":[{"name":"Department of Materials and Ceramic Engineering, CICECO\u2014Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0318-9262","authenticated-orcid":false,"given":"Alexander","family":"Tkach","sequence":"additional","affiliation":[{"name":"Department of Materials and Ceramic Engineering, CICECO\u2014Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro, Portugal"}]}],"member":"1968","published-online":{"date-parts":[[2022,1,23]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"215","DOI":"10.1080\/10584589908215593","article-title":"A Comprehensive Review of Microwave System Requirements on Thin-Film Ferroelectrics","volume":"24","author":"Korn","year":"1999","journal-title":"Integr. 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