{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,13]],"date-time":"2026-02-13T08:54:04Z","timestamp":1770972844726,"version":"3.50.1"},"reference-count":82,"publisher":"MDPI AG","issue":"4","license":[{"start":{"date-parts":[[2024,2,7]],"date-time":"2024-02-07T00:00:00Z","timestamp":1707264000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"FEDER","award":["CEMMPRE\u2014UIDB\/00285\/2020"],"award-info":[{"award-number":["CEMMPRE\u2014UIDB\/00285\/2020"]}]},{"name":"FEDER","award":["ARISE\u2014LA\/P\/0112\/2020"],"award-info":[{"award-number":["ARISE\u2014LA\/P\/0112\/2020"]}]},{"name":"FCT (Funda\u00e7\u00e3o para a Ci\u00eancia e a Tecnologia)","award":["CEMMPRE\u2014UIDB\/00285\/2020"],"award-info":[{"award-number":["CEMMPRE\u2014UIDB\/00285\/2020"]}]},{"name":"FCT (Funda\u00e7\u00e3o para a Ci\u00eancia e a Tecnologia)","award":["ARISE\u2014LA\/P\/0112\/2020"],"award-info":[{"award-number":["ARISE\u2014LA\/P\/0112\/2020"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Materials"],"abstract":"<jats:p>Two-dimensional (2D) nanostructures of aluminum nitride (AlN) and gallium nitride (GaN), called nanosheets, have a graphene-like atomic arrangement and represent novel materials with important upcoming applications in the fields of flexible electronics, optoelectronics, and strain engineering, among others. Knowledge of their mechanical behavior is key to the correct design and enhanced functioning of advanced 2D devices and systems based on aluminum nitride and gallium nitride nanosheets. With this background, the surface Young\u2019s and shear moduli of AlN and GaN nanosheets over a wide range of aspect ratios were assessed using the nanoscale continuum model (NCM), also known as the molecular structural mechanics (MSM) approach. The NCM\/MSM approach uses elastic beam elements to represent interatomic bonds and allows the elastic moduli of nanosheets to be evaluated in a simple way. The surface Young\u2019s and shear moduli calculated in the current study contribute to building a reference for the evaluation of the elastic moduli of AlN and GaN nanosheets using the theoretical method. The results show that an analytical methodology can be used to assess the Young\u2019s and shear moduli of aluminum nitride and gallium nitride nanosheets without the need for numerical simulation. An exploratory study was performed to adjust the input parameters of the numerical simulation, which led to good agreement with the results of elastic moduli available in the literature. The limitations of this method are also discussed.<\/jats:p>","DOI":"10.3390\/ma17040799","type":"journal-article","created":{"date-parts":[[2024,2,7]],"date-time":"2024-02-07T08:28:16Z","timestamp":1707294496000},"page":"799","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":4,"title":["Numerical Evaluation of the Elastic Moduli of AlN and GaN Nanosheets"],"prefix":"10.3390","volume":"17","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-1922-4365","authenticated-orcid":false,"given":"Nataliya A.","family":"Sakharova","sequence":"first","affiliation":[{"name":"Centre for Mechanical Engineering, Materials and Processes (CEMMPRE)\u2014Advanced Production and Intelligent Systems, Associated Laboratory (ARISE), Department of Mechanical Engineering, University of Coimbra, Rua Lu\u00eds Reis Santos, Pinhal de Marrocos, 3030-788 Coimbra, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1581-2197","authenticated-orcid":false,"given":"Jorge M.","family":"Antunes","sequence":"additional","affiliation":[{"name":"Centre for Mechanical Engineering, Materials and Processes (CEMMPRE)\u2014Advanced Production and Intelligent Systems, Associated Laboratory (ARISE), Department of Mechanical Engineering, University of Coimbra, Rua Lu\u00eds Reis Santos, Pinhal de Marrocos, 3030-788 Coimbra, Portugal"},{"name":"Abrantes High School of Technology, Polytechnic Institute of Tomar, Quinta do Contador, Estrada da Serra, 2300-313 Tomar, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0443-4925","authenticated-orcid":false,"given":"Andr\u00e9 F. G.","family":"Pereira","sequence":"additional","affiliation":[{"name":"Centre for Mechanical Engineering, Materials and Processes (CEMMPRE)\u2014Advanced Production and Intelligent Systems, Associated Laboratory (ARISE), Department of Mechanical Engineering, University of Coimbra, Rua Lu\u00eds Reis Santos, Pinhal de Marrocos, 3030-788 Coimbra, Portugal"}]},{"given":"Bruno M.","family":"Chaparro","sequence":"additional","affiliation":[{"name":"Abrantes High School of Technology, Polytechnic Institute of Tomar, Quinta do Contador, Estrada da Serra, 2300-313 Tomar, Portugal"}]},{"given":"Tom\u00e1s G.","family":"Parreira","sequence":"additional","affiliation":[{"name":"Centre for Mechanical Engineering, Materials and Processes (CEMMPRE)\u2014Advanced Production and Intelligent Systems, Associated Laboratory (ARISE), Department of Mechanical Engineering, University of Coimbra, Rua Lu\u00eds Reis Santos, Pinhal de Marrocos, 3030-788 Coimbra, Portugal"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3692-585X","authenticated-orcid":false,"given":"Jos\u00e9 V.","family":"Fernandes","sequence":"additional","affiliation":[{"name":"Centre for Mechanical Engineering, Materials and Processes (CEMMPRE)\u2014Advanced Production and Intelligent Systems, Associated Laboratory (ARISE), Department of Mechanical Engineering, University of Coimbra, Rua Lu\u00eds Reis Santos, Pinhal de Marrocos, 3030-788 Coimbra, Portugal"}]}],"member":"1968","published-online":{"date-parts":[[2024,2,7]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"17201","DOI":"10.1039\/D1TC04022G","article-title":"Two-dimensional wide band-gap nitride semiconductor GaN and AlN materials: Properties, fabrication and applications","volume":"9","author":"Wang","year":"2021","journal-title":"J. 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